• 정보저장시스템학회논문집
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• 제2권4호
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• pp.240-244
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• 2006

As high-definition television(HDTV) broadcasting becoming more generalized, there have been many researches and developments about a large storage capacity and a fast data transfer rate in optical disk drives (ODD). Pickup actuators must have high flexible mode frequencies and large gain margins. Flexible modes are caused by the flexibility of moving parts in the actuator and a servo bandwidth is limited by them. As a result, the system becomes unstable for high-speed operations in high density reading and recording. In this paper, we suggest improved modeling method in considering of the bonding layer. And, the flexible mode frequency of actuator is improved by Design of Experiments of lens holder. The Magnet circuit is designed considering the relation with the moving part. Through improving the yoke design, the magnetic flux is changed and the DC tilt is reduced. Consequently, we designed an actuator which has a high flexible mode frequency and a large gain margins.

• 제어로봇시스템학회논문지
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• 제16권3호
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• pp.256-263
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• 2010

The paper proposes a sensorless speed control strategy for a PMSM (Permanent Magnet Synchronous Motor) based on a new SMO (Sliding Mode Observer), which substitutes a signum function with a sigmoid function. To apply robust sensorless control of PMSM against parameter fluctuations and disturbance, the high speed SMO is proposed, which estimates the rotor position and angular velocity from the back EMF. The low-pass filter and additional position compensation of the rotor are used to reduce the chattering problem commonly found in sliding mode observer with signum function, which becomes possible by applying the sigmoid function with the control of a switching function. Also the proposed sliding mode observer with the sigmoid function has better efficiency than the conventional sliding mode observer since it adjusts the observer gain by variable boundary layer and estimates the stator resistance. The stability of the proposed sliding mode observer is verified by the Lyapunov second method in determining the observer gain. The validity of the proposed high speed PMSM sensorless velocity control has been demonstrated by real experiments.

• 한국초전도ㆍ저온공학회논문지
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• 제14권1호
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• pp.30-33
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• 2012

A double pancake winding method is widely used to make the superconducting magnet, using high temperature superconductor (HTS) tape. In the double pancake winding method, the joints with contact resistances between double pancake coils are inevitably needed. The electrical joule heating on the contacts causes refrigerant loss during operation. And a space outside the winding, for splices and mechanical support, is more than that for its layer-wound equivalent. In this paper, a double pancake winding method in order to reduce the number of the joints was proposed. Both of the double pancake coils using the conventional winding method and the proposed winding method have been fabricated and tested to make the solution technically feasible in the double pancake winding method. Especially, critical-current tests of the fabricated double pancake coils were conducted in order to show the same performance and confirm contact resistances between double pancake coils.

• ETRI Journal
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• 제28권3호
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• pp.389-392
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• 2006

In this letter, a laterally-driven bistable electromagnetic microrelay is designed, fabricated, and tested. The proposed microrelay consists of a pair of arch-shaped leaf springs, a shuttle, and a contact bar made from silicon, low temperature oxide (LTO), and gold composite materials. Silicon-on-insulator wafers are used for electrical isolation and releasing of the moving microstructures. The high-aspect-ratio microstructures are fabricated using a deep reactive ion etching (DRIE) process. The tandem-typed leaf springs with a silicon/gold composite layer enhance the mechanical performances while reducing the electrical resistance. A permanent magnet is attached at the bottom of the silicon substrate, resulting in the generation of an external magnetic field in the direction vertical to the surface of the silicon substrate. The leaf springs show bistable characteristics. The resistance of the pair of leaf springs was $7.5\;{\Omega}$, and the contact resistance was $7.7\;{\Omega}$. The relay was operated at ${\pm}0.12\;V$.

• Journal of Magnetics
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• 제14권1호
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• pp.42-46
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• 2009

The measurement of external magnetic field orientation using Giant Magneto Impedance (GMI) sensors has been performed. A soft magnetic alloy of $Co_{30}Fe_{34}Ni_{36}$ was electroplated on a Si wafer with a CoFeNi seed layer. V-shaped microwire patterns were formed using a conventional photolithography process. An external magnetic field was generated by a rectangular AlNiCo permanent magnet. The reference direction was defined as the external magnetic field direction oriented in the middle of 2 GMI devices. As the orientation of the magnetic field deviated from the reference direction, variation in the field component along each device introduced voltage changes. It was found that, by taking the voltage difference between the left and right arms of the Vshaped device, the nonlinearity of each device could be significantly reduced. The fabricated angle sensor had a linear range of approximately $70^{\circ}$ and an overall sensitivity of approximately 10 mV.

