• Title/Summary/Keyword: MULTILAYER

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Structural and Mechanical Properties of Multilayered CVD TiC/TiCN Coatings with Variations of Multilayer Period

  • Park, Geun-Woo;Kwon, Hyuck-Sang
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.638-639
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    • 2006
  • Multilayered coatings on tungsten carbide cutting tools are widely used for enhancing cutting performance. In this paper, we review the CVD TiC/TiCN multilayer as a function of the multilayer period. The TiC/TiCN multilayers in initial stage show preferred (220) orientation but shifts to (200) orientation with decreasing multilayer period. The nanohardness of TiC/TiCN multilayers were found to increase with decreasing multilayer period and shows a maximum of 23.8 GPa at a period = 33.5 nm.

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Fabrication and electrical properties of Rosen-type multilayer piezoelectric transformer (Rosen type 적층형 압전변압기의 제작 및 전기적 특성)

  • Lee, Chang-Bae;Yoon, Jung-Rag;Lee, Kyung-Min;Woo, Byung-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.250-250
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    • 2007
  • In this paper, multilayer piezoelectric transformer for high power is presented. This piezoelectric transformer, with a multilayered construction in the thickness direction, was fabricated at the sintering temperature of $1055^{\circ}C$. The electrical properties of multilayer piezoelectric transformer as a function of Internal electrode structure, with same size, were investigated. Also, the multilayer piezoelectric transformer with different layer number of 5, 10, 15 layers, were investigated.

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Characteristics of Ga-doped ZnO transparent thin films by using multilayer (다층박막을 이용한 Ga-doped ZnO 투명전도막의 특성)

  • Kim, Bong-Seok;Hwang, Hyun-Suk;Lee, Kyu-Il;Jeong, Kyu-Won;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.313-314
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    • 2007
  • Ga-doped ZnO(GZO) multilayer coatings were prepared on glass by DC sputtering. Optimization of the deposition conditions of both AZO and Au layers were performed for better electrical and optical characteristics. The properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibits low resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77%. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

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The Electrical Properties of Multilayer Piezoelectric Transformer using PZN-PMN-PZT ceramics (PZN-PMN-PZT 세라믹스를 이용한 적층 압전변압기의 전기적 특성)

  • Kim, Kook-Jin;Lee, Chang-Bae;Yoo, Ju-Hyun;Paik, Dong-Soo;Yoon, Hyun-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.301-303
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    • 2006
  • In this study, multilayer piezoelectric transformer were manufactured using the PZN-PMN-PZT ceramic and then the electrical characteristics were investigated. The voltage step-up ratio of multilayer piezoelectric transformer showed the maximum value in the vicinity of 78.16kHz and increased according to the increase of load resistance. When the output impedance coincided with the load resistance, piezoelectric transformer showed the temperature increase of about $20^{\circ}C$ at the output power of 12W. The results, the multilayer transformer manufactured using the low temperature sintered PZN-PMN-PZT ceramics can be stably driven for step-up transformers.

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Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer

  • Yu, Jiao Long;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.201-203
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    • 2016
  • Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10−5 Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10−5 Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

Hole-filling Method to Enhance Viewing Characteristics for Multilayer Type 3D Display System U sing a DMD

  • Baek, Hogil;Choi, Sungwon;Kim, Hyunho;Choi, Hee-Jin;Min, Sung-Wook
    • Current Optics and Photonics
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    • v.4 no.6
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    • pp.545-550
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    • 2020
  • We propose a hole-filling method to solve discontinuous depth representation and to reduce the visible seams and cracks that cause the limitation of the viewing angle of the three-dimensional (3D) image in the multilayer type 3D display system. The occlusion and the disocclusion regions between layers, such as the visible seams and cracks, are a major bottleneck of the multilayer type 3D display system to represent a volumetric 3D image by stacking multiple images. As a result, in the reconstructed 3D image, the visible seams and cracks appear as brighter overlapping and undesirable cut-off. In order to resolve the problems above, we applied the depth-fused effect to the sub-depth map generating algorithm and improve the viewing characteristics of the multilayer type 3D display. The experimental demonstrations are also provided to verify the proposed scheme.

