• 동력기계공학회지
• /
• 제22권1호
• /
• pp.41-47
• /
• 2018

This paper analyzes the output characteristics of a self excited induction generator with isolated mode according to change of its speeds and loads for building a hybrid electric propulsion system in special purpose ships by using power take off. The induction generators are being considered as an alternative choice to the well-developed generators because of their lower unit cost, inherent ruggedness, operational and maintenance simplicity. However, the generator working by stand alone has a few problems that the reactive power is required to establish the air gap magnetic flux, and the induced voltage and magnetizing current fluctuate when the load is varied. In spite of its advantages, basic design data of the capacitor bank and behaviors of the output characteristics of the generator are not sufficient for the system. Based on the operating condition(speed range of main engine) of the target boat, a reduced experimental equipment system was constructed to analyze the output characteristics of the SEIG. And a suitable capacitor bank of a stand-alone generator and its output characteristics under various loads was investigated in detail through these experiments. According to the experimental result, it was confirmed that the capacitor bank should be $70{\mu}F{\sim}100{\mu}F$, and the proper SEIG induced voltage should be DC 80 V ~ 250 V in order to storage electrical energy into a battery.

• 한국전자통신학회논문지
• /
• 제19권2호
• /
• pp.355-360
• /
• 2024

본 논문에서는 4-코일 방식의 자기공진 무선전력전송 시스템을 구현하는 데 있어서, 송전 공진코일의 끝단에서 발생하는 선간 방전현상을 연구하였다. 자기공진 무선전력전송은 급전코일, 송전 공진코일, 수전 공진코일, 부하코일로 구성되어 있다. 여기서 송전 공진코일은 급전코일에서 발생한 자기장을 증폭하여 전방의 수전 공진코일로 전달하는 역할을 한다. 큰 전력을 전송하기 위하여 급전코일에 높은 전류를 흘려주면 송전 공진코일 끝단에 높은 전압이 유기되어 선간 방전현상이 일어나게 된다. 선간 방전현상은 송전기 케이스를 손상시키게 되고, 송전기를 사용할 수 없는 상태로 만든다. 따라서 이러한 선간 방전현상을 제거하기 위하여, 선간 방전을 일으키는 송전 공진코일에 유기되는 전압을 분석하고, 해결 방안을 제시하였다.

• 한국감성과학회:학술대회논문집
• /
• 한국감성과학회 2000년도 추계학술대회 논문집
• /
• pp.98-104
• /
• 2000

The conventional model did not take momentum conservation into consideration when the electron absorbs and emits the photons. II-ray provides momentum conservations on any directions of the entering photons, and also the electrons have radial momentum conservations and fully elastic bouncing between two atoms, in the new atom model. Conventional atom model must be criticized on the following four points. (1) Natural motions between positive and negative entities are not circular motions but linear going and returning ones, for examples sexual motion, tidal motion, day and night etc. Because the radius of hydrogen atom's electron orbit is the order of 10$^{-11}$ m and the radia of the nucleons in the nucleus are the order of 10$^{-14}$ m and then the converging $\pi$-gamma rays to the nucleus have so great circular momentum, the electron can not have a circular motion. We can say without doubt that any elementary mass particle can have only linear motion, because of the $\pi$-rays'hindrances, nearthenucleus. (2) Potential energy generation was neglected when electron changes its orbit from outer one to inner one. The h v is the kinetic energy of the photo-electron. The total energy difference between orbits comprises kinetic and potential energies. (3) The structure of the space must be taken into consideration because the properties of the electron do not change during the transition from outer orbit to inner one even though it produces photon. (4) Total energy conservation law applies to the energy flow between mind and matter because we daily experiences a interconnection between mind and body. Conventional Concept of Electric Field must be extended in the case of the direct and alternating current. Conventional concept is based on coulomb's force while the electric potential in the direct and alternating current is from Gibb's free energy. And also conventional concept has not any consciousness with human being but the latters has a conscious sensibility. The cell emf is from the kinetic energy of the open $\pi$-rays flow through the conducting wire. The electric potential in alternating current is from that the trans-orbital moving of the induced change of magnetic field in the wire produces flows of open $\pi$-rays, which push the rotating electrons on the orbital and then make the current flow. Human consciousness can induce a resonance with the sensibility of the open $\pi$-rays in the electric measuring equipment. Specially treated acupunctures with Nasucon is for sending an acupunctural effect from one place to another via space by someone's will power.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.135-135
• /
• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• 한국정보통신학회:학술대회논문집
• /
• 한국정보통신학회 2012년도 춘계학술대회
• /
• pp.564-567
• /
• 2012

광섬유는 신호를 전달하는 통신용 섬유, 물체를 관찰하기 위한 이미지 섬유, 각종 센서용 광섬유로서 원자력분야에서 사용된다. 특히 센서용 섬유로서 라만 산란광을 이용한 온도감지 섬유와 광섬유 브래그 격자을 이용한 온도/스트레인 섬유, 광자기효과를 이용한 광회전센서 섬유 등은 이미 실용화되어 있다. 그러나 광섬유에 방사선을 조사하면 색중심(color center)이 생성되어 광의 투과성이 크게 저하되고, 방사선 환경에서 적용의 제한이 있다. 본 논문에서는 고준위 방사선환경에 대한 광섬유 센서의 적용을 위한 연구로서 Ge가 함유된 일반단일모드 광섬유에 대한 감마선 조사에 따른 전송손실 특성 평가를 수행하였다. 시험에 사용된 방사선원은 $Co^{60}$ 감마선원으로, 총 4시간동안 0.5kGy/hr, 2kGy/hr, 8kGy/hr의 선량률(dose rate)로 조사하였다. 그 결과 감마선조사에 의한 단일모드 광섬유의 전송손실이 뚜렷하게 나타났고, 동일 누적선량에서 선량률이 클수록 전송손실이 증가하는 선량률 효과와 조사 후 광섬유의 전송손실이 클수록 손실 회복율이 증가하는 열화(annealing) 특성을 보였다. 본 시험결과는 향후 광섬유의 내방사화 연구의 기초자료로 활용할 계획이다.

