• 제목/요약/키워드: Magnetic Barrier

검색결과 163건 처리시간 0.026초

Rapid Progression of Early Delayed Radiation Effect in Pleomorphic Xanthoastrocytoma

  • Park, Kyung-Jae;Kang, Shin-Hyuk;Lee, Hoon-Kap;Chung, Yong-Gu
    • Journal of Korean Neurosurgical Society
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    • 제46권6호
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    • pp.564-567
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    • 2009
  • Early delayed radiation effects are known to occur within several months after completing radiotherapy for brain tumors. We present marked changes of magnetic resonance imaging (MRI) scan that occurred one month after radiotherapy in a patient with a pleomorphic xanthoastrocytoma, which was eventually diagnosed as an early delayed radiation effect. Such an early development of dramatic MRI change has not been reported in patients treated with radiotherapy for pleomorphic xanthoastrocytomas.

Optimal Rotor Shape Design of Asymmetrical Multi-Layer IPM Motors to Improve Torque Performance Considering Irreversible Demagnetization

  • Mirazimi, M.S.;Kiyoumarsi, A.;Madani, Sayed M.
    • Journal of Electrical Engineering and Technology
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    • 제12권5호
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    • pp.1980-1990
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    • 2017
  • A study on the multi-objective optimization of Interior Permanent-Magnet Synchronous Motors (IPMSMs) with 2, 3, 4 and 5 flux barriers per magnetic pole, based on Genetic Algorithm (GA) is presented by considering the aspect of irreversible demagnetization. Applying the 2004 Toyota Prius single-layer IPMSM as the reference machine, the asymmetrical two-, three-, four- and five-layer rotor models with the same amount of Permanent-Magnets (PMs) is presented to improve the torque characteristics, i.e., reducing the torque pulsation and increasing the average torque. A reduction of the torque pulsations is achieved by adopting different and asymmetrical flux barrier geometries in each magnetic pole of the rotor topology. The demagnetization performance in the PMs is considered as well as the motor performance; and analyzed by using finite element method (FEM) for verification of the optimal solutions.

Characterization of Internal Reorientation of Methyl Group in 2,6-Dichlorotoluene

  • Nam-Goong, Hyun;Rho, Jung-Rae
    • 한국자기공명학회논문지
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    • 제13권1호
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    • pp.35-55
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    • 2009
  • The two correlation times previously obtained in our coupled $^{13}C$ relaxation measurement for the methyl group in 2,6-dichlorotoluene may be used as a criterion for evaluating the reorientation dynamics of an internal rotor. We numerically tested an extended diffusion model and the Smoluchowski diffusion equation to see how the rotational inertial effect and jump character contribute to the internal correlation time ratio of the internal rotor. We also analytically solved the general jump model with three different rate constants in a sixfold symmetric potential barrier. By assuming that the internal rotation of the methyl group in 2,6-dichlorotoluene can be described in terms of jumps among sixfold harmonic potential wells, we can conclude that the jump model satisfactorily reproduce the experimental data and the rate for sixfold jump is at least 1.53 times as great as that of a threefold jump.

알루미나와 이트리아가 질화규소의 가공성에 미치는 영향 (Effect of $Al_2O_3$ and $Y_2O_3$ on Machining of Silicon itride)

  • 이수완;장태석;엄호성
    • 한국세라믹학회지
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    • 제33권3호
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    • pp.269-276
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    • 1996
  • The effect of sintering aids on the sinterability for silcion nitride has been studied by hundreds workers. However the effect of sintering aids on the machinability as the own trobles which is the major barrier for the field applications of the ceramic components has not been fully studied. in this study the contents of Al2O3 and Y2O3 in silicon nitride were varied from 0 to 8 wt% respectively. The physical and mechanical properties of the silcion nitride were measured. The optimal microstructure of silicon nitride balls with the excellent machinability by adding with various contents of sintering aids was studied by MGF(magnetic-fluid grinding)technique. An attempt to figure out how the mechanical properties influence the machinability of silicon-nitride ball was made.

