• Journal of Magnetics
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• 제19권2호
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• pp.121-125
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• 2014

$CoFe_2O_4(CFO)/BaTiO_3(BTO)/CoFe_2O_4(CFO)$ multilayered thin films were deposited on $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition (PLD) system with KrF excimer laser (${\lambda}=248nm$). BTO, CFO, BTO/CFO and CFO/BTO/CFO structured thin films were prepared and their crystal structures and microstructures, as well as their magnetic and magneto-electrical properties, were studied. The C-V characteristics of these multilayered thin films with different capacitor structures were obtained to confirm the change in their capacitances under a magnetic field. Finally, the capacitance of the CFO/BTO/CFO thin film as a function of bias voltage under an in-plane magnetic field of 1,000 Oe increased to 951.04 pF at 1 MHz, from 831.90 pF measured under no magnetic field, indicating 14.3% increase in magnetocapacitance.

• 한국세라믹학회지
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• 제44권6호
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• pp.308-312
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• 2007

Ferroelectric, magnetic, and magnetoelectric effects for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics have been investigated. The data show that magnetoelectric polarization coefficient, ${\alpha}_p$ is due to a linear coupling between polarization and magnetization, and that ${\alpha}_p$ is independent of dc magnetic bias and ac magnetic field. The values of ${\alpha}_p$ and magnetic induced susceptibility for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics are much larger than those of single $BiFeO_3$ crystal. We believe that the magnetoelectric effect is significantly enhanced by breaking of the cycloidal spin state of a long-period spiral spin structure due to randomly distributed charged imperfections.

• 한국군사과학기술학회지
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• 제14권3호
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• pp.359-363
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• 2011

An orthogonal magnetic field is often used for a military vessel in the deperm process such as Flash D deperm protocol and Anhysteretic deperm protocol. The effect of the orthogonal magnetic field on a deperm performance was investigated for a sample with strain-induced magnetization and field-induced magnetization given to different direction. A 70mm wide, 110mm long and 0.25mm thick rectangular steel plate was bent to have U-shape and to generate a strong strain on the bottom region of U-shaped steel plate. Field-induced magnetization was attached by NdFeB permanent magnet. Demagnetization was performed by applying magnetic field with a step decrement from the first field(the first shot) under the action of DC bias field.

• Journal of Magnetics
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• 제15권4호
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• pp.194-198
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• 2010

In our present work, we developed a GMI (giant magnetoimpedance) sensor system to detect magnetic fields in the milli gauss range based on the asymmetric magnetoimpedance (AGMI) effect in Co-based amorphous ribbon with self bias field produced by field-annealing in open air. The system comprises magnetoimpedance sensor probe, signal conditioning circuits, A/D converter, USB controller, notebook computer, and program for measurement and display. Sensor probe was constructed by wire-bonding the cobalt based amorphous ribbon with dimensions $10\;mm\;{\times}\;1\;mm\;{\times}\;20\;{\mu}m$ on a printed circuit board. Negative feedback was used to remove the hysteresis and temperature dependence and to increase the linearity of the system. Sensitivity of the milli gauss meter was 0.3 V/Oe and the magnetic field resolution and environmental noise level were less than 0.01 Oe and 2 mOe, respectively, in an unshielded room.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2004년도 추계학술대회논문집
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• pp.486-489
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• 2004

The active magnetic bearing (AMB) systems mounted in moving vehicles are exposed to the disturbances due to the base motion, often leading to malfunction or damage as well as inaccurate positioning of the systems. Thus, in the controller design of such AMB systems, robustness to base disturbances becomes an essential requirement. In this study, effective control schemes are proposed for the homo-polar AMB system, which uses permanent magnets for generation of bias magnetic flux, when it is subject to base motion, and its control performance is experimentally evaluated. The base motion of AMB system is modeled as the dynamic disturbances in the gravity and base excitation forces. To effectively compensate for the disturbances, the angle feed-forward controller based on the inverse dynamic model and the acceleration feed-forward controller based on the normalized filtered-X LMS algorithm are proposed. The performance test of the prototype AMB system is carried out, when the system is mounted on rate table. The experimental results show that the performance of the proposed controllers for the AMB system is satisfactory in compensating for the disturbances due to the base motion.

