• Journal of Magnetics
• /
• v.9 no.4
• /
• pp.116-120
• /
• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• Journal of Magnetics
• /
• v.18 no.4
• /
• pp.386-390
• /
• 2013

This paper studies the effects of A-site substitution by barium on the magnetic and magnetocaloric properties of $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ (x = 0, 0.04, 0.08 and 0.1). The tetragonal crystal structures of the samples are confirmed by room temperature X-ray diffraction. The dependence of the Curie temperature ($T_C$) and the magnetic entropy change (${\Delta}S_M$) on the Ba doping content has been investigated. The samples of all doping contents undergo the second order phase transition. As the concentration of Ba increased, the maximum entropy change ($|{\Delta}S_M|_{max}$) increased gradually, from 1.15 J $kg^{-1}$ $K^{-1}$ (x = 0) to 1.36 J $kg^{-1}$ $K^{-1}$ (x = 0.1), in a magnetic field change of 1.5 T. The measured value of $T_C$ is 265 K, 275 K, 260 K and 250 K for x = 0, 0.04, 0.08 and 0.1, respectively. If combining these samples for magnetic refrigeration, the temperature range of ~220 K and 290 K, where |${\Delta}S_M$|max is stable at ~1.27 J $kg^{-1}$ $K^{-1}$ and RCP = 88.9 $J{\cdot}kg^{-1}$ for ${\Delta}H$ = 1.5 T. $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ compounds, are expected to be suitable for magnetic-refrigeration application due to these magnetic properties.

• Nuclear Engineering and Technology
• /
• v.51 no.5
• /
• pp.1373-1380
• /
• 2019

Besides promising implications as fertile nuclear materials, thorium carbonitrides are of great interest owing to their peculiar physical and chemical properties, such as high density, high melting point, good thermal conductivity. This paper reports first-principles simulation results on the structural, electronic and magnetic properties of cubic thorium carbonitrides $ThC_xN_{(1-x)}$ (X = 0.03125, 0.0625, 0.09375, 0.125, 0.15625) employing formalism of density-functional-theory. For the simulation of physical properties, we incorporated full-potential linearized augmented plane-wave (FPLAPW) method while the exchange-correlation potential terms in Kohn-Sham Equation (KSE) are treated within Generalized-Gradient-Approximation (GGA) in conjunction with Perdew-Bruke-Ernzerhof (PBE) correction. The structural parameters were calculated by fitting total energy into the Murnaghan's equation of state. The lattice constants, bulk moduli, total energy, electronic band structure and spin magnetic moments of the compounds show dependence on the C/N concentration ratio. The electronic and magnetic properties have revealed non-magnetic but metallic character of the compounds. The main contribution to density of states at the Fermi level stems from the comparable spectral intensity of Th (6d+5f) and (C+N) 2p states. In comparison with spin magnetic moments of ThSb and ThBi calculated earlier with LDA+U approach, we observed an enhancement in the spin magnetic moments after carbon-doping into ThN monopnictide.

• Korean Journal of Materials Research
• /
• v.14 no.8
• /
• pp.595-599
• /
• 2004

We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.2
• /
• pp.190-195
• /
• 2009

Thin-gauged 3% silicon steel sheets having a highly grain-oriented texture have been developed as a core material for applications of middle-frequency (400 Hz ${\sim}$ 10 kHz) devices. The newly developed sheets with a tension coating showed an excellent reduction in iron loss at 400 Hz (iron loss at 1.0 T and 400 Hz = 4.677 W/kg, iron loss at 1.5 T and 400 Hz = 9.742 W/kg) due to high magnetic induction, $B_{10}$(measured induction at 1000 A/m), of over 1.9 T. In cases of frequencies below 400 Hz, magnetic induction, $B_{10}$, of the sample plays a major role to reduce its iron loss as excitation induction increases, whereas, in case of frequency of 1 kHz, thickness dependence becomes dominant due to a lower iron loss at relatively thinner sample. The sheets with a high magnetic induction, therefore, are favorable for high excitation induction (over 1.0 T) and low excitation frequency (below 400 Hz) applications, whereas the sheets that can reduce eddy current loss by reducing thickness or domain wall width are advantageous for low excitation induction (below 1.0 T) and high excitation frequency (around 1 kHz) applications.