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1kW급 리럭턴스 동기 전동기의 특성해석 (A characteristic analysis of the 1kW Reluctance Synchronous Motor)

  • 최경호;김남훈;백원식;김동희;황돈하;김민회
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.119-122
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    • 2002
  • This paper presents detailed characteristic of a Reluctance Synchronous Motor(RSM) which has a transverse-laminated rotor. First of all, the analysis of a magnetic circuit field between stator and rotor should be achieved in order to predict the performance characteristic of the RSM. For the analysis of a magnetic circuit field, the Finite Element(FE) analysis and a experimental method are used. The analytical result of the inductance flux distribution, vector potential, and the output shows some good characteristic along with the load condition.

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Ideal structure for tunneling magnetoresistance and spin injection into semiconductros: Ni(111)/BN/Co(111)

  • Arqum, Hashmi;Son, Jicheol;Hong, Jisang
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2013년도 자성 및 자성재료 국제학술대회
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    • pp.32-32
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    • 2013
  • Using the Vienna ab initio simulation package (VASP) incorporating van der Waals interaction, we have explored structural, adsorption, and magnetic properties of Ni(111)/BN/Co(111) systems. We have found that both Ni(111) and Co(111) layers shows half metallic state, while the spacer BN layer becomes weak metal for one monolayer (ML) thickness and an insulating barrier for two ML thickness. The half metallic states in both Ni(111) and Co(111) layers are robust because it is unchanged independently on the magnetic coupling of Ni(111) and Co(111). This finding suggests that the Ni(111)/BN/Co(111) systems can be utilized for perfect tunneling magnetoresistance system. Moreover, it can be applied for potential spin injecting into semiconductor in FM/semiconductor system due to the fact that the half metallic state in FM layers at the interface will be unchanged.

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Abnormal Temperature Dependence of Tunneling Magnetoresistance for Magnetic Tunnel Junctions

  • Lee, K.I.;Lee, J.H.;Lee, W.Y.;Rhie, K.;Lee, B.C.;Shin, K.H.
    • Journal of Magnetics
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    • 제7권2호
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    • pp.59-62
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    • 2002
  • Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

Analysis of Cogging Torque in Interior Permanent Magnet Motor by Analytical Method

  • Kang, Gyu-Hong;Hong, Jung-Pyo;Kim, Gyu-Tak
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제11B권2호
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    • pp.1-8
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    • 2001
  • This paper deals with magnetic field analysis and computation of cogging torque using an analytical method in Interior Permanent Magnet Motor (IPMM). The magnetic field is analyzed by solving space harmonics field analysis due to magnetizing and the cogging torque is analyzed by combining field analysis with relative permeance. In reducing cogging torque, the inferences of various design variable and magnetizing distribution are investigated. It is shown that the slot and pole ratio (the pole-arc / pole-pitch ratio) combination has a significant effect on the cogging torque and presents a optimal flux barrier shape to reduce the cogging torque. The validity of the proposed technique is confirmed with 2-D Finite Element(FE) analysis.

HBr 가스를 이용한 MgO 박막의 고밀도 반응성 이온 식각

  • 김은호;소우빈;공선미;정지원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.212-212
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    • 2010
  • 최근 차세대 반도체 메모리 소자로 대두된 magnetic random access memory(MRAM)에 대한 연구가 활발히 진행되고 있다. 특히 MRAM의 magnetic tunnel junction(MTJ) stack을 구성하는 자성 재료의 건식 식각에 대한 연구에서는 좋은 profile을 얻고, 재층착의 문제를 해결하기 위한 노력이 계속해서 진행되고 있다. 본 연구에서는 photoresist(PR)과 Ti 하드 마스크로 패턴 된 배리어(barrier) 층인 MgO 박막의 식각 특성을 유도결합 플라즈마를 이용한 고밀도 반응성 이온 식각(inductively coupled plasma reactive ion etching-ICPRIE)을 통해서 연구하였다. PR 및 Ti 마스크를 이용한 자성 박막들은 HBr/Ar, HBr/$O_2$/Ar 식각 가스의 농도를 변화시키면서 식각되었다. HBr/Ar 가스를 이용 식각함에 있어서 좋은 식각 조건을 얻기 위한 parameter로서 pressure, bias voltage, rf power를 변화시켰다. 각 조건에서 Ti 하드마스크에 대한 터널 배리어층인 MgO 박막에 selectivity를 조사하였고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

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