Layer Controlled Synthesis of Graphene using Two-Step Growth Process

  • Han, Jaehyun;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.221.2-221.2
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    • 2015
  • Graphene is very interesting 2 dimensional material providing unique properties. Especially, graphene has been investigated as a stretchable and transparent conductor due to its high mobility, high optical transmittance, and outstanding mechanical properties. On the contrary, high sheet resistance of extremely thin monolayer graphene limits its application. Artificially stacked multilayer graphene is used to decrease its sheet resistance and has shown improved results. However, stacked multilayer graphene requires repetitive and unnecessary transfer processes. Recently, growth of multilayer graphene has been investigated using a chemical vapor deposition (CVD) method but the layer controlled synthesis of multilayer graphene has shown challenges. In this paper, we demonstrate controlled growth of multilayer graphene using a two-step process with multi heating zone low pressure CVD. The produced graphene samples are characterized by optical microscope (OM) and scanning electron microscopy (SEM). Raman spectroscopy is used to distinguish a number of layers in the multilayer graphene. Its optical and electrical properties are also analyzed by UV-Vis spectrophotometer and probe station, respectively. Atomic resolution images of graphene layers are observed by high resolution transmission electron microscopy (HRTEM).

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Study of ITO/ZnO/Ag/ZnO/ITO Multilayer Films for the Application of a very Low Resistance Transparent Electrode on Polymer Substrate

  • Han, Jin-Woo;Han, Jeong-Min;Kim, Byoung-Yong;Kim, Young-Hwan;Kim, Jong-Yeon;Ok, Chul-Ho;Seo, Dae-Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.9
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    • pp.798-801
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    • 2007
  • Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

Effect. of $TiO_2$ and PZT powder additions on the Ag/Pd Electrode for Step-down Multilayer Piezoelectric Transformer (적충 강압형 압전변압기 Ag/Pd 전극의 $TiO_2$ 와 PZT 분말의 첨가에 따른 효과연구)

  • Joo, Hyeon-Kyu;Kim, In-Sung;Vo, Vietthang;Jeong, Soon-Jong;Kim, Min-Soo;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.334-334
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    • 2010
  • In order to fabricate the multilayer piezoelectric transformer by tape casting method, we investigated the effect of $TiO_2$ and PZT powder additions on the Ag/Pd electrode. Meanwhile, effects of $TiO_2$ and PZT powder additives on the microstructure and electrical properties of Ag/Pd electrode were investigated in detail. In addition, the multilayer piezoelectric transformers were fabricated and the characteristics with various load resistance were measured at resonance frequency. The voltage step-up ratio was continuously change with increasing input voltage and load resistance, and then output voltage and powers were increased with increasing input voltage at matching impedance. The temperature rise of multilayer piezoelectric transformers were increased with increasing input voltage and load resistance. Meanwhile, multilayer piezoelectric transformers sintered at $1100^{\circ}C$ show the favorable characteristics with a power of 15 W at $100\;{\Omega}$.

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Preparation of Low Resistivity Transparent Conductive multilayer Thin Films by The Facing Targets Sputtering (대향 타겟식 스퍼티링법을 이용한 저저항 투명전도 다층박막의 제작)

  • Kim, Sang Mo;Park, Yong Seo
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.2
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    • pp.13-16
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    • 2014
  • We prepared the ITO/Ag multilayer thin films on soda-lime glass substrate by the Facing Target Sputtering System (FTS) at room temperature. To confirm the effect of Ag layer in ITO/Ag multilayer thin films, we have prepared various range of Ag layer in its thickness and investigated prior to the setting of ITO/Ag multilayer thin films. The thickness of Ag layer was controlled by the sputtering deposition time. Properties of as-prepared samples were investigated by using a four-point probe, UV-Visual spectrometer with a spectral visual range (400 - 800 nm) and X-ray diffractometer (XRD). As a result, the transmittance of as-prepared samples turned out to be very low in the visible range due to light-scattering on the surface of thin film as the thickness of Ag layer got increased. However, reduction of phenomenon of light-reflection in visual range was observed around 20nm of Ag thickness. We prepared the ITO/Ag multilayer thin film with a resistivity of about $8{\times}10^{-5}[{\Omega}-cm]$ and a transmittance of more than 80 % at 550 nm.