• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.355.2-355.2
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• 2014

Zirconium nitride (ZrN)는 높은 열적, 화학적 특성과 우수한 기계적 강도, 낮은 전기 저항성 때문에 절삭공구, 의료용품 등으로 널리 사용된다. 특히 물리증착법 (PVD)으로 증착 할 경우 실제 hardness보다 높은 특성을 가지고 내마모성과 고온에서 hardness가 우수한 것으로 알려져 있다. 본 실험에서는 물리증착법 중 하나인 rf magnetron sputter를 사용하여 질소 유량에 따른 zirconium nitride 박막을 증착하였다. 그 후, $600^{\circ}C$, N2 분위기에서 후열처리를 진행하였고, 후열처리에 따른 박막의 nano-electrotribology 특성 변화를 관찰하기 위해 nano-indenter를 사용하였다. 측정결과, 질소 유량이 0, 0.5, 5 sccm으로 변함에 따라 증착된 박막의 hardness는 18.62, 15.64, 13.58 GPa로 각각 감소되었으며, elastic moduls도 210.43, 185.15, 171.52 GPa로 감소하였다. 이는 증착 과정에서 과포화된 N2 가 후열처리 과정에서 빠져 나오는 것으로 알 수 있다.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.833-841
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• 1998

ZnO thin films on glass substrate were deposited by on RF mangetron reaction sputter with various grgon/oxygen gas ratios and sbustrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, AFM, XPS, RBS, and electrometer(keithley 617). All films showed a strong perferred orientation along the x-axis on glass substrate, and the chemical stoichiometry of Zn/)=1/1.0 was obtained at Ar/$O_2$ =50/50. Surface roughness and resistivity depended on the argon/oxygen gas ratio. The minimum surface roughness of 20$\AA$ and maximum resistivity of $10^8$ $\Omega$ cm were achieved at Ar/$O_2$=10/90.

• Journal of Information Display
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• 제12권2호
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• pp.89-92
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• 2011

Advanced static DC magnetron sputtering methods based on the magnet wobbling technique were investigated to achieve highly uniform and homogeneous metallization layers. The novel split sputter mode (SSM) method, wherein the deposition process is divided into two distinct steps, enables the AKT rotary cathode technology to provide excellent layer properties, while keeping a high production throughput. The effectiveness of theSSMtechnique was demonstrated through copper-coated large-area substrates.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1414-1415
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• 2006

Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane$(SiO_2)$ and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.181.2-181.2
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• 2015

Sputtering is one of the most popular physical deposition methods due to their versatility and reproducibility. Synthesis of Cr thin films by DC magnetron sputtering using glancing angle deposition (GLAD) has been reported. Chromium thin films have been prepared at two different working pressure($2.0{\times}10-2$, 30, $3.3{\times}10-3torr$) on Si-wafer substrate using magnetron sputtering with glancing angle deposition (GLAD) technique. The thickness of Cr thin films on the substrate was adjusted about 1 mm. The electrical property was measured by four-point probe method. For the measurement of density in the films, an X-ray reflectivity (XRR) was carried out. The sheet resistance and column angle increased with the increase of glancing angle. However, nanohardness and density of Cr thin films decreased as the glancing angle increased. The measured density for the Cr thin films decreased from 6.1 to 3.8 g/cc as the glancing angle increased from $0^{\circ}$ to $90^{\circ}$ degree. The low density of Cr thin films is resulted from the isolated columnar structure of samples. The evolution of the isolated columnar structure was enhanced at the conditions of low sputter pressure and high glancing angle. This GLAD technique can be potentially applied to the synthesis of thin films requiring porous and uniform coating such as thin film catalysts or gas sensors.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• 열처리공학회지
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• 제12권3호
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• pp.199-205
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• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.28-31
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• 2000

BaTiO$_3$cerameic thin films doped with Mn were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PRCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperature. Second heat treatment of the specimen were performed in the temperature range of 400 to 1350$\^{C}$ X-ray diffraction patterns of BaTiO$_3$ thin films show that the specimen heat treated below 600$\^{C}$ is an amorphous phase and the one heat treated above 1100$\^{C}$ forms a poly-crystallization . In this specimen heat-treated at 1300$\^{C}$, a lattice constant ratio(c/a) was 1.188. Scanning electron microscope(SEM) image of BaTiO$_3$ thin films of the specimen heat treated in between 900 and 1100$\^{C}$ shows a grain growth. At 1100$\^{C}$, the specimen stops grain-growing and becomes a poly-crystallization . A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn. A resistivity ratio between the value at room temperature and the one above Curie temperature was 10$^4$ for pure BaTiO$_3$ thin films and 10$\^$5/ fo BaTiO$_3$ : additive 0.127mol% MnO

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.169-170
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• 2007

In this paper we report upon an investigation into the effect of sputter pressure and RF power on the electrical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. Argon gas pressure and RF power were in the range of 1~11 mTorr, and 50~100 W, respectively. However, the resistivity of the film was strongly influenced by the sputter pressure and RF power. We were able to achieve as low as $1.5{\times}10^{-3}\;{\Omega}cm$, without substrate temperature.