• Title/Summary/Keyword: MULTILAYER

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High Conductive Transparent Electrode of ITO/Ag/i-ZnO by In-Line Magnetron Sputtering Method (인-라인 마그네트론 스퍼터링 방법에 의한 고전도성 ITO/Ag/i-ZnO 투명전극)

  • Kim, Sungyong;Kwon, Sangjik
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.3
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    • pp.33-36
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    • 2015
  • It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

An Inspection System for Multilayer Co-Extrusion Blown Plastic Film Line (공압출 다층 플라스틱 필름 라인을 위한 결함 검사 시스템)

  • Hahn, Jong Woo;Mahmood, Muhammad Tariq;Choi, Young Kyu
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.45-51
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    • 2012
  • Multilayer co-extrusion blown film construction is a popular technique for producing plastic films for various packaging industries. Automated detection of defective films can improve the quality of film production process. In this paper, we propose a film inspection system that can detect and classify film defects robustly. In our system, first, film images are acquired through a high speed line-scan camera under an appropriate lighting system. In order to detect and classify film defects, an inspection algorithm is developed. The algorithm divides the typical film defects into two groups: intensity-based and texture-based. Intensity-based defects are classified based on geometric features. Whereas, to classify texture-based defects, a texture analysis technique based on local binary pattern (LBP) is adopted. Experimental results revealed that our film inspection system is effective in detecting and classifying defects for the multilayer co-extrusion blown film construction line.

Nanoparticle Ferrite Multilayers Prepared by New Self-Assembling Sequential Adsorption Method

  • Kim, Yeong-Il;Kang, Ho-Jun;Kim, Don;Lee, Choong-Sub
    • Bulletin of the Korean Chemical Society
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    • v.24 no.5
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    • pp.593-599
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    • 2003
  • The nanoparticle magnetite of which diameter was about 3 nm was synthesized in a homogeneous aqueous solution without a template. The synthesized magnetite nanoparticle was easily oxidized to maghemite in an ambient condition. The magnetic properties of the ferrite nanoparticle show superparamagnetism at room temperature and its blocking temperature is around 93 K. Modifying the sequential adsorption method of metal bisphosphonate, we have prepared a multilayer thin film of the ferrite nanoparticle on planar substrates such as glass, quartz and Si wafer. In this multilayer the ferrite nanoparticle layer and an alkylbisphosphonate layer are alternately placed on the substrates by simple immersion in the solutions of the ferrite nanoparticle and 1, 10-decanediylbis (phosphonic acid) (DBPA), alternately. This is the first example, as far as we know, of nanoparticle/alkyl-bisphosphonate multilayer which is an analogy of metal bisphosphonate multilayer. UV-visible absorption and infrared reflection-absorption studies show that the growth of each layer is very systematic and the film is considerably optically transparent to visible light of 400-700 nm. Atomic force microscopic images of the film show that the surface morphology of the film follows that of the substrate in μm-scale image and the nanoparticle-terminated surface is differentiated from the DBPA-terminated one in nm-scale image. The magnetic properties of this ferrite/DBPA thin film are almost the same as those of the ferrite nanoparticle powder only.

A Study on Path Selection Scheme for Fast Restoration in Multilayer Networks (신속한 다계층 보호 복구를 위한 경로선택 방식 연구)

  • Cho, Yang-Hyun;Kim, Hyun-Cheol
    • Convergence Security Journal
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    • v.12 no.3
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    • pp.35-43
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    • 2012
  • The explosive growth of Internet traffic cause by smart equipment such as smart phone has led to a dramatic increase in demand for data transmission capacity and network control architecture, which requires high transmission rates beyond the conventional transmission capability. Next generation networks are expected to be controlled by Generalized Multi-Protocol Label Switching(GMPLS) protocol suite and operating at multiple switching layers. In order to ensure the most efficient utilization of multilayer network resources, effective global provisioning that providing the network with the possibility of reacting in advance to traffic changes should be provided. In this paper, we proposes a new path selection scheme in multilayer optical networks based on the vertical PCE architecture and a different approach to efficiently exploit multiple PCE cooperation.

The Reaction of Internal Electrodes with Bi$_2$O$_3$ in Multilayer ZnO Varistor (적층형 ZnO바리스터의 내부전극과 Bi$_2$O$_3$ 와의 반응)

  • Kim, Young-Jung;Kim, Hwan;Hong, Kook-Sun;Lee, Jong-Kook
    • Journal of the Korean Ceramic Society
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    • v.35 no.11
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    • pp.1121-1129
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    • 1998
  • Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.

