• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1866-1868
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• 2004

This paper deals with the device for measuring the time-varying magnetic fields and induced voltages caused by lightning discharges. The system consists of two loop antennas for the measuring the magnetic flux density and induced voltages caused by the lightning current, an integrator a data acquisition and a personal computer with a software package that was developed for the analysis of the measurements.

• Journal of Magnetics
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• v.7 no.3
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.9-14
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• 1996

We have fabricated the vacuum magnetic sensor with a lateral field emitter arrays constructed on n-Si substrate, and investigated its magnetic characteristics. The device consists of 100 field-emitter tips with a $10{\mu}m$ pitch, gate, and split-anodes which are laterally structured. The electron-emission characteristics from the emitter followed the Fowler-Nordheim tunnelling theory. The sensor has good linear characteristics and high sensitivity of 825 %/T.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.82-87
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• 2007

A Halbach array is a special arrangement of permanent magnets which augments the magnetic field on one side of the device while cancelling the field to near zero on the other side. The application of this Halbach array magnet to the electrodynamic suspension for Maglev train has been recently studied in order to increase the levitation capability. This paper is focused on analytical method of the magnetic levitation system using Halbach array magnet. The suitability of the proposed method is verified with comparing to a finite element method. From this study, it is confirmed that the proposed method provides a reasonable solution with a little analysis time to the finite element method and the magnetic levitation system using Halbach array magnet is stable dynamically.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details If the operating principle and secondary effects, and through the application If ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.623_624
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• 2009

This paper deals with the characteristic analysis of electro-magnet (EM)-permanent magnet (PM) hybrid levitation and propulsion device for magnetically levitated (maglev) vehicles. Several machine characteristics such as levitation force with/without control current and thrust are described. In order to verify the analysis results and feasibility of high-speed operation of the maglev vehicle, real-scale static test set is implemented and tested.

• Journal of Electrical Engineering and Technology
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• v.3 no.1
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• pp.1-7
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• 2008

Superconducting Magnetic Energy Storage (SMES) can inject or absorb real and reactive power to or from a power system at a very fast rate on a repetitive basis. These characteristics make the application of SMES ideal for transmission grid control and stability enhancement. The purpose of this paper is to introduce the SMES model and scheme to control the active and reactive power through the power electronic device. Furthermore, an optimal priority scheme is proposed for the combination of active and reactive power control to be able to stabilize power transient swings.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1991.10a
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• pp.45-47
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• 1991

In this research, we verify the relations between the mechanical hardness of a strip and the output of Residual Magnetic Flux Detector, which is installed in the end side of #2 CAL. First, we install the strip speed detector and get a hardness signal and a speed signal 2 seconds, and then do signal processing and send an output to a printer every 30 seconds. The system that performs above functions is Magnetic Hardness Data Acquisition & Processing System. We got the relation between output current and hardness for the strip of T3 BP through on-line tests. Seconds, we made a hardness Measurement Simulator and observed the speed characteristics of residual magnetic flux, with using it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• Progress in Superconductivity and Cryogenics
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• v.7 no.4
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• pp.10-13
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• 2005

Transport current and magnetic field which is generated by transport current make AC current - AC mag-netic field condition(AC-AC condition) in AC power application system using HTS tape. Therefore, characteristics of AC loss under the AC-AC condition are necessary to estimate AC loss of power device with accuracy such as HTS transformer. In this paper, we researched transport current loss, magnetization loss by perpendicular magnetic field and total loss which is represented as summation of both losses under the AC-AC condition in single HTS tape. As a result, magnetization loss showed increasing behavior under 65mT and decreasing behavior upper 65mT by influence of transport current. Transport current loss was increased continuously through out whole measurement ranges in the AC-AC condition. Total loss in HTS tape was dominated entirely by magnetization loss.