• ETRI Journal
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• 제27권5호
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• 한국정보과학회 언어공학연구회:학술대회논문집(한글 및 한국어 정보처리)
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• 한국정보과학회언어공학연구회 2017년도 제29회 한글 및 한국어 정보처리 학술대회
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• pp.35-40
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• 2017

기계 독해(Machine reading comprehension)는 주어진 문맥을 이해하고, 질문에 적합한 답을 문맥 내에서 찾는 문제이다. Simple Recurrent Unit (SRU)은 Gated Recurrent Unit (GRU)등과 같이 neural gate를 이용하여 Recurrent Neural Network (RNN)에서 발생하는 vanishing gradient problem을 해결하고, gate 입력에서 이전 hidden state를 제거하여 GRU보다 속도를 향상시킨 모델이며, Self-matching Network는 R-Net 모델에서 사용된 것으로, 자기 자신의 RNN sequence에 대하여 어텐션 가중치 (attention weight)를 계산하여 비슷한 의미 문맥 정보를 볼 수 있기 때문에 상호참조해결과 유사한 효과를 볼 수 있다. 본 논문에서는 한국어 기계 독해 데이터 셋을 구축하고, 여러 층의 SRU를 이용한 Encoder에 Self-matching layer를 추가한 $S^2$-Net 모델을 제안한다. 실험 결과, 본 논문에서 제안한 $S^2$-Net 모델이 한국어 기계 독해 데이터 셋에서 EM 65.84%, F1 78.98%의 성능을 보였다.

• 한국어정보학회:학술대회논문집
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• 한국어정보학회 2017년도 제29회 한글및한국어정보처리학술대회
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• pp.35-40
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• 2017

기계 독해(Machine reading comprehension)는 주어진 문맥을 이해하고, 질문에 적합한 답을 문맥 내에서 찾는 문제이다. Simple Recurrent Unit (SRU)은 Gated Recurrent Unit (GRU)등과 같이 neural gate를 이용하여 Recurrent Neural Network (RNN)에서 발생하는 vanishing gradient problem을 해결하고, gate 입력에서 이전 hidden state를 제거하여 GRU보다 속도를 향상시킨 모델이며, Self-matching Network는 R-Net 모델에서 사용된 것으로, 자기 자신의 RNN sequence에 대하여 어텐션 가중치 (attention weight)를 계산하여 비슷한 의미 문맥 정보를 볼 수 있기 때문에 상호참조해결과 유사한 효과를 볼 수 있다. 본 논문에서는 한국어 기계 독해 데이터 셋을 구축하고, 여러 층의 SRU를 이용한 Encoder에 Self-matching layer를 추가한 $S^2$-Net 모델을 제안한다. 실험 결과, 본 논문에서 제안한 $S^2$-Net 모델이 한국어 기계 독해 데이터 셋에서 EM 65.84%, F1 78.98%의 성능을 보였다.

• ETRI Journal
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• 제33권4호
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• pp.537-546
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• 2011

This paper introduces an automated method for building height recovery through the integration of high-resolution satellite images and digital vector maps. A cross-correlation matching method along the vertical line locus on the Ikonos images was deployed to recover building heights. The rational function models composed of rational polynomial coefficients were utilized to create a stereopair of the epipolar resampled Ikonos images. Building footprints from the digital maps were used for locating the vertical guideline along the building edges. The digital terrain model (DTM) was generated from the contour layer in the digital maps. The terrain height derived from the DTM at each foot of the buildings was used as the starting location for image matching. At a preset incremental value of height along the vertical guidelines derived from vertical line loci, an evaluation process that is based on the cross-correlation matching of the images was carried out to test if the top of the building has reached where maximum correlation occurs. The accuracy of the reconstructed buildings was evaluated by the comparison with manually digitized 3D building data derived from aerial photographs.

• 전자공학회논문지D
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• 제34D권8호
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• pp.80-86
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• 1997

H:LiNbO$_{3}$ optical modulator buffered by parylene layer, which has a merits in the bandwidth, power consumption and fabrication as compared with conventional SiO$_{2}$ buffered optical modulator, is proposed and analyzed. The dependences of velocity matching condition, charcteristics impedance, and driving voltage on dielectric constants, thickness of buffer layer, and electrode configurations are demonstrated with finite element calculation. And we performed the physical and chemical test of parylene buffer layer deposited on LiNbO$_{3}$ and under Au electrodes.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.352-356
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• 1995

Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

• 전기학회논문지
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• 제60권2호
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• pp.431-434
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• 2011

In this paper, bandwidth enhanced design of dielectric resonator antenna fabricated in multi-layer substrate is introduced. The proposed dielectric resonator antenna is operating with fundamental TE101 mode and higher-order TM111 mode. Each resonance frequency is dependent on resonator dimensions. As increasing the height of radiating aperture, the higher-order TM111 mode resonance frequency approach the fundamental TE101 mode resonance frequency and the antenna bandwidth increase by double resonance. Three different aperture height size antennas that operated at 7GHz are fabricated in FR4 multi-layer substrate. Measured 10 dB matching bandwidth is 8 percent for single resonace antenna and 18 percent for double resonance antenna.

• 한국인터넷방송통신학회논문지
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• 제16권4호
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• pp.153-158
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• 2016

본 논문에서는 접지된 2중 유전체층 사이의 완전도체띠 격자구조에 의한 TE(transverse electric) 산란문제를 전자파 수치해석 방법으로 알려진 PMM(point matching method)을 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고 산란 전자계는 Floquet 모드 함수의 급수로 전개하였으며, 도체띠의 해석을 위해 완전도체 경계조건을 적용하였다. 완전도체띠의 폭과 주기, 접지된 2중 유전체층의 비유전율과 두께 및 입사각에 대해 정규화 된 반사전력을 계산하였다. 최소값을 가지는 변곡점들의 대부분의 반사전력은 입사각 이외의 다른 방향으로 산란된다. 접지된 2중 유전체층을 가지는 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.357-361
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• 2006

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.70-71
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• 2005

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.