• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.309-314
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• 1999

The magnetized helical resonator plasma etcher has been built. Electron density and temperature were measured as functions of rf source power, axial magnetic field, and pressure. The results show electron density increases as the magnetic field increases and reached $2\times1012cm^{-3}$,/TEX>. The oxide etch rate and selectivity to polysilicon were investigated as the above mentioned conditions and self-bias voltage. We can obtain the much improved oxide etch selectivity to polysilicon (60 : 1) by applying the external axial weak magnetic field in magnetized helical resonator plasma etcher.

• 대한기계학회논문집A
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• 제28권11호
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• pp.1703-1710
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• 2004

The objective of this investigation is to formulate and carry out the topology optimization of a magnetic system consisting of permanent magnets and yokes. Earlier investigations on magnetic field topology optimization have been limited on the design optimization of yokes or permanent magnets alone. After giving the motivation for the simultaneous design of permanent magnets and yokes, we develop the topology optimization formulation of the coupled system by extending the technique used in structural problems. In the present development, we will also examine the effects of the functional form for permeability penalization on the optimized topology.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2015년도 추계학술대회 논문집
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• pp.9-10
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• 2015

EI core inductor in power electronic circuit simulation is usually assumed as linear by using matrix model. However, nonlinear magnetic characteristics such as B-H characteristic are also important for the accurate simulation of the circuit behavior. To model nonlinear magnetic characteristics of EI core inductor with only DC bias table, this paper presents a method in PLECS simulation tool which is a commercially available simulation tool for power electronics circuit analysis. Comparing with ideal matrix model, the simplification and accuracy are improved by this modeling method. Also, compared to analysis by FEM, it is much simpler, faster and easier to simulate with power electronics circuit. Validation of the proposed model was verified by simulation and experiment results.

• 한국소음진동공학회논문집
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• 제19권11호
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• pp.1184-1191
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• 2009

A bearingless linear motor(BLLM) which consists of two stators and a common mover is able to levitate and move its mover without any linear bearing or even additive windings. In the previous study, BLLM was actively controlled on the translation and pitch motion, while the roll motion is passively stable. In order to control the roll motion, this paper suggests adding active magnetic bearings(AMBs) at bottom of the mover in BLLM. The AMBs control the roll motion and also partially supports the weight of the mover. In this paper, magnetic forces generated by the AMBs are estimated by using an FEM model. Based on the analysis results, the bias current of the AMBs is determined and a PD controller is designed. Through an experimental levitation test, it was verified that roll motion is well controlled by AMB during levitation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.217-217
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• 2016

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

• 한국자기학회지
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• 제1권2호
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• pp.31-36
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• 1991

스퍼터링에 의해 형성된 비정질 Co/sub 87/Zr/sub 4/Nb/sub 9/ 박막을 TEM과 EDS로 분석하여 박막의 구조적 그리고 저성적 불균일성을 관찰하였다. 특히 기판 bias를 가한 상태에서 제조된 박막을 회전 자장 열처리했을 때는 Co-rich 지역과 (Zrnb) oxied-rich 지역의 조대한 조직으로 분리되었으며, 이러한 박 막의 자기적 특성은 'ultra-soft'한 성질을 나타내었다. Ulta-soft함 박막은 H/sub c/=0.18 Oe, H/sub k/ = 0.55 Oe, M/sub r//M/sub s/=0.75의 자기적 특성과 overdamping된 고주파특성, 그리고 외부자계에 대한 자화율 변화곡선이 가역적이고 연속적이라는 특이한 현상을 보인다. 조성적으로 불균일한 박막의 ultra-soft 한 특성은 Co-rich 입자들이 exchange coupling energy와 magnetostatic coupling energy를 최소화 하기 위해 만드는 vortex형의 자화분포로써 설명되었다. 즉 vortex 는 여러개의 co-rich 입자들로 형성 되어있는 것으로 추정되며, 수평, 수직방향으로의 반자장 계수(demagnetizing factor)가 각각 flux closure 와 flux reversal에 의해 무시되기 때문에 vortex로 부터 CoZrNb 박막의 ultra-soft 특성을 설명할 수 있었다.

