• Journal of Magnetics
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• v.11 no.1
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• pp.16-19
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• 2006

$2-\mu{m}$ thick GaN epilayer was prepared, and 80 KeV $Co^{-}$ ions with a dose of $3X10^{16}\;cm^{-2}$ were implanted into GaN at $350^{\circ}C$. The implanted samples were post annealed at $700^{\circ}C$. We have investigated the magnetic and structural properties of Co ion-implanted GaN by various measurements. HRXRD results did not show any peaks associated with second phase formation and only the diffraction from the GaN layer and substrate structure were observed. SIMS profiles of Co implanted into GaN before and after annealing at $700^{\circ}C$ have shown a projected range of $\sim390\AA$ with 7.4% concentration and that there is little movement in Co. AFM measurement shows the form of surface craters for $700^{\circ}C$-annealed samples. The magnetization curve and temperature dependence of magnetization taken in zero-field-cooling (ZFC) and field-cooling (FC) conditions showed the features of superparamagnetic system in film. XPS measurement showed the metallic Co 2p core levels spectra for $700^{\circ}C$-annealed samples. From this, it could be explained that magnetic property of our films originated from Co magnetic clusters.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.250-255
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• 2000

Double rectangular spiral thin-film inductors were fabricated using $Fe_{86.7}Zr_{3.3}B_{4}Ag_{6}$ thin film with high permeability and resistance, in which easy axis of magnetization of the thin-film was perpendicular or parallel to the current direction. The perpendicular geometry inductor revealed higher inductance than the parallel geometry one, because spin aligns of magnetic film were more easily along the field direction due to higher field intensity in the perpendicular geometry. The increase of the inductance, however, resulted in the decrease of resonance frequency. The permeability was monitored by annealing the thin-films at different temperatures. With increasing the permeability, the inductance increased, but total resistance also increased due to the increase in magnetic core loss. As the resonance frequency was higher in air-core inductor than in magnetic thin-film core inductor, it is suggested to increase the resonance frequency that the characteristic of air-core inductor rather than the magnetic properties of the thin-film should be enhanced..

• Journal of Magnetics
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• v.1 no.1
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• pp.42-45
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• 1996

We have studied the superconductivity of rapidly quenched $YPd_2B_2C$ ribbons. The superconductivity in bulk $YPd_2B_2C$ is completely suppressed by annealing as-cast ingots at hihger temperature, suggesting that the superconducting phase is metastable. The rapidly quenched sample, in the as-quenched state, shows the superconducting transition temperature of about 21 K. Form our magnetic data, the value for the upper critical field $H_c2$ (0) is estimated to be 10 T. The critical current density and the expected specific heat discontinuity $({\Delta}C/{\gamma}{T_c})$ were obtained to be about$10^8A/m^2$ at 10 Oe and 1.55, respectively.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of Magnetics
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• v.7 no.3
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• pp.72-79
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• 2002

Local M-H loops have been measured on the free layer of a tunneling magnetoresistance (TMR) junction using the magneto-optical Kerr effect (MOKE) system, with an optical beam size of about 2 $\mu$m diameter. Tunnel junctions were deposited using the DC magnetron sputtering method in a chamber with a base pressure of 3$\times$10$^{-9}$ Torr. The relatively irregular variations of coercive force H$_c$(∼17.5 Oe) and unidirectional anisotropy field H$_{ua}$(∼7.5 Oe) in the as-deposited sample are revealed. After $200{^{\circ}C}$ annealing, He decreases to 15 Oe but H$_{ua}$ increases to 20 Oe with smooth local variations. Two-dimensional plots of H$_c$ and H$_{ua}$ show the symmetric saddle shapes with their axes aligned with the pinned layer, irrespective of the annealing field angle. This is thought to be caused by geometric effects during deposition, together with a minor annealing effect. In addition, the variation of root mean square (RMS) surface roughness reveals it to be symmetric with respect to the center of the pinned-layer axis, with the roughness of 2.5 $\AA$ near the edge and 5.8 $\AA$ at the junction center. Comparison of surface roughness with the variation of H$_{ua}$ suggests that the H$_{ua}$ variation of the free layer is well described by dipole interactions related to surface roughness. As a whole, the reversal magnetization is not uniform over the entire junction area and the macroscopic properties are governed by the average sum of local distributions.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.237-245
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• 2000

