• Title/Summary/Keyword: Mask material

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A Study for the fabrication of Au dot-arrays using porous alumina film (다공성 알루미나 박막을 이용한 Au dot-arrays의 제작에 관한 연구)

  • Jung, Kyung-Han;Park, Sang-Hyun;Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.922-925
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    • 2003
  • The interest of self-organization materials that have uniform and regular structure in nano scale has been grown due to their utilization in various fields of nanotechnology. An attractive candidate among these materials is anodic aluminum oxide film, which are formed by anodization of aluminum in an appropriate acid solution. The anodic aluminum oxide film has a highly ordered porous structure with very uniform and nearly parallel pores that can be organized in an almost precise close-packed hexagonal structure. In this study, we attempt to make Au dot arrays, which were fabricated using anodic aluminum oxide film as an evaporation mask. The Au dot arrays have a uniform sized dots and spacing to its neighbors and the average diameter of Au dots is about 60 nm corresponding to them of the mask.

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Microfluidic LOC System (Microfluidic LOC 시스템)

  • Kim, Hyun-Ki;Gu, Hong-Mo;Lee, Yang-Du;Lee, Sang-Yeol;Yoon, Young-Soo;Ju, Byeong-Kwon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.906-911
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    • 2004
  • In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

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Fabrication of Pair-Photonic Crystal Arrays using Multiple-Exposure Nanosphere Lithography (다중노광 나노구 리소그라피를 이용한 쌍-광자결정 어레이 제작)

  • Yeo, Jong-Bin;Han, Gwang-Min;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.3
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    • pp.245-249
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    • 2010
  • Two dimensional(2D) pair-photonic crystals (pair-PCs) have been fabricated by a multiple-exposure nanosphere lithography (MENSL) method using the self-assembled nanospheres as lens-mask patterns and the collimated laser beam as a multiple-exposing source. The arrays of the 2D pair-PCs exhibited variable lattice structures and shape the control of rotating angle (${\Theta}$), tilting angle (${\gamma}$) and the exposure conditions. In addition, the base period or filling factor of pair-PCs as well as their shapes could be changed by experimental conditions and nanosphere size. A 1.18-${\mu}m$-thick resist was spincoated on Si substrate and the multiple exposure was carried out at change of ${\gamma}$ and ${\Theta}$. Images of prepared 2D pair-PCs were observed by SEM. We believe that the MENSL method is a suitable useful tool to realize the pair-periodic arrays of large area.

$N_2$ Gas roles on Pt thin film etching using Ar/$C1_2/N_2$ Plasma (Ar/$C1_2/N_2$플라즈마를 이용한 Pt 박막 식각에서 $N_2$ Gas의 역할)

  • 류재홍;김남훈;이원재;유병곤;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.468-470
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    • 1999
  • One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

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Inductively Coupled Plasma Chemical Vapor Deposition System for Thin Film Ppassivation of Top Emitting Organic Light Emitting Diodes (전면발광 유기광소자용 박막 봉지를 위한 유도결합형 화학 기상 증착 장치)

  • Kim Han-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.538-546
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    • 2006
  • We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

3D digital fashion design utilizing the characteristics of the mask of Nuo, Jiangxi province, China (중국 장시성 누오(儺) 가면의 특성을 활용한 3D 디지털 패션디자인)

  • Liu, Huan;Lee, Younhee
    • The Research Journal of the Costume Culture
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    • v.30 no.3
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    • pp.455-476
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    • 2022
  • The aim of this study was to develop Jiangxi Nuo masks using 3D digital fashion design technology and suggest various ways to utilize traditional culture based on the characteristics of Nuo masks, a traditional Chinese artifact of intangible cultural significance. The researchers conducted a literature review to gather information about Nuo culture and masks that could represent Jiangxi. Features of the masks were analyzed and classified. The result are as follows. First, the symbolic characteristics of Jiangxi's Nuo masks can be divided into those based on their origin and history, the user's social status, and the notions of primitive beliefs of the chosen people, such as naturism and totemism. Second, Nuo masks' splendid decorations convey meanings such as luck, the bixie, longevity, wealth, and peace in the family. Third, playfulness in mask-making is about dismantling the original form of the mask, re-creating it through application. Fourth, the masks express primitiveness mostly by conserving the wood's original color or material. The initial masks carved to represent images of figures aptly deliver the primitive forms and images of Nuo culture. In this study, Nuo masks were developed and produced using the 3D digital technology CLO 3D by adopting the expressive characteristics and applying design methods such as asymmetricity, exaggeration, and modification. The results of this study demonstrate the possibility of creating diverse as well as economical designs through the reduction of production.

