• Journal of Korean Ophthalmic Optics Society
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• v.11 no.3
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• pp.225-229
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• 2006

In our angle configuration, several peculiar characteristic behaviors of MR could be observed, the mixing of positive MR(PMR) and negative MR(NMR) in the inclined sample was observed. The complete mixing angle, ${\phi}_{mix}$ as a function of inclination angle, ${\theta}$ was observed to fit well to the relation of ${\phi}_{mix}=tan^{-1}(1+tan{\theta})$ in nickel films. The above theoretical relation was obtained by decomposing the magnetic field into the components parallel and perpendicular to the current flow and identifying ${\phi}_{mix}$ as the angle satisfying that the above two components of magnetic field were identical. We also observed that the data of ${\phi}_{mix}$ did not satisfy the above theoretical relation in the iron film. This was explained by the fact that the growth direction in the iron film was an intermediate direction of magnetization, while the growth direction in the nickel film was an easy axis of magnetization.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.367-373
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• 2006

We have observed a large increase in the magnetoresistance (MR) of Bi thin films, which were subjected to a post-annealing procedure at $268^{\circ}C$C, $3^{\circ}C$ below the Bi melting point. We have achieved an increase in the MR by 260-fold and 1200-fold at 5 K and 5 T after post-annealing, as compared with 190 and 620 for an as-deposited Bi film on PbTe/CdTe(111) and on mica, respectively. The large MR increase by post-annealing might be due to the improvement of crystallinity according to the x-ray analysis. However, post-annealing over a certain amount time showed the reduction in MR values.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.86-92
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• 1996

The structural, magnetic and magnetoresistance properties of Co/Ag multilayer films prepared by thermal coevaporation were studied. When the Ag layer was $60{\AA}$ thick, the Co layer behaved ferromagnetically even with the thickness of $5{\AA}$. However, when the thickness of Ag layer was $30{\AA}$ and that of Co layer was less than $15{\AA}$ thick, the Co layer became discontinuous and the islands of Co behaved mostly superpararnagnetically. The maximum MR ratio, 6.1% was obtained in the $3000{\AA}\;Ag30{\AA}/Co10{\AA}$ Ag30 A ICo 10 A discontinuous multilayer. Agglomeration of the Co layer was promoted by annealing and hence MR ratio increased when the thickness of Ag layer was thinner than $15{\AA}$. The SiO underlayer enhanced the MR ratio in the $1000{\AA}$ thick multilayer via the layer structure improvement.

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.224-230
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• 1998

The relationships between R-H curves of gaint magnetoresistance (GMR) spin valve trilayer films and M-H curves of each magnetic layer consisting of the trilayer films were analyzed and simple formula representing the relations between the curves were suggested for theoretical analysis and study of magnetoresistance (MR) in those films, especially where the MR is from the difference of coercivity. Using two kinds of NiFe/Cu/Co films, which had been deposited on Cu(50 $\AA$)/Si(111, 4$^{\circ}$ tilt-cut) and Cu(50 $\AA$)/glass, R-H and M-H curves were measured and compared with the calculated ones, which were obtained by appying the M-H curves of single NiFe and Co films, deposited on the same substrates, to the previously reported single-domain and multi-domain models. The calcuated ones were well consistent with the measured ones and the suggested simple relationships between R-H and M-H curves are thought to be very useful for the deep understanding of MR behavior and the reasonable approach to improve MR properties in GMR spin valve trilayer films.

• Journal of Magnetics
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• v.17 no.3
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• pp.176-184
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• 2012

The structural, magnetic and magnetotransport properties of $La_{0.67}Ca_{0.33}MnO_3$: $Ag_x$ (x = 0, 0.1, 0.2, 0.3 and 0.4) composites were investigated systematically. X-ray and EDX analysis indicated that Ag is not substituted into the main $La_{0.67}Ca_{0.33}MnO_3$ phase and remains an additive to the second phase at the grain boundary. The Curie temperature first decreased from 269 K for x = 0 to 257 K for x = 0.1 and then remained nearly unchanged with increasing Ag content. For the x > 0.1 samples, a second transition temperature ($T_{MI2}$) was observed in the resistance curves. At temperatures below 150 K, a significant enhancement in MR was observed while high temperature MR decreased with increasing Ag content. The maximum MR was observed to be 55% in the x = 0.4 sample at 10 K and a 6T magnetic field, this value is larger than that of pure $La_{0.67}Ca_{0.33}MnO_3$ (53% at 265 K and 6 T). In addition, at low fields (H < 1T), a sharp increase in the MR was observed.

• 전기의세계
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• v.33 no.4
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• pp.214-220
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• 1984

본고에서는 SI Ga As의 제조방법 및 전도매체들의 깊은 에너지위치(deep level)에 의한 상쇄현상(compensation)을 간략히 설명한 후 넓은 자장영역 (B=0-13T)에서의 Hall 효과 및 magnetoresistance (MR)에 의한 전기적 특성 연구방법을 설명하고, 전도매체의 재결합 현상을 연구할 수 있는 일반화 PME효과 (FA-PME)에 대해 기술한 후 SI Ga As 기판의 응용에 대해 간략히 기술하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.154-155
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• 2003

Substituting transition metals such as V, Cr, Mn, Fe, Co and Ni into semiconductors have been of interest because of its unique electrical and magnetic properties. It was reported that the magnetoresistance(MR) ratio of CrGe was 1.7% and 1 4% at 120 K in fields of 0.5 and 5 T, respectively. The MR ratio of FeGe was 19% at 180K. The electrical resistivity of CrGe changed according to Cr concentration. In this talk, we report transport properties of V-doped Ge single crystals with several different V concentrations. The carrier densities and mobilities will be determined from Hall measurement.

• Journal of Magnetics
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• v.10 no.2
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• pp.52-57
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• 2005

In this research, magnetoresistance (MR) ratio (MR), resistivity, and exchange coupling field $(H_{ex})$ behaviors for sputter deposited spin valves with FeMn antiferromagnetic layer have been extensively investigated by rapid thermal annealing (RTA) as well as conventional annealing (CA) method. 10 s of RTA revealed that interdiffusion was not significant up to $325^{\circ}C$ at the interfaces between the layers when the RTA time was short. The MR of FeMn spin valves were reduced when the spin valves were exposed to temperature of $250^{\circ}C$, even for a short time period of 10 s prior to CA. $H_{ex}$ was maintained up to $325^{\circ}C$ of CA when the specimen was subjected to 10 s of RTA at $200^{\circ}C$ prior to CA, which is $25^{\circ}C$ higher than the result obtained from the CA without prior RTA. Therefore, the stability of $H_{ex}$ could be enhanced by a prior RTA before performing CA up to annealing temperature of $325^{\circ}C$. MR and sensitivity of the specimens annealed without magnetic field up to $275^{\circ}C$ were recovered to the values prior to CA, but $H_{ex}$ was not recovered. This means that reduced MR sensitivity and MR during the device fabrication can be recovered by a field RTA.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.370.1-370.1
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• 2014

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to $1.6{\Omega}-cm$ for x=1. The magnetoresistance (MR) was measured with magnetic field applied perpendicular to film. A negative transverse MR was disappeared with x=0.6 and 1. Anomalous Hall data will be discussed.