• Title/Summary/Keyword: Magnetic Materials

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Effect of Magnetic Property Modification on Current-Induced Magnetization Switching with Perpendicular Magnetic Layers and Polarization-Enhancement Layers

  • Kim, Woo-Jin;Lee, Kyung-Jin;Lee, Taek-Dong
    • Journal of Magnetics
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    • v.14 no.3
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    • pp.104-107
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    • 2009
  • The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

Magnetically Soft Nanomaterials Obtained by Devitrification of Metallic Glasses

  • Kulik, Tadeusz;Ferenc, Jaroslaw;Kowalczyk, Maciej;Xiubing, Liang;Nedelko, Natalya
    • Journal of Magnetics
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    • v.9 no.2
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    • pp.65-68
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    • 2004
  • Magnetically soft nanomaterials obtained by controlled crystallisation of metallic glasses are the newest group of materials for inductive components. In particular, research is carried out in the field of alloys for high temperature applications. This kind of materials must meet two basic requirements: good magnetic properties and stability of properties and structure. In the present work the magnetic properties and structure of Fe-Co-Hf-Zr-Cu-B (HIDTPERM-type) alloys were investigated, as well as their stability. Differential thermal analysis, (DTA), X-ray diffractometry (XRD), transmission electron microscopy (TEM), magnetometry (VSM) and quasistatic hysteresis loop recording were used to characterise structure and properties of the alloys investigated. Optimisation against properties and their stability was performed, resulting in formulation of chemical composition of the optimum alloy, as well as its heat treatment.

F.E.M for Analysis of Magnetic Circuits with thin Magnetic Materials (얇은 자성체를 갖는 자기회로의 자장해석을 위한 유한요소법)

  • Kim, Kwon-Sik;Lee, Joon-Ho;Lee, Ki-Sik;Lee, Bok-Yong
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.573-576
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    • 1992
  • This paper presents a method, which couples the boundary integral terms in the thin magnetic materials with standard FEM used to analyze the rest of it, for analyzing the magnetic fields. The proposed method retains the sparsity and symmetry of the final system matrix, the merits of standard FEM and eliminates the need for fininte elements in the thin magnetic materials, thereby reducing necessary capacity of computer memory and computing time. To verify the usefulness of the proposed alogorithmn, an examples, coil with source currents and thin magnetic materials, is chosen and analyzed. the results are compared with those of the standard FEM by coarse mesh and the proposed method, using standard FEM by fine mesh as a reference.

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Dynamic Magneto-mechanical Behavior of Magnetization-graded Ferromagnetic Materials

  • Chen, Lei;Wang, Yao
    • Journal of Magnetics
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    • v.19 no.3
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    • pp.215-220
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    • 2014
  • This study investigates the dynamic magneto-mechanical behavior of magnetization-graded ferromagnetic materials Terfenol-D/FeCuNbSiB (MF). We measure the dynamic magneto-mechanical properties as a function of the DC bias magnetic field ($H_{dc}$). Our experimental results show that these dynamic magneto-mechanical properties are strongly dependent on the DC bias magnetic field. Furthermore, the dynamic strain coefficient, electromechanical resonance frequency, Young's moduli, and mechanical quality factor of Terfenol-D/FeCuNbSiB are greater than those of Terfenol-D under a lower DC bias magnetic field. The dynamic strain coefficient increases by a factor of between one and three, under the same DC bias magnetic field. In particular, the dynamic strain coefficient of Terfenol-D/FeCuNbSiB at zero bias achieves 48.6 nm/A, which is about 3.05 times larger than that of Terfenol-D. These good performances indicate that magnetization-graded ferromagnetic materials show promise for application in magnetic sensors.

Influence of Working Pressure on The Magnetic Properties of Tb(Fe0.55Co0.45)1.5 Thin Films

  • Tu, Le Tuan;Duc, Nguyen Huu;Jeong, Jong-Ryul;Kim, Cheol-Gi
    • Journal of Magnetics
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    • v.13 no.4
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    • pp.160-162
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    • 2008
  • In this work the magnetic anisotropies of magnetostriction material $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ (named a-TerfecoHan) films were investigated with respect to working pressures in the range 1-7 mTorr. The results obtained show that perpendicular magnetic anisotropy (PMA) can be obtained at a working pressure above 5.1 mTorr. XRD was utilized to clarify the origin of the PMA observed in $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ films, and revealed that all samples were amorphous. Therefore, we propose that the PMA effect is explained by stress produced in film due to internal relaxation process and magnetic anisotropy enhancements caused by magnetoelastic interactions.

Magnetic-vortex Dynamic Quasi-crystal Formation in Soft Magnetic Nano-disks

  • Kim, Junhoe;Kim, Sang-Koog
    • Journal of Magnetics
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    • v.22 no.1
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    • pp.29-33
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    • 2017
  • We report a micromagnetic numerical study on different quasi-crystal formations of magnetic vortices in a rich variety of dynamic transient states in soft magnetic nano-disks. Only the application of spin-polarized dc currents to a single magnetic vortex leads to the formation of topological-soliton quasi-crystals composed of different configurations of skyrmions with positive and negative half-integer numbers (magnetic vortices and antivortices). Such topological object formations in soft magnets, not only in the absence of Dzyaloshinskii-Moriya interaction but also without magnetocrystalline anisotropy, are discussed in terms of two different topological charges, the winding number and the skyrmion number. This work offers an insight into the dynamic topological-spin-texture quasi-crystal formations in soft magnets.

Influence of Cooling Condition of Casted Strips on Magnetic Properties of Nd-Fe-B Sintered Magnets

  • Jung, Hwaebong;Kim, Sumin;Moon, Hongjae;Oh, Yoon S.;Lee, Young-Joo;Lee, Hyun-Sook;Lee, Wooyoung
    • Metals and materials international
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    • v.24 no.6
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    • pp.1422-1431
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    • 2018
  • We investigated the additional (secondary) cooling effect of casted strips on the magnetic properties of Nd-Fe-B sintered magnets. The Nd-Fe-B sintered magnets were fabricated with the casted strips prepared without and with additional cooling. Additional cooling was achieved by blowing Ar gas at various pressures (0.1, 0.3, and 0.6 MPa) on the free-side surface of the strips during the strip-casting process. The higher magnetic properties of $H_c$, $B_r$, and $(BH)_{max}$ of the final Nd-Fe-B sintered magnets were obtained for 0.1 MPa rather than for 0.0 MPa. The best microstructure of the columnar grains in the casted strips was produced with the aid of a lower pressure of gas on the free-side surface. It was found that the microstructure of the strips affects the distribution of grains grown in the sintered magnets. This report demonstrates that the improved magnetic performance of Nd-Fe-B sintered magnets was achieved via additional gas cooling.

Alternating Magnetic Field Crystallization of Amorphous Si Films

  • Kang, K.H.;Park, S.H.;Lee, S.J.;Nam, S.E.;Kim, H.J.
    • Journal of Information Display
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    • v.4 no.1
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    • pp.34-37
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    • 2003
  • We investigate the solid phase crystallization of amorphous Si films on glass substrates under alternating magnetic field induction. The kinetics of crystallization are found to be greatly enhanced by alternating magnetic field. While complete crystallization takes heat treatment of more than 14 hours at 570$^{\circ}C$, it can be reduced by applying the megnetic field to 20 minutes. It is assumed that the enhancement of crystallization is associated with an electromotive force voltage generated by alternating magnetic field. This electric field applied in the amorphous Si may possibly be the reason for acceleration of the atomic mobility of crystallization through the modification of atomic potentials