• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.813-817
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• 2006

In this paper, we analyzed the breakdown voltage and on-resistance of the multi-RESURF SOI LDMOSFET as a function of epi-layer concentration. P-/n-epi layer thickness and doping concentration of the proposed structure are varied from $2{\sim}5{\mu}m\;and\;1\{times}10^{15}/cm^{3}^{\sim}9\{times}10^{15}/cm^{3}$ to find optimum breakdown voltage and on-resistance of the proposed structure. The maximum breakdown voltage of the proposed structure is $224\;V\;at\;R_{on}=0.2{\Omega}-mon^{2}\;with\;P_{epi}=3\{times}10^{15}/cm^{3},\;N_{epi}=7\{times}10^{15}/cm^{3}\;and\;L_{epi}=10{\mu}m$. Characteristics of the device are verified by two-dimensional process simulator ATHENA and device simulator ATLAS.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.74-84
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• 2000

This paper deals with procedures for design and implementation of a DSP, which is compatible with TMS320C30 DSP. CBS(Cycle Based Simulator) is developed to study the architecture of the target DSP. The simulator gives us detailed information such as function block operation, control signal values, register condition, bus and memory values when a instruction is being carried out. RTL design is carried out by VHDL. Logic simulation and hardware emulation are employed to verify proper operation of the design. The DSP is fabricated with 0.6${\mu}m$ CMOS technology. The Chip has 450,000 gates complexity, $9{\times}9mm^2$ area, 20 MIPS operation speed. It is confirmed by running 109 instructions out of 114 instructions and 13 kinds of algorithm that the developed DSP has compatibility with TMS320C30.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.686-693
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• 2004

We have studied a method to fabricated a Surface Acoustic Waves (SAW) filter for Wide band Codeless Division Multiple Access(WCDMA) was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we developed a simulator using the mathematica package. And, we can design and fabricate the Slanted finger Inter-digital Transducer (SFIT) for the purpose to decreased the ultimate rejections on side of the electrodes, and performed computer-simulation by simulator. Also, we have employed that the block weighted type Inter-digital Transduce(IDT) as input transduce of the filter and the withdrawal weighted type IDT as an output transducer of the filter in order to minimize effect of diffractions. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are $5000\AA$, and $1\lambda/4(\cong3.6{\mu}m)$, respectively. Also the width of IDT' finger and the space between IDT' finger and reflector are $1\lambda$/16 and 1\lambda$/8, respectively. Frequency response of the fabricated SAW bandpass filter has the property that center frequency is about 190MHz, bandwidth at the 3dB is probably 4MHz and out-band attenuation is -60dB approximately.

• Journal of Environmental Health Sciences
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• v.44 no.3
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• pp.267-274
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• 2018

Objectives: This study examined the impact of a smoke-free policy on indoor air quality at indoor recreation facilities by assessing $PM_{2.5}$ concentrations before and after the implementation of the new policy. Methods: Using real-time monitors, $PM_{2.5}$ concentrations were measured in 50 billiard rooms and 50 golf simulator rooms in Seoul, Korea. The characteristics of the indoor recreation facilities, smoking status, and atmospheric conditions were recorded at the same time.After the enforcement of a smoke-free policy, $PM_{2.5}$ concentrations, installation of smoking room, and smoking status were examined when the facilities were revisited. Results: Almost a half of the billiard rooms and over 80% of golf simulator rooms were located underground. Seventy percent of the billiard rooms and one hundred percent of the golf simulator rooms were equipped with a local exhaust ventilation system. After the implementation of the smoke-free policy, 46% of the billiard rooms and 20% of the golf simulator rooms newly installed a smoking room. In the billiard rooms with a newly-installed smoking room, the $PM_{2.5}$ concentrations decreased from 97.9 to $45.6{\mu}g/m^3$ after the implementation of the smoke-free policy. The same change of 29.0 to $ 26.3{\mu}g/m^3$ was not statistically significant in golf simulator rooms. Indoor $PM_{2.5}$ concentrations were correlated with outdoor $PM_{2.5}$ concentrations, number of smokers, and number of people in the room. Conclusions: The smoke-free policy for indoor recreation facilities was not effective at making the indoor spaces free from second hand smoke. Although a few billiard rooms installed a smoking room, indoor $PM_{2.5}$ concentrations were still higher than those of outdoor $PM_{2.5}$ or atmospheric $PM_{2.5}$. Stricter enforcement of the smoke-free policy should be achieved to prevent secondhand smoke exposure.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.286-289
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• 1991