• Structural Engineering and Mechanics
• /
• v.17 no.3_4
• /
• pp.291-302
• /
• 2004

In this paper, load monitoring technologies using U-shape Magnetoelastic (EM or ME) sensors have been exploited systemically for the first time. The steel rod to be tested is the Japan 7 mm piano steel rod. The load dependence of the magnetic properties of the piano steel rod was manifested. Two experimental designs of U-shape magnetoelastic sensors were introduced, one with double pick-up concentric coils wound on the rod to be tested, the other with pick-up coil on one yoke foot. The former design is used to derive the correlation of the relative permeability with elastic tension, while the latter is aimed to reflect the stress induced magnetic flux variation along the magnetic circuit. Magnetostatic simulations provide interpretations for the yoke foot sensing technology. Tests with double pick-up coils indicate that under proper working points (primary voltages), the relative permeability varies linearly with the axial load for the Japan 7 mm piano steel rod. Tests with pick-up coil on the yoke foot show that the integrated sensing voltage changes quadratically with the load, and error is more acceptable when the working point is high enough.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1447-1449
• /
• 1998

The c-axis orientation plays a very important role in controlling the main parameters of the perpendicular magnetic recording media, such as perepndicular magnetic anisotropy field $H_{K{\bot}}$, the ratio of coercive force $H_{C{\bot}}/H_{C//}$, the recording density $D_{50}$, and the dispersion of the c-axis orientation $\Delta\theta_{50}$, which is quite important for the performance as perpendicular recording media, as well as the magnetic properties of the film. In this study, the essential process requirement for preparing the Co-Cr films with the superior c-axis orientation, the dependence of $\Delta\theta_{50}$ and the magnetic properties on the film thickness $\delta$, and the effect of underlayer on the dispersion of c-axis orientation have been investigated for both the FTS and DCM system.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2012.11a
• /
• pp.172-172
• /
• 2012

A Pt-skin $Pt_3Ni$(111) surface was reported to show high catalytic activity. In this study, we investigated the magnetic properties and electronic structures of the various oriented surfaces of bulk-terminated and Pt-segregated $Pt_3Ni$ by using a first-principles calculation method. The magnetic moments of Pt and Ni are appreciably enhanced at the bulk-terminated surfaces compared to the corresponding bulk values, whereas the magnetic moment of Pt on the Pt-segregated $Pt_3Ni$(111) surface is just slightly enhanced because of the reduced number of Ni neighboring atoms. Spin-decomposed density of states shows that the dz2 orbital plays a dominant role in determining the magnetic moments of Pt atoms in the different orientations. The lowering of the d-band center energy (-2.22 eV to -2.46 eV to -2.51 eV to -2.65 eV) in the sequence of bulk-terminated (100), (110), (111), and Pt-segregated (111) may explain the observed dependence of catalytic activity on surface orientation. Our d-band center calculation suggests that an observed enhanced catalytic activity of a $Pt_3Ni$(111) surface originates from the Pt-segregation.

• Journal of Magnetics
• /
• v.8 no.1
• /
• pp.24-31
• /
• 2003

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant Magneto Resistance by Fert and Grunberg and a large tunneling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on an external magnetic field can be found. We will briefly address important basic properties of these junctions like thermal, magnetic and dielectric stability and discuss scaling issues down to junction sizes below 0.01 $\mu\textrm{m}$$^2$with respect to single domain behavior, switching properties and edge coupling effects. The second part will give an overview on applications beyond the use of the tunneling elements as storage cells in MRAMs. This concerns mainly field programmable logic circuits, where we demonstrate the clocked operation of a programmed AND gate. The second 'unconventional' feature is the use as sensing elements in DNA or protein biochips, where molecules marked magnetically with commercial beads can be detected via the dipole stray field in a highly sensitive and relatively simple way.

• Journal of Magnetics
• /
• v.6 no.4
• /
• pp.132-141
• /
• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.