Effects of B addition and heat treatment on the magnetic and magnetostrictive properties of amorphous SmFe$_2$ thin films are investigated. A significant improvement in the magnetostrictive properties at low magnetic fields is observed with the addition of B. This improvement, however, is achieved at a heavy cost of intrinsic properties such as saturation magnetostriction. For example, at a magnetic field of 30 Oe, magnetostriction of a thin film with a B content of 9.9 at.% is increased from 190 to 333 ppm, but saturation magnetostriction is decreased by more than 50 %. This result is in accord with the deterioration (reduction) of saturation magnetization and the improvement (reduction) of coercive force at this B content. The magnetostrictive properties are also improved by annealing and optimum annealing temperature is found to be in the range 300-400 $^{\circ}C$. The main reason for the improvement is mainly considered to be due to the reduction of coercive force caused by stress relief, not due to the ultrafine SmFe$_2$ precipitates which were originally expected to form by annealing.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.323-326
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• 1999

This paper describes a point matching method that is based on an expansion of the electromagnetic field in terms of a series of Bessel and modified Bessel functions multiplied by trigonometric functions. In this method, the electric and magnetic fields inside the waveguide core are matched to those outside the core at matching points on the boundary to yield matrix equations. As an example applying this method, the paper presents the results of the computation in the form of curves of the propagation constants in a semicircular optical waveguide, be formed by annealing for reduced insertion(radiation) loss when connected to optical fiber. The propagation curves are presented in a form of refractive index independent. Also, it presents relative energy distributions between inside the core and outside the core of various modes and presents field distributions.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.23-34
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• 1992

In order to fabricate magnetoresistive sensor, Fe-Ni and Co-Ni alleys were evaporated on the slide glass and the silicon wafers. Saturation magnetic induction($B_{s}$), coercive field strength($H_{c}$) and magnetoresistance were measured for fabricated samples. The evaporated Fe-Ni thin films show that the saturation magnetic induction was 0.65 T, and coercive field strength was 0.379 A/cm, and this value was changed to 0.370 A/cm(//), 0.390 A/cm(${\bot}$), respectively after magnetic annealing. For the measurement of coercive field strength, magnetizing frequency of 1 kHz was used. For the fabricated sensor element, the change of magnetoresistance (${\Delta}R/R$) was excessively unstable due to oxidation in the process of fabrication. The evaporated Co-Ni alloy thin films show that saturation magnetic induction was 0.66 T, and coercive field strengthes were 5.895 A/cm(//), 5.898 A/cm(${\bot}$), respectively, after magnetic annelaing. The change of magnetoresistance(${\Delta}R/R$) was $3.6{\sim}3.7%$ of which value was excessively stable to room temperature. Fe-Ni thin film could have many problems due to large affinity in the process of fabrication of magnetoresistance sensor, but Co-Ni thin film could be a suitable material for fabrication of magnetoresistance sensor, because of its small affinity and definite magnetoresistance effects.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.57-62
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• 2011

We have studied the electrical and magnetic transport properties of tunneling device with FePt magnetic quantum dots. The FePt nanoparticles with a diameter of 8~15 nm were embedded in a $SiO_2$ layer through thermal annealing process at temperature of $800^{\circ}C$ in $N_2$ gas ambient. The electrical properties of the tunneling device were characterized by current-voltage (I-V) measurements under the perpendicular magnetic fields at various temperatures. The nonlinear I-V curves appeared at 20 K, and then it was explained as a conductance blockade by the electron hopping model and tunneling effect through the quantum dots. It was measured also that the negative magneto-resistance ratio increased about 26.2% as increasing external magnetic field up to 9,000 G without regard for an applied electric voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.7
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• pp.639-647
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• 2009

In this work, wrapping conductors with thin magnetic materials is proposed as a magnetic shielding method. The 0.1 mm thick metal sheets of mu-metal, grain-oriented electrical steel, and non-oriented electrical steel were produced from commercial alloy sheets through cold rolling and followed high temperature annealing. In case of 3-phase electric currents, mu-metal was the best in shielding performance at a B-field magnitude of about 100 ${\mu}T$, whereas silicon steels were better than mu-metal at a B-magnitude over 500 ${\mu}T$. In addition, wrapping with silicon steel(inner) together with mu-metal(outer) resulted in a shielding factor less than 0.1 even at 500 ${\mu}T$. These results are due to changes in hierarchy of magnetic permeabilities of the materials with increasing magnetic field strength. In case of single-phase electric current, B-magnitude outside the magnetic shell was rather increased compared to the unshielded case. This result is explained by vector composition of B-fields near magnetic shielding materials.