• 한국융합학회논문지
• /
• 제9권3호
• /
• pp.257-263
• /
• 2018

고주파 열치료법은 1MHz 이상의 RF 고주파 전류를 전극을 통해 종양조직으로 공급, 가열하여 종양조직의 온도를 $42.0^{\circ}C$이상으로 상승시켜 열괴사시키는 치료법으로 알려져 있다. 인체 내에서 전자기에너지의 흡수와 전달을 위한 수학적으로 모델링과 생물학적인 신체조직의 온도 필드 분포의 해석과 평가를 통해 생체조직을 구성하는 분자들이 진동하면서 서로 마찰되어 열에너지로 전환되는 과정을 분석할 수 있다. 본 논문에서는 3차원 모델의 기하학적 형상의 성인남자 표준모델을 토대로 인체모형을 설정하고, 계산은 유한체적법 코드를 활용하였다. 인체에 전극을 장착하여 외부에서 유도되는 자기장을 모사한 쥴열이 공급되는 것으로 가정하였고 이에 대한 온도분포를 0-1,200초 동안 해석하였다. 시뮬레이션의 결과, 전달된 에너지는 전극의 가장자리로부터 전극의 안쪽으로, 피부 표면으로부터 피하층으로 점진적으로 침투되어 폐종양세포에 전달되어 종양이 열괴사하는 과정을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.312-312
• /
• 2012

Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.100-101
• /
• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국식품과학회지
• /
• 제41권2호
• /
• pp.131-135
• /
• 2009

시판 분말 라면수프(RS-1, RS-2)에 대하여 방사선 조사선원(감마선, 전자선, 0-20 kGy)에 따른 ESR 분석특성을 연구한 결과, 수프에 함유된 결정형 당이 방사선 에너지에 의해 free radical을 생성하는 것으로 나타났다. 즉, 방사선 처리되지 않은 2종의 라면수프에서는 $Mn^{2+}$ radical이 나타났으나, 조사시료의 ESR spectra는 RS-1에서 g = 2.011, 2.006, 2.002 및 1.999, RS-2에서 g = 2.010, 2.006, 2.002 및 1.999의 4개의 peak를 가진 multi-component signal이 각각 확인되어 조사여부의 판별이 가능하였다. 또한 감마선 및 전자선과 조사선량에 따른 ESR intensity를 비교한 결과, 동일 측정조건에서는 모든 선량에서 전자선 조사시료가 감마선 조사시료보다 높은 강도를 나타내었다. 라면수프의 방사선 조사선량과 ESR intensity 간의 R2는 0.9665 이상을 보이면서 각 signal의 intensity는 조사선량이 증가함에 따라 일정한 비율로 증가하였으며, g-value가 나타나는 자장영역은 일정하였다. 이들 중 강도가 큰 $g_2$(2.010-2.011)와 $g_3$(2.002)의 signal 증가는 조사선량과 높은 선형적 상관을 나타내었다($R^2$= 0.9750-0.9981).

• 한국의학물리학회지:의학물리
• /
• 제14권4호
• /
• pp.259-267
• /
• 2003

실험적 뇌손상 전후에 쥐의 뇌대사물질 변화를 4.7 T 자기공명분광법을 이용하여 조사하여 보았다. 자기공명 스펙트럼는 비교대상 그룹으로서 정상 쥐 우측 두전엽 피질에서 획득되었다. 유체타진손상기법(Fluid Percussion Injury)을 사용하여 뇌손상을 유발시킨후 3일 후 스펙트럼이 얻어졌다. 뇌손상 쥐의 뇌대사불질들의 변화는 정상쥐의 뇌대사물질들과 비교되었다. Neuronal marker로써 NAA/Cr 비율은 대조군에서 1.13$\pm$0.12이었고 뇌좌상부위에서 0.90$\pm$0.11로 손상전과 비교하여 대조군에 비해 유의성있는 감소소견을 나타내었으며 이는 neuronal loss를 의미하는 것으로 추정된다(P=0.001). Cho/Cr 비율은 대조군에서 0.76$\pm$0.15이었고 뇌좌상부위에서 0.91$\pm$0.17로 손상전과 비교하여 대조군에 비해 유의성있게 증가하는 경향을 나타내었으며 이는 생체막의 파괴나 염증반응과 관련된 것으로 추정된다(P=0.02). 하지만 Glx/Cr 비율은 손상전후에 유의성있는 변화를 나타내지 않았다. Lac/Cr 비율은 대조군에 비해 증가하는 경향을 나타내었고 이는 외상후 에너지 대사의 변위양상으로 고려되어진다. 이러한 소견들은 자기 공명분광법이 유체타진손상기법을 이용한 외상성 뇌좌상에서 신경병리학적 변화과정에 대한 이해를 증진시키고 나아가 외상에 의한 뇌좌상의 임상적인 평가를 위해 매우 유용한 modality임을 시사하는 것이라고 사료된다. 그러나 본 연구에서 몇몇의 케이스에서 voxel을 선정하면서 두개골의 일부가 포함되거나 혹은 죄상과 동반된 출혈로 인해 유용한 데이터를 획득하는데 어려움을 주기도 하였다. 앞으로 보다 더 세밀한 분석과 연구를 위해 유체타진 손상의 다양한 정도에서 대사물질들의 변화양상을 평가할 필요가 있을 것으로 사료된다. .