• 동력기계공학회지
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• 제3권1호
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• pp.60-66
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• 1999

Most of the small-type fishing boats in this country don't have the autopilot system such as the large ships have. In this papers, we describes on the development of electro magnetic compass for the autopilot system of the small-type fishing boat, which is utilized the MR(magnetic resistance) device and the inclination sensor. And we investigated the validity of the developed electro magnetic compass through results of actual experiment.

• Journal of Magnetics
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• 제19권2호
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• pp.197-204
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• 2014

A transcranial magnetic stimulation device is a complicated appliance that employs a switching power device designed for discharging and charging a capacitor to more than 1 kV. For a simple transcranial magnetic stimulation device, this study used commercial power and controlled the firing angle using a Triac power device. AC 220V 60 Hz, the power device was used directly on the tanscranial magnetic stimulation device. The power supply device does not require a current limiting resistance in the rectifying device, energy storage capacitor or discharge circuit. To control the output power of the tanscranial magnetic stimulation device, the pulse repetition rate was regulated at 60 Hz. The change trigger of the Triac gate could be varied from $45^{\circ}$ to $135^{\circ}$. The AVR 182 (Zero Cross Detector) Chip and AVR one chip microprocessor could control the gate signal of the Triac precisely. The stimulation frequency of 50 Hz could be implemented when the initial charging voltage Vi was 1,000 V. The amplitude, pulse duration, frequency stimulation, train duration and power consumption was 0.1-2.2T, $250{\sim}300{\mu}s$, 0.1-60 Hz, 1-100 Sec and < 1 kW, respectively. Based on the results of this study, TMS can be an effective method of treating dysfunction and improving function of brain cells in brain damage caused by ischemia.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.283-284
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• 2008

The magnetic flux is generated by a vortex current which circulates around the vortex with a sense of rotation opposite to that of the diamagnetic screening surface current. When the external magnetic field was applied to the superconductor magnetometer, some regions of the magnetic sensor will be destroyed, especially the weak link regions and the defect regions. The destroyed regions will be increased with the increasing of the magnetic flux.

• 한국자기학회지
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• 제24권4호
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• pp.101-106
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• 2014

Dc 마그네트론 스퍼터링법으로 자기저항비 5.0 %와 자장감응도 1.5 %/Oe를 갖는 glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) 다층구조 GMR-SV 박막을 증착하였다. 광 리소그래피 공정으로 적혈구 직경 크기인 $7{\mu}m{\sim}8{\mu}m$ 이내의 선폭인 GMR-SV 소자를 제작하였다. 직경 $1{\mu}m$ 크기인 여러 개의 자성비드가 결합된 적혈구를 자기저항비 1.06 % 자장감응도 0.3 %/Oe를 갖는 GMR-SV 소자에 떨어뜨려 -0.6 Oe 부근에서 약 $0.4{\Omega}$과 약 0.15 %의 변화를 관찰하였다. 본 연구로부터 미크론 크기의 선폭을 갖는 GMR-SV 소자가 자성비드를 결합한 적혈구내 헤모글로빈의 새로운 자성 특성을 분석하는 바이오센서로 활용할 수 있음을 보여주었다.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2023년도 봄 학술논문 발표대회
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• pp.147-148
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• 2023

Steel doors, which are common in general buildings, do not seal the gap between the door and the floor, so drafts, noise, dust, and lights flow from the outside, and shielding devices are installed in various materials and methods, such as adding magnetic gate paper to the side of the door or installing a gasket under the door, but performance is limited. Accordingly, in order to fundamentally solve these problems, we researched and developed a double gap blocking device that can improve fire resistance and airtightness performance in steel doors. Unlike general products, the double gap blocking device has the advantage of maximizing airtight performance by forming an air layer in the center when the door is closed, as well as greatly improving the fire resistance performance, which is the basic performance of the fire door.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.76-77
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• 2002

최근 거대자기저항(Giant magneto resistance)과 성질상으로 닮고 spin-valve와 같은 작용을 하는 ferromagnet(FM)/semiconductor, magnetic semiconductor(MS)/semiconductor 등의 다층막이 만들어지고 있으며, 비자성반도체에 spin-injection을 통한 spin-dependent electronic devices의 제작을 위한 연구가 활발히 진행중이다. 이처럼 III-FM-V, II-FM-Ⅵ, IV-FM 구조의 자성반도체(Magnetic semiconductor)에 대한 연구는 자기적 요소에 기반을 둔 반도체로의 적용가능성을 보임으로 많은 주목을 끌고 있다. 우리가 선택한 MnGe이 다른 자성반도체에 대해 상대적으로 가지는 이점은 다음과 같다. (중략)