• Title/Summary/Keyword: Mask material

Search Result 263, Processing Time 0.031 seconds

A study on the Characteristic of Mask Sheets (마스크 팩 시트의 특성 연구)

  • Jang, Hye-In
    • Journal of the Korean Applied Science and Technology
    • /
    • v.34 no.4
    • /
    • pp.787-798
    • /
    • 2017
  • This is a study on characteristics according to the material of sheet-type mask packs being sold on the market. The absorption capacities of water soluble components such as purified water, 1.3-propanediol, 1.3-butylene glycol, glycerine, and hyaluronic acid are compared with that of various oils including cyclomethicone, dimethicone, phytosqualane, caprylic capryl triglyceride, grape seed oil, and macadamia nut oil. As a result, all of the water soluble components except purified water showed higher moisture absorption capacity as the viscosity increased. And in case of oil, all oil showed higher oil absorption capacity according to the viscosity. During this test, the mask sheets with the type of acetic acid fermented bio-cellulose showed 500~1,000 times or more absorption capacity on water soluble wetting agent or all oils, which is due to the fine mesh structure seen in the 5,000x enlarged photograph at surface structure. This mesh structure was well recognized on the cross section and these structural features enhance the absorption capacity of water and oil. It is also believed that largely contained water-soluble components and oils facilitate the discharge over time. In addition, since each mask sheet shows their characteristics according to their material, it is intended to be a basic research for manufacturing mask packs good for skin.

New Material Architecture and Its Process Integration for a-Si TFT Array Manufacturing

  • Song, Jean-Ho;Park, Hong-Sick;Kim, Sang-Gab;Cho, Hong-Je;Jeong, Chang-Oh;Kang, Sung-Chul;Kim, Chi-Woo;Chung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2002.08a
    • /
    • pp.552-555
    • /
    • 2002
  • In order to achieve higher performance and low cost a-Si TFT-LCD panel, new material architecture and its process integration for a-Si TFT array manufacturing method were developed. Material combination of low resistant dry-etchable metal and new pixel electrode under currently adopted 4 mask process made it possible to get more-simplified manufacturing method and better device performance for the a-Si TFT-LCD application. Proposed 4 mask process architecture with optimized wet etchants and dry etching process was applicable to various devices such as notebook, monitor and TV.

  • PDF

Investigation of nuclear material using a compact modified uniformly redundant array gamma camera

  • Lee, Taewoong;Kwak, Sung-Woo;Lee, Wonho
    • Nuclear Engineering and Technology
    • /
    • v.50 no.6
    • /
    • pp.923-928
    • /
    • 2018
  • We developed a compact gamma camera based on a modified uniformly redundant array coded aperture to investigate the position of a $UO_2$ pellet emitting characteristic X-rays (98.4 keV) and ${\gamma}-rays$ (185.7 keV). Experiments using an only-mask method and an antimask subtractive method were conducted, and the maximum-likelihood expectation maximization algorithm was used for image reconstruction. The images obtained via the antimask subtractive method were compared with those obtained using the only-mask method with regard to the signal-to-noise ratio. The reconstructed images of the antimask subtractive method were superior. The reconstructed images of the characteristic X-rays and the ${\gamma}-rays$ were combined with the obtained image using the optical camera. The combined images showed the precise position of the $UO_2$ pellet. According to the self-absorption ratios of the nuclear material and the minimum number of effective events for image reconstruction, we estimated the minimum detection time depending on the amount of nuclear material.

Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films (가스 센서용 ZnO, SnO2 박막의 이방성 식각을 위한 mask 재료의 식각 선택도 조사)

  • Park, Jong-Cheon;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.21 no.4
    • /
    • pp.164-168
    • /
    • 2011
  • Etch selectivities of mask materials to ZnO and $SnO_2$ films were studied in $BCl_3$/Ar and $CF_4$/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In $25BCl_3$/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 ~ 17 for ZnO over Ni were produced in $25CF_4$/10Ar mixtures. $SnO_2$ showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for $SnO_2$ over Ni.

