• 대한가정학회지
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• 제11권2호
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• pp.166-188
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• 1973

This thesis chiefly to investigate and study about the historic transition of the dress and ornament which is based on the costume of the folk dance. The folk dance is devide into the styled of the Court and common people I. Investigated and studied on the description of Hak-mu (the crane), Ryun-wha-dae (the lotus blossom) and chu-yong dance (a mask drama) which are the typical models among the folk dance on the view of the scale and history of playing. This research materials are made on abstract of Ak-Hak-Gyae-Bum (the pattern of the music which was compiled by Sung-hyun on the King of Sung-Jong of Yi-dynasdty) and selected from the conservation material and playing in the National Classical Music Bureau nowadays. I am sure the understanding the style of common people is to investigate and research the folk dance which is specified and conserved by cultural property control Bureau. Generally Bong-San mask dance is the typical mask drama on the view of the scale and transmitted, which occupies the wide range of the folk dance. So I selected it as the research material. I am interested in the historic origin and the structure of the dress and ormant conserved till the nowadays and so can catch the hidden conception about the colour and concern of religion in the Korean peculiar living consciousness. From this point, the study of the classical folk costume is activated in this part and I hope this poor article will become a small assistance for another study.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(4)
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• pp.223-226
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• 2000

In this paper, we report detects system algorithm, adapted a perimetric mask and a generalized symmetry system, to detect a transformable material and find out a minute error cannot be noticed by a naked eye. In this thesis, supposed a stable detecting system applied a general image processing theory and perimetric mash algorithm to detect badness. And finally, detected some vague errors with the application of symmetry transform algorithm that accumulate a symmetry of minute error and put stress on it.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.133-136
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• 2002

It is very important to get a stable and large-capacity organic effusion source for achievement of OLED mass-production equipment. We present an organic effusion source with film uniformity less than ${\pm}$ 5%, the material charge volume, 300cc for $400{\times}400\;mm^2$ substrate. The fine metal shadow mask alignment technology, one of the color forming technique, also have to support more accurate and fast operating in mass-production. In this paper, we will describe the OLED mass-production equipment with the large volume effusion source and the precision shadow mask alignment technique.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.560-563
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• 2004

Invar is a compound metal of Fe-Ni system and contain 36％ Ni. The most distinction characteristic of Invar is the coefficient of thermal expansion is 1.0 10$^{-6}$ /$^{\circ}C$. That is a tenth of general steel material. This low thermal expansion characteristic of Invar is applied to the missile, aircraft, monitor CRT and frontier display's shadow mask such as FED and OLED. The usage of the Invar shadow mask for display is increasing due to the requirement of larger size and flatness monitor. The Invar shadow mask is machined by two ways electro-forming and laser now. However the electro-forming takes a too long time and the laser machining is accompanied with Burr. In this study, PEMM(pulse electrochemical micro machining) is conducted to machine the micro hole to the Invar and 80${\mu}{\textrm}{m}$ hole was machined.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.

• Journal of Information Display
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• 제6권4호
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• pp.40-44
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• 2005

Nanometer-sized bismuth oxide with a diameter of about 80 nm was used as a new electron reflection material in a 29" Real Flat CPT. This bismuth oxide was well dispersed over pH8 in slurry. Spray coating was performed clearly and uniformly and was ensured that there was no clogging of shadow mask hole. Coating thickness was expressed to the brightness of chromaticity for the sprayed layer and was also well controlled during the spraying process. Doming was improved by about 10% in spite of the similar coating weight in comparison with the average 3.5 ${\mu}m$ of the conventional bismuth oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1053-1055
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• 2002

Recently CRT is getting large-sized, Flatness and High Fine Pitched in the meantime the raw material for shadow mask is in rapid progress of thinness, Low Thermal Expansion and high strength.Until now we have used AK(Aluminum Killed) & Invar(Fe-Ni alloy) materials for main raw material of shadow mask component. However recently Nb and Co addition and Nb+Co addition, which has advantage of Low Thermal Expansion and High Strength. has been developed as well as applying in mass production as CRT's trend has become more flat and fine pitch. Among of them, Co addition has been mass production as forming type (Flat CRT) with the beneficial effect of low thermal expansion & high strength for the first time. Since then Nb+Co addition has been used in mass production by the request of much higher strength of shadow mask component. In case of Nb addition, It's thermal expansion coefficient is a little lower than normal Invar and a little higher than Co addition, meanwhile Its Mechanical property is almost similar to Co Addition. The used samples of this experiment are 36%Ni + Fe, 32%Ni + 5%Co + Fe, 32%Ni + 5%Co + 0.3%Nb + Fe, 32%Ni + 0.3%Nb + Fe with heat treatment temperature of 600$^{\circ}C$, 650$^{\circ}C$, 700$^{\circ}C$, 750$^{\circ}C$, 800$^{\circ}C$, 850$^{\circ}C$, 900$^{\circ}C$ respectively under the condition of 15min holding time. After heat treatment, we have observed the change of mechanical property with addition of small elements through mechanical property investigation and metal structure observation as well as transition of thermal expansion coefficient by measuring of thermal expansion coefficient at 850$^{\circ}C$. In conclusion, 5%Co addition indicates that its thermal expansion coefficient is very similar under the condition of at 850$^{\circ}C$ for 15min 's heat treatment. From the experimental result it is suggested that Co addition is mostly suitable for Doming property and Nb addition is mostly suitable for Drop property.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.6-11
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• 2001

We studied the feasibility of optical lithography for the critical layers of 0.12${\mu}{\textrm}{m}$ DRAM assuming ArF excimer laser as a light source. To enhance the fidelity of aerial image and process margin, Phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed Optical Proximity Correction (OPC) software. As the result, w found that the aerial image of critical layers of DRAM cell with 0.12${\mu}{\textrm}{m}$ design rule could not be reproduced with binary masks. But if we use PSM or optical proximity corrected PSM, the fidelity of aerial image ,resolution and process margin are so much enhanced that they could be processed with optical lithography.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.123-124
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• 2006

본 연구에서는 KOH 용액을 사용한 Si 습식 이방성 식각실험 진행 후, 나타나는 표면의 거친 현상을 완화하는 데에 중점을 두고 연구를 진행하였다. 이를 위해 $SiO_2$ 웨이퍼 위에 Photo-lithography 공정으로 형성시킨 PMER 패턴을 Mask로 사용하여 HF 용액으로 $SiO_2$를 식각시켰으며, 형성된 $SiO_2$를 Mask로 사용하여 KOH 용액으로 Si을 식각시켰다. 이 때, KOH와 혼합하는 용액으로 IPA와 Ethan이을 각각 사용하여 실험을 진행하였으며, ESEM을 이용하여 표면을 비교하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.66-66
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• 2006

Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).