• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1997년도 추계학술대회 논문집
• /
• pp.887-890
• /
• 1997

Recently micromachining using DPSSL(Diode Pumped Solid State Laser) with 3rd harmonic wavelength is actively studied in laser machining area. Micromachining using DPSSL have outstanding advantages as UV source comparing with excimer laser in various aspect such a maintenance cost, maskless machining, high repetition rate and so on. In this study micro-drilling of PCB type substrate which consists of Cu-PI-Cu layer was performed using DPSS Nd:YAG laser(355nm, wavelength) in vector scanning method. Experimental and numerical method(Matlab simulation, FEM) are used to optimize process parameter and control machining depth. The man mechanism of this process is laser ablation. It is known that there is large gap between energy threshold of copper and that of PI. Matlab simulation considering energy threshold of material is performed to effect of duplication of pulse and FEM thermal analysis is used to predict the ablation depth of copper. This study could be widely used in various laser micromachining including via hole microdrilling of PCB, and micromachining of semiconductor components, medical parts and printer nozzle and so on.

• 소성∙가공
• /
• 제12권7호
• /
• pp.640-646
• /
• 2003

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권5호
• /
• pp.396-401
• /
• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• 센서학회지
• /
• 제29권4호
• /
• pp.255-260
• /
• 2020

In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 ㎛. The SERS response characteristics were measured by depositing approximately 1.5 ㎛ of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.

• 한국레이저가공학회:학술대회논문집
• /
• 한국레이저가공학회 2005년도 추계학술발표대회 논문집
• /
• pp.37-41
• /
• 2005

When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 춘계학술대회 논문집
• /
• pp.1507-1510
• /
• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• 한국정밀공학회지
• /
• 제23권8호
• /
• pp.171-177
• /
• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• 센서학회지
• /
• 제30권4호
• /
• pp.267-272
• /
• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.

• 한국광학회지
• /
• 제14권3호
• /
• pp.312-320
• /
• 2003

본 연구에서는 355 nm의 파장을 갖는 Nd:YVO$_4$ 3고주파 DPSS 레이저를 이용하여 폴리머의 3차원 미세형상 가공기술을 개발하였다. UV레이저와 폴리머의 어블레이션에 관한 메커니즘을 설명하였으며 비교적 UV영역에서 파장이 긴 355 nm파장의 영역에서는 광열분해 반응으로 가공되고 이에 따른 폴리머의 광학적 특성을 살펴보았다. 광 흡수율 특성이 우수한 폴리머가 광가공 특성이 좋은 것으로 나타났으나 벤젠구조가 많이 포함되어 있는 폴리이미드의 경우는 광분해후 다시 새로운 화학적 결합이 이루어져 가공부 면이 좋지 않은 면을 보였다. 레이저의 다중 주사방식으로 가공하기위하여 표면의 오염이 적은 폴리카보네이트를 시편으로 사용하여 3차원 적으로 모델링한 직경 1 mm와 500 $\mu\textrm{m}$의 마이크로 팬을 가공하였다. 레이저 발진 효율이 높고 유지비가 적은 355 nm의 DPSSL을 이용한 3차원 가공기술의 개발로 향후 저비용으로 빠른 시간에 미세부품을 개발하는 기술에 기여할 것으로 예상된다.