A Study on the Change of Masks for Goseong Ogwangdae Play - Before and after the designation of intangible cultural assets- (고성오광대 연희용 탈의 변화 양상)

  • Nam, Jin-A
    • (The) Research of the performance art and culture
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    • no.41
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    • pp.257-284
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    • 2020
  • Goseong Ogwangdae started academic research in the late 1950s and was designated as a national intangible cultural asset in 1964. From the time of the academic survey to the time of designation, it was recorded as using paper masks, but when the recording image was filmed in 1965, it was already changed to wooden masks. In 1960, before being designated as an intangible cultural asset, the number of masks, which was 9 points, gradually increased to 19 points in 1964. It is necessarily included in the leper, Chorani, Malttuki, Cheongbo-Yangyang, Halmi, and Jemilju, but the character of the yangban is not yet clearly differentiated. Hwangbongsa and Sangju appeared as bare faces, and consumption, milling, Cheongbo-Yangyang are used together with Bibi and inspiration. It can be guessed that Bibi was not the appearance of a foreign object with horns as it is now, considering that Bibi and Madangsoi were used together. Since 1965, shortly after the designation, the whole of the Goseong Ogwangdae mask has been changed to a wooden mask. All the characters except for resident, courtyard, and top-of-the-line are wearing masks. Bibi, Hongbaek, and service masks have never appeared until 1964. The Yangban was changed to the closing ceremony with six people in the order of Won-Yangban, Baekje, Heukje, Cheongje, Hongbaek, and Jonggadoryong. Starting in 1969, the mask enters the stable period where the kind is the same as the present. Bibi-Yangban uses both the Won-Yangban and the Jemilju uses the Somu, but all other characters use the individual mask to use a total of 18 masks. The Yangbans are clearly differentiated, and a total of seven Yangban appear. The reason why the change in the type of mask and the expression of material is so large is that the first generation of mask makers died and the tradition of mask production was cut off, but there is also a cause of the extreme change in the environment of the drama that the performers who joined after the designation had to face. Also, it is closely related to the change of the times when the meaning and weight of masking in masking has changed. At that time, the performers were not so tied to the current concept of 'original form' that they preserved the appearance of the designated time. Originally, Goseong Ogwangdae was centered on improvisation dance, not the formalized dance as it is now, and there was a certain fluid aspect in the retelling, so it was flexible in the use of masks even before the designation of cultural assets. Strict rules did not apply in the details, as it was a self-sufficient play by the performers, not an offer event. The form and contents of this fluid play are changed to preparation for the performance while preparing for the folk art contest. As the subject of the contest in self-sufficient play, dance, costumes, and props became more and more colorful as well as dancing, costumes, and props. As a result, participation in the contest brought about changes in the overall performance and changed the mask, which was accepted within the preservation society.

Metal Gate Electrode in SiC MOSFET (SiC MOSFET 소자에서 금속 게이트 전극의 이용)

  • Bahng, W.;Song, G.H.;Kim, N.K.;Kim, S.C.;Seo, K.S.;Kim, H.W.;Kim, E.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.358-361
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    • 2002
  • Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

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Flexible Antenna Radiator Fabricated Using the CNT/PVDF Composite Film (CNT/PVDF 복합막을 이용한 유연소자용 안테나 방사체)

  • Kim, YongJin;Lim, Young Taek;Lee, Sunwoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.3
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    • pp.196-200
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    • 2015
  • In this paper, we fabricated flexible antenna radiator using the CNT/PVDF (carbon nanotube / polyvinylidene fluoride) composite film. We used polymer film as a matrix material for the flexible devices, and introduced CNTs for adding conductivity into the film resulting in obtaining performances of the antenna radiator. Spray coating method was used to form the CNT/PVDF composite radiator, and pattern formation of the radiator was done by shadow mask during the spray coating process. We investigated the electrical properties of the CNT/PVDF composite films with the CNT concentration, and also estimated the radiator performance. Finally we discuss the feasibility of the CNT/PVDF composite radiator for the flexible antenna.

Flexible electronic-paper active-matrix displays

  • Huitema, H.E.A.;Gelinck, G.H.;Lieshout, P.J.G. Van;Veenendaal, E. Van;Touwslager, F.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.141-144
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    • 2004
  • A QVGA active-matrix backplane is produced on a 25${\mu}m$ thin plastic substrate. A 4-mask photolithographic process is used. The insulator layer and the semiconductor layer are organic material processed from solution. This backplane is combined with the electrophoretic display effect supplied by SiPix and E ink, resulting in an electronic paper display with a thickness of only 100${\mu}m$. This is world's thinnest active-matrix display ever made.

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