• 센서학회지
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• 제25권6호
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• pp.423-430
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• 2016

This study used a single metal oxide semiconductor (MOS) sensor to classify the major odorous gases hydrogen sulfide ($H_2S$), ammonia ($NH_3$) and toluene ($C_6H_5CH_3$). In order to classify these odorous substances, the voltage on the MOS sensor heater was gradually reduced in 0.5 V steps 5.0 V to examine the changes to the response by the cooling effect on the sensor as the voltage decreased. The hydrogen sulfide gas showed the highest sensitivity compared to odorless air under approximately 2.5 V and the ammonia and toluene gases showed the highest sensitivity under approximately 5.0 V. In other words, the hydrogen sulfide gas reacted better in the low temperature range of the MOS sensor, and the ammonia and toluene gases reacted better in the high-temperature range. In order to analyze the response characteristics of the MOS sensor by temperature in a pattern, a two-dimensional (2D) x-y pattern analysis was introduced to clearly classify the hydrogen sulfide, ammonia, and toluene gases. The hydrogen sulfide gas was identified by a straight line with a slope of 1.73, whereas the ammonia gas had a slope of 0.05 and the toluene gas had a slope of 0.52. Therefore, the 2D x-y pattern analysis is suggested as a new way to classify these odorous substances.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.377-379
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• 1989

Very thin gate oxide(100-300A) MOS capacitor has been fabricated. The effect of series resistance must be calculated and the exact metal-semiconductor work function difference should be obtained to get the fixed oxide charge density exisiting in oxide. Dilute oxidation make sagy to control oxide thickness and reduce fixed oxide charge density. In case of dilute oxidation, fixed oxide charge density depends on oxidation time. If oxide is very thin, the annealing effect is ignored.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.100-106
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• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

• 전기전자학회논문지
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• 제22권3호
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• pp.706-711
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• 2018

본 논문에서는 플라즈마 화학기상증착 (plasma enhanced chemical vapor deposition, PECVD) 방식을 이용한 산질화규소(Silicon oxynitride, SiON) 절연체를 이용하여 4H-SiC metal-oxide-semiconductor (MOS) 소자를 제작하고 특성 분석을 수행하였다. 제작된 소자는 금속 증착 후 열처리 과정 (post metallization annealing, PMA)을 통하여 트랩 밀도가 크게 감소하는 것을 확인하였으며, 특히 $500^{\circ}C$의 forming gas 분위기에서 열처리 된 소자의 경우 매우 뛰어난 MOS 특성을 나타내었다. 본 연구를 통하여 4H-SiC MOS 구조를 위한 대체 게이트 절연체로써 PECVD SiON의 활용 가능성을 확인 할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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• pp.79-79
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• 1994

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.95-97
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• 1988

The instability of MOS devices is mainly caused by the oxide charges, and as the need to develop the gate metal grows researches for various new metal gate have been performed, and in these researches, the difference work function existing between the metal and the semiconductor should be considered. Here int his paper, the device is made by the sputtering and the LPCVD method using pure Al, compound metal. poly-si, as a gate metal, the result of the research was shown that the work function difference from using different gate metals effects on the flatband voltage shift. This means we can infer that the threshold voltage adjustment is possible by using different gate metals and this whole mechanism makes the devices behavior more stable.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1963-1966
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• 2008

We fabricate and evaluate the metal-oxide-semiconductor (MOS) transistor probe with the focused-ionbeam (FIB) for surface electric properties. The probes are designed with the rectangular and V-shaped structures, and their dimensions are determined considering the contact mode operation. The conductive nano tip is grown with FIB system, and deposition condition is controlled for the sharp tip. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions, and the results show the well defined measurement patterns.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.22-25
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• 2022

Metal oxide semiconductor (MOS) based on spray-pyrolysis deposition technique has attracted large attention due to simple and low-cost processibility while preserving their intrinsic optical and electrical characteristics. However, their high process temperature limits practical applications. Here, we demonstrated the nc-ZnO/ZnO field-effect transistors (FETs) via spray-pyrolysis as incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. The nc-ZnO/ZnO FETs exhibit good quality of electrical properties. Our experiments reveal that nc-ZnO in active layer enhance electrical characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.9-10
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• 2007

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition(ALD). And we studied the electrical characterization of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3\;at\;350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Through TEM(Transmission Electron Microscope), XRD(X-ray Diffraction), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of thin Hf metal layer for the better $HfO_2$/Si interface property was investigated.