• 한국표면공학회지
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• 제36권1호
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• 융합정보논문지
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• 제11권2호
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• pp.10-15
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• 2021

본 논문에서는 먼저 습식 코팅 방법으로 페로브스카이트 (CH3NH3PbI3) 박막을 글라스 상에 형성하고, 다양한 분석 기법을 이용하여 막의 두께, 표면거칠기, 결정성, 구성성분 및 가시광 영역에서의 이 물질의 반응에 대해 논한다. 완성된 반도체 물질은 막내부에 결함(defect)이 없고 균일하며, 표면거칠기는 매우 작으며, 가시광영역에서 높은 흡수율이 관찰되었다. 다음으로 이와 같이 형성된 유무기 층에 hole 형상을 구현하기 위하여, 구멍이 일정한 간격으로 있는 메탈마스크, 페로브스카이트 물질이 코팅되어 있는 유리, 자석 순서로 되어있는 구조의 샘플을 상압플라즈마 공법을 이용하여 시간에 따른 물질에 형성되는 hole 형태의 변화를 분석하였다. 시간이 길어짐에 따라 더 많이 식각되는 것을 알 수 있으며, 이 중에서 공정 시간을 가장 오래한 샘플에 대해서는 보다 자세하게 살펴보았고, 플라즈마의 위치에 따른 차이에 의해 7영역으로 분류할 수 있었다.

• 공업화학
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• 제31권1호
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• pp.13-18
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• 2020

실크의 섬유 고분자 단백질인 피브로인을 사용하여 산화철 나노입자가 내포된 테라그노시스가 가능한 마이크로캡슐을 제조하였다. 열중량 분석으로 산화철의 함량은 4.28%, 자력계로는 5.11%로 측정되었다. 산화철 마이크로캡슐이 첨가된 마우스 섬유아세포 3T3 배양액에서 얻어진 세포 현탁액은 자력에 반응하여 맑게 변하고, 세포는 자석 방향으로 응집하였다. 배양접시 상단에 올려둔 네오디뮴 자석은 세포를 배양액 표면 중심으로 세포를 끌어모았다. 배양액 표면에 모인 세포들은 응집하여 72 h 이후 장축의 길이가 2 mm인 비대칭 타원체인 세포 집합체를 형성하였다. 세포집합체의 바깥층에는 세포들이 상대적으로 크고 서로 모여 치밀한 조직을 형성하였으나, 중심부는 물질전달제한으로 세포의 사멸이 진행되는 것으로 관찰되었다. 바깥층에는 산화철 마이크로캡슐이 자력의 방향으로 체인처럼 일렬로 늘어선 현상도 관찰되었다. 마이크로CT를 이용하여 세포응집체 내부의 산화철이 고루 분포하지 않고 자력 방향으로 비대칭적으로 분포하고 있음을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국진공학회지
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• 제16권2호
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• pp.153-159
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• 2007

KSTAR 장치의 저온 component에 헬륨을 공급하기 위한 헬륨라인은 크게 두 가지로 이루어져 있다. 냉동기에서 KSTAR 저온용기 외부까지의 트랜스퍼 라인과, 저온용기 내부의 헬륨라인이다. KSTAR 장치는 3가지 종류의 헬륨을 사용하여 각 저온 component를 냉각하는데, 초전도 자석 시스템과 버스라인에는 초임계 헬륨, 전류인입장치에는 액체 헬륨, 열차폐체에는 가스 헬륨을 공급한다. 저온용기 내부의 헬륨라인은 냉동기에서 저온용기 근처까지 연결된 배관을 저온용기 내부의 각 장치에 최단거리로 열손실 없이 설치하여 각 장치가 정상 작동하도록 하는데 그 목적이 있다. 저온용기 내부의 헬륨라인은 최대 20bar로 가압되는 운전시간 동안에 헬륨누설 없이 설치되어야 한다. 그리고 상온으로 부터의 복사열을 차단하기 위하여 다층절연제로 배관을 감싸주어야 하고 고전압 부분은 프리프레그 테잎으로 절연되어야 한다. 전기절연체는 세라믹과 스테인레스 스틸 튜브를 브레이징 접합 방법으로 연결하여 만들어진 것으론 배관과 배관, 배관과 저온 component간의 절연을 위해 사용되고, 헬륨라인과 동일하게 4.5K 초임계 헬륨온도에서 누설이 없어야 한다. 따라서 모든 전기절연체는 액체질소에 침전시켜 열충격을 가하고, 내부에 30 bar를 가압하여 진공 누설시험을 한다. 그리고 초전도 자석과 배관의 절연체로 사용되므로 15kV 고전압 절연 검사를 한다. 전기절연체의 세라믹 부분은 구조적 보강을 위하여 추가적으로 표면에 절연 작업을 한다. 현재 대부분의 저온용기 내부의 헬륨 라인은 설치 완료되어 있으며, 최종 검사가 진행 중이다.