• 한국자기학회지
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• 제25권3호
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• pp.74-78
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• 2015

본 연구에서는 교환 결합력을 갖는 CoFe/MnIr 박막 재료에서 강자성 공명 장치를 이용하여 자기장 방향에 따른 저자장 마이크로파 흡수(Low field microwave absorption, LFMA) 및 강자성 공명 신호를 측정하였다. 낮은 자기장 영역에서 나타나는 LFMA 신호는 자구의 회전 밀접하게 관계됨을 자화 곡선으로부터 알 수 있었다. 이러한 LFMA 신호 특성을 분석하기 위하여 강자성 공명 신호로부터 측정한 교환 바이어스($H_{ex}$ = 58.5 Oe) 및 일축 이방성 자기장($H_k$ = 30Oe)을 S-W model에 적용하여 자화과정의 횡방향 자화량(transverse magnetization, $M_{\tau}$) 및 투자율(transverse susceptibility, ${\mu}_{\tau}$)을 계산하였다. 자화 곤란축에서 측정된 LFMA 신호는 $M_{\tau}$ 비례하는 경향을 보였지만, 자화 곤란축과 수직 방향으로 접근하면 $M_{\tau}$ 및 ${\mu}_{\tau}$ 모두에 의존하는 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.177-177
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• 2012

진공을 기초로 한 다양한 반도체 식각 공정에서 RF bias가 결합된 유도 결합 플라즈마 소스는 널리 사용되고 있다. 하지만, 대부분의 연구는 RF bias에 의한 자기 바이어스 효과에만 한정되어 있으며, 공정 결과와 소자 품질에 결정적인 역할을 하는 플라즈마 변수들(전자 온도, 플라즈마 밀도)과 RF bias의 상관관계에 대한 연구는 거의 없는 실정이다. 본 연구에서는 RF bias가 플라즈마 변수에 미치는 영향과 비충돌 전자 가열 메커니즘의 실험적 증거에 관한 연구를 진행하였다. 플라즈마 밀도는 RF bias에 의하여 감소 또는 증가하였으며, 이러한 결과는 Fluid global model에 의한 계산과 잘 일치하는 결과를 보였다. 전자 온도는 RF bias에 의하여 증가하였으며, 적은 RF bias 전력에서는 플라즈마 전위에 갇혀있는 낮은 에너지 그룹의 전자들의 가열이 주가 되었으나, 큰 RF bias 전력에서는 높은 에너지 그룹의 전자들의 가열이 주가 됨을 관찰하였다. 이는 높은 에너지 그룹의 전자 가열 메커니즘이 anomalous skin effect에서 collisionless sheath heating으로 전이되는 것을 나타내며, bounce resonance heating이 RF bias의 전자가열에 중요한 역할을 함을 보여주는 실험적 근거이다. 플라즈마 밀도의 공간 분포는 RF bias의 인가에 의하여 더욱 균일함을 보였으며, 이는 (electro-static and electro-magnetic) edge effect에 의한 영향으로 해석될 수 있다. 이러한 RF bias와 플라즈마 변수들의 상관관계 및 전자 가열 메커니즘에 대한 연구는 방전 특성의 물리적 이해뿐만 아니라, 반도체 식각 공정에서 소자 품질 및 공정 개선을 위한 최적의 방전 조건 도출과 외부 변수 제어에 큰 도움을 주리라 예상된다.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.912-916
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• 2001

Fluxmeter is a measuring instrument the magnetic flux intensity by means of an integration of the voltage induced to a search coil to unit time. It also is required to a precise integrator since the voltage induced to a search coil has a differential value of the flux ${\Phi}$ to unit time. In this study, a bias current which is a main problem of the integrator in a drift troublesome depending on the temperature of a FET is investigated. We have confirmed that the temperature dependence of both the bias current of a integrator using the FET and the reversal saturated current of the minor carrier in a P-N junction of a semiconductor were the same. The property of a commercial integrator goes rapidly down with increasing temperature. The bias current of a FET is increased twice as much with 10$^{\circ}C$ increment. As a result, the low drift integrator could be developed by setting the lower temperature up with a pottier device.