Fabrication of Nanoporous Alumina Mask and its Applications (나노다공성 알루미나 마스크의 제조 및 응용)

  • Jung, Mi;Choi, Jeong-Woo;Kim, Young-Kee;Oh, Byung-Ken
    • Korean Chemical Engineering Research
    • /
    • v.46 no.3
    • /
    • pp.465-472
    • /
    • 2008
  • Fabrication of nanostructured materials and synthesis of nanomaterials have intensively studied to realize electronic devices for nanotechnology. By using nanoporous alumina mask, nanostructured material can be fabricated in the form of uniform array. The size and the density of the nanostructured materials can be controllable by changing the pore diameter and the density of the alumina mask. This method is possible low cost and on large scale process, and feasible to contribute the fusion technology consisting of information technology, nanotechnology, and biotechnology. Therefore, these techniques provide alternative approaches for development of new electronic applications. In this paper, the fabrication technique and its applications of nanoporous alumina mask are described and nanostructured materials such as quantum dots, nanoholes, and nanorods are introduced.

The formation of Si V-groove for optical fiber alignment in optoelectronic devices (광전소자 패키징에서 광섬유 정렬을 위한 Si V-groove 형성)

  • 유영석;김영호
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.6 no.3
    • /
    • pp.65-71
    • /
    • 1999
  • The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide($SiO_2$) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at $85^{\circ}C$ among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037 $\mu\textrm{m}$/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.

  • PDF

The Skin Improvement Effect of Facial mask pack using Chickpea natto fermented with Bacillus subtilis natto (Bacillus subtilis natto 균주로 발효한 병아리콩 낫토를 이용한 mask pack의 피부 개선 효과)

  • Um, Mi Sun;Ryu, Hee Wook
    • Journal of the Korean Applied Science and Technology
    • /
    • v.35 no.1
    • /
    • pp.62-69
    • /
    • 2018
  • In order to utilize health food chick bean as a raw material for cosmetics, the skin improvement effect of a mask pack made of chickpea Natto fermented with Bacillus subtilis Natto strain was studied. Powder obtained by lyophilization of chickpea Natto was applied to a facial mask pack as a paste formulation. This Natto pack was applied to subjects in their 50s and 60s to investigate their effect on skin improvement. As the number of treatments of Natto pack increased, the skin was improved and the improvement effect was remarkable after 4 treatments. After four times treatments, moisture content and sebaceous secretion increased by $8.4{\pm}3.6%p$ and $4.0{\pm}2.3%p$, respectively. Skin pores and wrinkles were also decreased by $1.8{\pm}0.3%p$ and $1.8{\pm}0.9%p$, respectively. Skin pigmentation decreased by $1.3{\pm}0.2%p$ and skin tone also increased from 55.2% to 55.9%. These results indicate that Natto product obtained by fermenting chickpea has the effect of improving skin such as moisturizing, pore, wrinkle, pigmentation, sebum secretion and skin tone, and can be used as a raw material for various functional cosmetics.

Albedo Based Fake Face Detection (빛의 반사량 측정을 통한 가면 착용 위변조 얼굴 검출)

  • Kim, Young-Shin;Na, Jae-Keun;Yoon, Sung-Beak;Yi, June-Ho
    • Journal of the Institute of Electronics Engineers of Korea CI
    • /
    • v.45 no.6
    • /
    • pp.139-146
    • /
    • 2008
  • Masked fake face detection using ordinary visible images is a formidable task when the mask is accurately made with special makeup. Considering recent advances in special makeup technology, a reliable solution to detect masked fake faces is essential to the development of a complete face recognition system. This research proposes a method for masked fake face detection that exploits reflectance disparity due to object material and its surface color. First, we have shown that measuring of albedo can be simplified to radiance measurement when a practical face recognition system is deployed under the user-cooperative environment. This enables us to obtain albedo just by grey values in the image captured. Second, we have found that 850nm infrared light is effective to discriminate between facial skin and mask material using reflectance disparity. On the other hand, 650nm visible light is known to be suitable for distinguishing different facial skin colors between ethnic groups. We use a 2D vector consisting of radiance measurements under 850nm and 659nm illumination as a feature vector. Facial skin and mask material show linearly separable distributions in the feature space. By employing FIB, we have achieved 97.8% accuracy in fake face detection. Our method is applicable to faces of different skin colors, and can be easily implemented into commercial face recognition systems.

Selective Etching of Magnetic Layer Using CO/$NH_3$ in an ICP Etching System

  • Park, J.Y.;Kang, S.K.;Jeon, M.H.;Yeom, G.Y.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.448-448
    • /
    • 2010
  • Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

  • PDF