• 한국자기학회지
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• 제5권6호
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• pp.963-967
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• 1995

Ni/Cu 인공초격자의 계면에 얇은 NiFeCo와 NiFe층을 삽입시 Ni/Cu 인공초격자의 자기 저항 거동에 미치는 영향에 관해 연구하였다. NiFe층이 Ni/Cu 인공초격자의 계면에 삽입된 경우 6%의 자기저항과 50 Oe의 포화자장을 보였으며 이때의 자기저항곡선은 hysteresis를 거의 보이지 않았다. NiFeCo층이 삽입된 경우는 자기저항값은 7%를 보였으나 포화자장과 hysteresis가 많이 증가하였다. 교류자장원을 이용한 동적자기저항을 측정한 결과 bias 자장하에서 자기저항의 증가폭이 NiFe층을 삽입한 경우가 NiFeCo를 삽입한 경우보다 컸으며 이는 hysteresis가 작았기 때문으로 해석된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 한국자기학회지
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• 제14권5호
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• pp.186-191
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• 2004

250～850 $\mu\textrm{m}$ 크기의 FeCuNbSiB 나노결정립 합금분말에 3wt%의 전기절연체(glass frits, 활석 또는 폴리아미드 분말)를 혼합한 뒤 압축성형하여 분말코아를 만들었을 때, 절연물질의 종류에 따른 자기적 특성의 변화를 조사하고 그 결과를 비교하였다. 세라믹 물질인 glass frits와 활석은 폴리아미드에 비해 수백 kHz이하의 주파수 범위에서 높은 투자율을 나타내나 1 MHz 이상의 주파수에서는 투자율이 빠르게 낮아지는 거동을 보였다 자심손실은 glass frits와 활석을 첨가한 자심 쪽이 더 크며, 품질계수는 폴리아미드를 첨가한 자심보다 더 낮은 주파수에서 피크를 나타내고 그 값도 더 작았다. 반면 폴리아미드로 절연처리한 자심의 경우 수 MHz에 이르기까지 투자율의 저하가 거의 나타나지 않았으며, 더 우수한 자심손실 및 품질계수 특성을 보여 주었다. 그리고 직류중첩특성 또한 폴리아미드를 첨가한 자심이 100 Oe이상의 큰 자장에 이르기까지 더 우수하였다. 폴리아미드를 절연체로 사용한 경우 그 밀도가 낮음으로 인해 결국 더 많은 체적비로 혼합되므로 자성 입자 사이의 전기적 절연을 보다 더 충분히 해주고 있는 것으로 판단되었으며, 세라믹 물질을 절연체로 사용했을 때와의 이상과 같은 자기적 특성의 차이는 이 사실에 주로 의존하고 있는 것으로 평가되었다.

• 한국전자파학회논문지
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• 제23권9호
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• pp.1087-1093
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• 2012

본 논문에서는 ASK(Amplitude Shift Keying) 송신기, 한 쌍의 루프 안테나 및 ASK 수신기로 구성되는 HF-대역 자기장 통신 시스템을 구현하였다. 특히, E급 증폭기를 사용하는 ASK 송신기의 데이터 변조 방법으로 Drain 바이어스 전압을 입력 데이터에 따라 두 가지 레벨로 가변하여 공급하는 바이어스 스위칭 회로를 새롭게 제안하였다. E급 증폭기는 저가의 IRF510 power MOSFET를 이용하여 6.78 MHz에서 최대 5 W 출력과 동작 바이어스 전체에서 75 % 이상의 효율이 측정되었다. ASK 수신기는 Log 증폭기, 필터 및 비교기로 구현하여 -78 dBm의 수신 감도를 구현하였다. 자기장 통신 시스템의 최대 통신 거리를 예측하기 위하여 근역장과 원역장에서의 자기 장 유도식을 활용하여 전송 손실을 계산하는 방법을 고안하였다. 또한, $30{\times}30cm^2$ 크기의 사각형 루프 안테나쌍 을 이용한 실내 전송 실험을 수행하여 제시한 방법의 타당성을 확인하였다. 전송 손실 추정 결과, 1 W 출력과 -70 dBm 수신 감도를 가질 경우 최대 35 m의 수신거리가 계산되었다. 최종적으로 설계된 ASK 송신부와 ASK 수신부를 루프 안테나 쌍에 연결하여 5 m 거리에서 통신이 이루어짐을 확인하였다.