• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국진공학회지
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• 제17권2호
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• pp.165-169
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• 2008

반도체 소자공정에서 균일한 두께의 금속박막을 증착하는 것은 매우 중요하다. 기존의 기판고정식 sputtering 장비로 증착한 indium tin oxide(ITO)박막의 두께 균일도가 $\pm4%\sim\pm5%$ 정도로 중앙부분이 더 두껍다. 방전전극 구조물을 설계하고 제작하여 sputtering되는 물질의 방향을 조절하였다. 개량된 sputtering gun을 사용하여 기판고정식 sputtering 장비에서 4" wafer 내에서 $\pm0.8\sim1.3%$ 정도로 두께 균일도를 증가시켰다. wafer to wafer에서는 $\pm$5.3%에서 $\pm$1.5%로 두께 균일도가 향상되었다. Al박막의 경우 $\pm$1.0% 이내의 두께 균일도를 얻을 수 있었다.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.111-116
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• 2010

In a large area magnetron sputtering system, which is under the influence of high heat load from the plasma, it is necessary to use the effective water cooling in order to maintain the proper deposition performance and the economic use of target materials. A series of three-dimensional numerical simulations are carried out on the simplified model of the large area magnetron sputtering system with the cooling plate that includes the U-shaped water channel. The analysis is focused on the effects of water channel geometry, cooling water flowrate, thermal conductivity of target material, and the degree of target erosion on the cooling performance of cooling plate, which is represented by the temperature distribution of target material.

• 한국진공학회지
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• 제2권4호
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.173-175
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• 1990

A dc magnetron system for cathode sputtering with a spool-shaped cathode is described. The sputtering conditions are discussed concerning pressure, magnetic field and discharge current.

• 한국표면공학회지
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• 제41권6호
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• pp.274-278
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• 2008

3-dimensional numerical analysis for a rectangular magnetron cathode model is done to predict cooling characteristics of high power sputtering system for ZnO deposition. It includes cooling channel design, heat transfer analysis of a target, bonding layer and backing plate. In order to model erosion profiles of a target, ion current density distribution from 3D Monte Carlo simulation is used to distribute total sputtering power to 5 discrete regions. At 3 kW of sputtering power and cooling water flow of 1 liter/min at $10^{\circ}C$, the maximum surface temperature was $45.8^{\circ}C$ for a flat new target and $156^{\circ}C$ for a target eroded by 1/3 of its thickness, respectively.

• 한국진공학회지
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• 제8권3A호
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• pp.245-248
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• 1999

Recently low resistance of gate line or data line is required for large screen size TFT-LCD panels. As a result, lower resistance Al-alloy is currently reviewed extensively and the resistivity is required smaller than 10$\mu\Omega$cm. In this paper, Al-Nd and Al-Zr thin film were deposited on glass substrated by D.C. magnetron sputtering system under various condition. Its properties were characterized by SEM, AFM, XRD and 4-point-probe. The optimal condition was $120^{\circ}C$, 125W, 0.4Pa, 30sccm (Ar) and $350^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-Zr(0.9%wt.) is about 4$\mu\Omega$cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.387-387
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• 2010

최근 ZnO 박막은 투명 박막, 태양전지, LED 등으로의 응용을 위한 새로운 기능성 박막으로 활발히 연구되어 지고 있다. ZnO 기반의 투명 박막 트랜지스터는 상온에서 증착 가능하여 유리기판을 이용한 광학소자와 플라스틱 기판을 이용한 플럭서블 소자 같은 차세대 전자소자를 구현 할 수 있다. 본 연구에서는 RF Magnetron Sputtering System을 이용하여 coming 1737 유리기판 위에 ZnO 박막을 공정압력에 따라 증착하고, 투명 반도체에 적합한 활용을 위한 구조적, 광학적 분석을 실시하였다. 박막 증착 조건은 초기 압력 $1.0{\times}10^{-6}$Torr, RF 파워는 100W, Ar 유량은 100sccm, 그리고 증착온도는 상온이었다. 증착 압력은 $7.0{\times}10^{-3}$, $2.0{\times}10^{-2}$, $7.0{\times}10^{-2}$Torr로 변화시켰다. 표면 분석 (SEM, AFM) 결과 증착압력이 고진공으로 변화함에 따라 결정립들이 감소하였고 RMS roughness값이 낮아졌다. 그리고 XRD 분석을 통해 피크강도는 증가하고 FWHM은 감소함을 보이고 있는데 이는 결정성이 좋아짐을 나타낸다. 그리고 광학 투과도를 통해 가시광 영역에서의 높은 투과도(85% 이상)을 확인하였고, 고진공으로 변화함에 따라 밴드갭이 넓어지는 것을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.