• Journal of the Korean Magnetics Society
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• v.25 no.4
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• pp.117-122
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• 2015

The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.86-92
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• 1996

The structural, magnetic and magnetoresistance properties of Co/Ag multilayer films prepared by thermal coevaporation were studied. When the Ag layer was $60{\AA}$ thick, the Co layer behaved ferromagnetically even with the thickness of $5{\AA}$. However, when the thickness of Ag layer was $30{\AA}$ and that of Co layer was less than $15{\AA}$ thick, the Co layer became discontinuous and the islands of Co behaved mostly superpararnagnetically. The maximum MR ratio, 6.1% was obtained in the $3000{\AA}\;Ag30{\AA}/Co10{\AA}$ Ag30 A ICo 10 A discontinuous multilayer. Agglomeration of the Co layer was promoted by annealing and hence MR ratio increased when the thickness of Ag layer was thinner than $15{\AA}$. The SiO underlayer enhanced the MR ratio in the $1000{\AA}$ thick multilayer via the layer structure improvement.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.173-177
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• 2012

The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.112-117
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• 2000

We inserted CoO layer in NiO spin-valves to improve on magnetoresistance and exchange coupling field. The magnetoresistance ratio was increased from 4.5 % to 5.5 % with the increase of CoO thickness. We can not find the dependence between (111) texture and exchange coupling by the measurement of XRD of CoO/NiO spin-valves. The surface roughness of CoO layer, 6.1 $\AA$ is twice more than that of NiO layer, 3.1 $\AA$. The increase of exchange coupling field and coercive field in the CoO/NiO spin-valves will be due to increasing roughness. We prepared the NiO/CoO/NiO/CoO/NiO spin-valves to reduce coercive field and the coercive field decreased from 110 Oe to 50 Oe, and the coupling field is not changed from 70 Oe.

• Journal of the Korean Magnetics Society
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• v.7 no.3
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• pp.146-151
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• 1997

Buffer (t $\AA$)/ CoFe(35$\AA$)/Cu (50$\AA$)/Co (35$\AA$) sandwiches prepared by dc magnetron sputtering on Corning glass substrates using the $Co_{90}Fe_{10}$ and Co layers with different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layers, and on the thickness of Cu and the magnetic layers in buffer/ CoFe/Cu /Co sandwiches were investigated. Magnetoresistance ratio and saturation field $H_s$ increased as thickness of the buffer layer becomes thicker, then decreased smoothly after a maximum value. An improved filed sensitivity was realized with the $Ni_{81}Fe_{19}$ buffer layer.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.48-53
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• 1995

The structure, magnetic properties and magnetoresistance phenorrena of Ag-Co nano-granular alloy films prepared by a thermal co-evaporation were studied. Supersaturated fee Ag-Co solid solution and fee Co clusters coexisted in the as-deposited state. As Co content increases from 20 to 55 at.% Co, the grain size of the Ag matrix decreases from 147 to $67{\AA}$, and the Co solubility in the Ag matrix increases from 2.5 to 6.7%. Ag-Co alloy films having composition below 25 at.% Co showed mainly superparamagnetic behavior and above that composition, they showed both paramagnetic and ferromagnetic l::ehavior in the as-deposited state. The maximum magnetoresistance of 19% at R. T. and 10 kOe was obtained in the as-deposited 30 at.% Co alloy film. Heat treatment did not improve the MR ratio tecause most of the Co was already precipitated in the as-deposited state.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.104-110
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• 1999

The effect of the composition and the heat treatment on the magnetic and magnetoresistance properties in AgCo alloy films and Fe/AgCo/Fe trilayers prepared by the co-evaporation method were studied. As the alloy film thickness decreases, especially below 50 nm thick, the magnetoresistance decreases and the saturation field increases significantly. The change of the Co content, heat treatment, and deposition of the Fe under/over-layer were effective to prevent the reduction of the and the increasing of the saturation field. For 40 at.%Co sandwiches, the minimum saturation field was obtained in the 20 nm alloy film with 30nm Fe under-over layer annealed at 300 $^{\circ}C$ for 10 min. Its saturation field and the MR ratio were 1.01 kOe 5.16% respectively.