We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.6
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• pp.108-115
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• 2008

The wear on engine valve and seat insert is one of the most important factors affecting engine performance. The engine valve and seat insert must be able to withstand the severe environment that is created by: high temperature exhaust gases generated while the engine is running, rapid movement of the valve spring, high pressure generated in the explosive process. In order to study such problems, a simulator has been developed to generate and control high temperatures and various speeds during motion. The wear simulator is considered to be a valid simulation of the engine valve and seat insert wear process with various speeds during engine activity. This work focused on the test of various degrees of wear on four different exhaust valve materials such as HRV40, HRV40-FNV (face nitrided valve), STL #32, STL #6,. Throughout all tests performed in this study, the outer surface temperature of the seat insert was controlled at $350^{\circ}C$, the cycle number was $4.0{\times}10^6$, the test load was 6860 N, the fuel was LPG the test speed was 20 Hz (2400 RPM) and the seat insert material was HVS1-2. The mean (standard deviation) maximum roughness of the exhaust valve and seat insert was $25.44\;(3.16)\;{\mu}m$ and $27.53\;(3.60)\;{\mu}m$ at the HRV40, $21.58\;(2.38)\;{\mu}m$ and $25.94\;(3.07)\;{\mu}m$ at the HRV40-FNV, $36.73\;(8.98)\;{\mu}m$ and $61.38\;(7.84)\;{\mu}m$ at the STL #32, $73.64\;(23.80)\;{\mu}m$ and $60.80\;(13.49)\;{\mu}m$ at the STL #6, respectively. It was discovered that the maximum roughness of exhaust valve was lower as the high temperature hardness of the valve material was higher under the same test conditions such as temperature, test speed, cycle number, test load and seat insert material. The set of the HRV40-FNV exhaust valve and the HVS1-2 seat insert showed the best wear resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.139-142
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• 2000

Influence of frequency and duty ratio on electro-optical characteristics are experimentally investigated in surface AC plasma display panels(AC-PDPs) by using the VDS(Versitile Driving Simulator)., in which electrode gap and width are 100 ${\mu}m$ and 260 ${\mu}m$, respectively. The filling gas is Ne-Xe gas mixture, and total pressure 400 Torr. It is found that the response time gets to be fast from 450 ns to 150 ns as pulse-off time of the sustain pulse decreases from 2 ${\mu}s$ to 0.2 ${\mu}s$. Also it is found that the IR(Infra Red) intensity and the luminous decreases as pulse-off time of the sustain pulse increases from 0.2 ${\mu}s$ to 2 ${\mu}s$.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.338-341
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• 2006

This paper presents the leakage current characteristics of ZnO varistors exposed to the $8/20{\mu}s$ lightning impulse currents as functions of the number of injection and amplitude of impulse currents. The surge simulator system ECAT that can generate $8/20{\mu}s$ impulse currents with a peak short-circuit of $5[kA_p]$ was used. Leakage currents flowing through ZnO varistors subjected to the $8/20{\mu}s$ impulse currents were measured under 60 Hz AC voltages. The trend curves of resistive leakage current of ZnO varistors were analytically calculated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Proceedings of the KIEE Conference
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• 2002.11b
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• pp.186-188
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• 2002

Recently, power system has a trend of sustaining increase of power demand and large-sized system. Also, consumers has required a high reliability for the power quality in deregulated power industry. For power system operator, the accurate decision for situations of power systems and the ability of the management for the faults are required. Therefore, in this paper we presents the development of simulator which can train the process of the recovery and the decision of contingency in the case of the occurrence of faults for generation, transmission, and distribution facilities.