• Title/Summary/Keyword: Magnetic insulator

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Metal-Insulator Transition Induced by Short Range Magnetic Ordering in Mono-layered Manganite

  • Chi, E.O.;Kim, W.S.;Hong, C.S.;Hur, N.H.;Choi, Y.N.
    • Bulletin of the Korean Chemical Society
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    • v.24 no.5
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    • pp.573-578
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    • 2003
  • The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.

Fabrication of a SOI hall sensor using Si-wafer direct bonding technology and its characteristics (실리콘기판 직접접합기술을 이용한 SOI 홀 센서의 제작과 그 특성)

  • 정귀상
    • Electrical & Electronic Materials
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    • v.8 no.2
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    • pp.165-170
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    • 1995
  • This paper describes the fabrication and characteristics of a Si Hall sensor fabricated on a SOI (Si-on-insulator) structure. The SOI structure was formed by SDB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall sensor. The Hall voltage and sensitivity of the implemented SDB SOI Hall sensors showed good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall sensor was average 600V/A.T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10.mu.m. Moreover, this sensor can be used at high-temperature, high-radiation and in corrosive environments.

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A study on the fabrication of double rectangular spiral thin film inductor (Double rectangular spiral thin film inductor의 제조에 관한 연구)

  • 김충식;신동훈;정종한;남승의;김형준
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.461-464
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    • 1999
  • Planar type thin film inductors have a potential for the application of miniaturized DC-DC converters. For those high current applications, the magnetic film with high current capability is required. The current capability of magnetic films is mainly determined from high saturation magnetization (4$\piM_s$) as well as large anisotropy field $(H_k)$. We fabricated a double rectangular spiral thin film inductor which consist of magnetic layer, coil and insulator. Highest inductance values as well as best frequency characteristics can be obtained from 5 MHz and quality factor exhibit about 7.

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Properties and Structure of High Frequency Soft Magnetic Nano-composite Films

  • Ohnuma, Shigehiro;Masumoto, Hiroshi
    • Journal of Magnetics
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    • v.16 no.4
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    • pp.403-407
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    • 2011
  • Metal-insulator type, nano-granular soft magnetic films have been reviewed from the viewpoint of high frequency magnetic materials. The formation of nano-granular structure is related to the magnitude of heat of formation of intergranule materials. Variation of the ratio of granule phase to intergranule phase in the film is found to produce various characteristics in the magnetic properties of the film. The HRTEM observation reveals that neighboring granules in the film with above 60 at.% Co, contact at considerable points and the films show soft magnetic properties which are explainable in terms of the random anisotropy model for nano-crystalline materials. Addition of Ni group elements in Co-O based films enhances their anisotropy field up to 400 Oe and they exhibit excellent frequency response of permeability. Also, large electromagnetic noise suppression effect is demonstrated as one of their potential applications.

Synthesis and Characterization of Intergrowth Type Perovskite Oxide NdSr2MnCrO7

  • Singh, Devinder
    • Bulletin of the Korean Chemical Society
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    • v.32 no.8
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    • pp.2761-2764
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    • 2011
  • A new Ruddlesden-Popper phase $NdSr_2MnCrO_7$ has been prepared by the standard ceramic method. The powder X-ray diffraction studies suggest that the phase crystallizes with tetragonal unit cell in the space group I4/mmm. The electrical transport properties show that the phase is an electrical insulator and the electrical conduction in the phase occurs by a 3D variable range hopping mechanism. The magnetic studies suggest that the ferromagnetic interactions are dominant.

Magnetic Field annealing apparatus for Clamped Amorphous Transformer Core (주상 변압기용 비정질 코어의 자장인가 코일 제작)

  • Song, Jae-Sung;Jeong, Soon-Jong;Kim, Ki-Uk;Kim, Byung-Geol;Hwang, See-Dole;Jeong, Young-Ho
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.193-195
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    • 1996
  • In amorphous transformer core, magnetic field annealing is required for inducing uniaxial magnetic anisotropy to circular direction of the core. Generally annealing temperature is about foot, so insulator using in solenoid bed must have a high temperature stability, mechanical strength and good machinability. In this study, we made the magnetic field annealing apparatus using insulators, conductors, connectors and power supply. And then tested the apparatus in annealing process of 50 kVA amorphous transformers.

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Electronic Structures and Magnetic Properties of Fe/Si/Fe Trilayer

  • Park, Jin-Ho;Youn, Suk-Ju;Min, Byung-Il;Yi, Jae-Yel
    • Journal of Magnetics
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    • v.1 no.1
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    • pp.4-8
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    • 1996
  • Employing the LMTO band method, we have studied electronic and magnetic properties of Fe/Si/Fe trilayer in which the z-direction is chosen to be (111) direction of FeSi with B2 phase, We have also determined electronic structure of bulk FeSi, as a reference material. The ground state of FeSi is paramagnetic insulator with a band gap of 0.05 eV. Band structures of Fe/Si/Fe with varying the thickness of the spacer layer reveal that the spacer layer is metallic, and the states along the growth direction do not disperse much reflecting a two-dimensional nature. Magnetic moment of Fe atom in the interfacial layer of Fe/Si/Fe is reduced a lot as compared to the bulk value, suggesting a strong hybridization between Fe and Si states. The geometry of the Fermi surface indicates that the magnetic coupling period of ~8ML (monolayers) in Fe/Si/Fe is explained with a short Fermi wave vector of bcc Si.

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