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Development of Build up Multilayer Board Rapid Manufacturing Process Using Screen Printing Technology (스크린인쇄 법을 이용한 Build-up다층인쇄회로기판의 쾌속제조공정 기술개발)

  • 조병희;정해도;정해원
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.4
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    • pp.15-22
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    • 1999
  • Generally, many equipments and a long lead time ale required to manufacture the build-up multilayer board through various processes such as etching, plating, drilling etc. Wet process is suitable for mass production, however it is not adequate for manufacturing prototype in developing stage. In this study, a silk screen printing technology is introduced to make a prototype build-up multilayer board. As for the material photo/thermal curable resin and conductive paste are used for forming dielectric and conductor. And conductive paste fills vias for interconnecting each layer, and also is used for circuit patterning by silk screen technology. Finally, the basic concept and the possibility of build-up multilayer board prototype is proposed and verified as a powerful approach, compared with the conventional processes.

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Modeling and Investigation of Multilayer Piezoelectric Transformer with a Central Hole for Heat Dissipation

  • Thang, Vo Viet;Kim, In-Sung;Jeong, Soon-Jong;Kim, Min-Soo;Song, Jae-Sung
    • Journal of Electrical Engineering and Technology
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    • v.6 no.5
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    • pp.671-676
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    • 2011
  • A multilayer square-type piezoelectric transformer with a hole at the center was investigated in this paper. Temperature distribution at the center was improved by using this construction, therefore increasing input voltage and output power. This model was simulated and investigated successfully by applying a finite element method (FEM) in ATILA software. An optimized structure was then fabricated, examined, and compared to the simulation results. Electrical characteristics, including output voltage and output power, were measured at different load resistances. The temperature distribution was also monitored using an infrared camera. The piezoelectric transformer operated at first radial vibration mode and a frequency area of 70 kHz. The 16 W output power was achieved in a three-layer transformer with 96% efficiency and $20^{\circ}C$ temperature rise from room temperature under 115 V driving voltage, 100 ${\Omega}$ matching load, $28{\times}28{\times}1.8mm$ size, and 2 mm hole diameter. With these square-type multilayer piezoelectric transformers, the temperature was concentrated around the hole and lower than in piezoelectric transformers without a hole.

Ag thickness effect on electrical and optical properties of flexible IZTO/Ag/IZTO multilayer anode grown on PET

  • Nam, Ho-Jun;Cho, Sung-Woo;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.379-379
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    • 2007
  • The characteristics of indium-zinc-tin-oxide (IZTO)-Ag-IZTO multilayer grown on a PET substrate were investigated for flexible organic light-emitting diodes. The IZTO-Ag-IZTO (IAI) multilayer anode exhibited a remarkably reduced sheet resistance of 4 ohm/sq and a high transmittance of 84%, despite the very thin thickness of the IZTO (30 nm) layer. In addition, it was shown that electrical and optical properties of IAI anodes are critically dependent on the thickness of the Ag layer, due to the transition of Ag atoms from distinct islands to continuous films at a critical thickness (14 nm). Moreover, the IAI/PET sample showed more stable mechanical properties than an amorphous ITO/PET sample during the bending test due to the existence of a ductile Ag layer. The current density voltage-luminance characteristics of flexible OLEDs fabricated on an IAI/PET substrate was better than those of flexible OLEDs fabricated on an ITO/PET substrate. This indicates that IAI multilayer anodes are promising flexible and transparent electrodes for flexible OLEDs.

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Electrical Properties of Multilayer Chip Varistor for ESD Protection with High Reliability. (고신뢰성 ESD보호용 칩 바리스터의 전기적 특성)

  • Yoon, Jung-Rag;Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man;Lee, Young-Hie;Lee, Sung-Gap;Choe, Geun-Muk;Jeong, Tae-Seok;Lee, Seok-Won;Lee, Heon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.319-320
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    • 2006
  • In order to improve the ESD(Electrical Static Discharge) resistance of multilayer chip varistors, we have investigated ZnO-$Pr_6O_{11}$ based chip varistor by applying tape casting technology, whose fundamental component were ZnO : $Pr_6O_{11}$ :$Co_3O_4$: $Y_2O_3$: $Al_2O_3$=93.67: 2.53:2.53:1.25 : 0.015 (wt %). The effect of sintering condition on the multilayer chip varistors and electric properties was studied. The electrical properties and ESD resistance of multilayer chip varistor could be influenced the sintering temperature and condition.

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Characterization of Highly Conducting ZnMgBeGaO/Ag/ZnMgBeGaO Transparent Conductive Multilayer Films with UV Energy Bandgap

  • Le, Ngoc Minh;Hoang, Ba Cuong;Lee, Byung-Teak
    • Korean Journal of Materials Research
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    • v.27 no.12
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    • pp.695-698
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    • 2017
  • ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35 % at $300^{\circ}C$). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ${\sim}2.6{\times}10^{-5}{\Omega}cm$ (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65 % ~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.