• Journal of Magnetics
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• v.13 no.2
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• pp.70-75
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• 2008

In this study, a MOKE (Magneto-optical Kerr effect) measurement method for magnetic nanostructures is proposed. Theoretically, the MOKE signal enhancement can be predicted and confirmed when an anti-reflection coated substrate is used. Since MOKE is a ratio of reflectivity and the difference between the reflectivities for two magnetic states, when the reflectivity of the substrate part is reduced by employing an anti-reflection coated substrate, MOKE signal enhancement can be achieved. The enhancement is confirmed by simple numerical MOKE calculations. When the reflectivity of an anti-reflection coated substrate is 0.7%, the calculated MOKE signal is about 79% of its bulk values for the 100-nm wide Fe nanowire with a 1500-nm radius laser beam. It was found that, for various numerical calculations, a larger MOKE signal is obtained relative to a smaller substrate reflectivity.

• Journal of Magnetics
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• v.14 no.1
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• pp.31-35
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• 2009

Herein, the Magneto-Optical Kerr Effect (MOKE) signal enhancement in nanostructures in investigated. It is well known that the MOKE signals of ferromagnetic thin films are enhanced with an additional dielectric layer due to multiple reflections. The MOKE signal is modulated with the additional dielectric layer thickness and is at a maximum when reflectivity is at a minimum. This is not always true in the nanostructures due to the contribution from the non-magnetic substrate portion, especially when substrate reflectivity is minimized and the dependence of the additional dielectric layer thickness for the nanostructure is changed in the case of the continuous thin film. We showed that the MOKE signal for nanostructures could be enhanced with a properly designed, dielectric layer in addition to the anti-reflection coated substrates.

• Journal of Magnetics
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• v.14 no.1
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• pp.36-41
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• 2009

Magneto-optical Kerr effect (MOKE) magnetometry was used to investigate magnetization reversal dynamics in 30-nm NiFe/15-nm FeMn, 15-nm FeMn/30-nm CoFe bilayers, and 30-nm NiFe/(2,10)-nm FeMn/30-nm CoFe trilayers. The in-plane magnetization components of each ferromagnetic layer, both parallel and perpendicular to the applied field, were separately determined by measuring the longitudinal and transverse MOKE hysteresis loops from both the front and back sides of the film for an oblique incident s-polarized beam. The magnetization of the FeMn/CoFe bilayer was reversed abruptly and symmetrically through nucleation and domain wall propagation, while that of the NiFe/FeMn bilayer was reversed asymmetrically with a dominant rotation. In the NiFe/FeMn/CoFe trilayers, the magnetic reversal of the two ferromagnetic layers proceeded via nucleation and domain wall propagation for 2-nm FeMn, but via asymmetric rotation for 10-nm FeMn. The exchange-biased ferromagnetic layers showed the magnetization reversal along the same path in the film plane for the decreasing and increasing field branches from transverse MOKE hysteresis loops, which can be qualitatively explained by the theoretical model of the exchange-biased ferromagnetic/antiferromagnetic systems.

• Journal of Magnetics
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• v.14 no.1
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• pp.15-17
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• 2009

The magnetostatic interaction between the two magnetic nanowires was studied by using the longitudinal magneto-optical Kerr effect (MOKE). For this purpose two magnetic nanowires having different widths (400 nm, 800 nm) were fabricated on an Si substrate with electron beam lithography and the lift-off method. Magnetic hysteresis loops measured by MOKE showed double switching behavior, corresponding to the separated switching fields of each wire. The switching field of the narrow wire was greatly affected by the separation between the two wires. Based on how the switching field changes with decreasing separation, it is concluded that the magnetostatic field of the 800-nm wire strongly affects the switching of the 400-nm wire when the separation is less than $0.5{\mu}m$.

• Journal of the Korean Magnetics Society
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• v.19 no.6
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• pp.191-196
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• 2009

Magnetic bias phenomena of field-annealed CoFeSiB amorphous ribbons showing asymmetric giant magnetoimpedance was investigated by MOKE method. The specimens removed the crystalline layer at one surface side by chemical etching were prepared and measured magnetization curves by MOKE to investigate the effect of the crystalline layer on magnetization of inner soft amorphous phase. We observed the shift of hysteresis loop, and concluded that the crystalline layer exerts bias field effect on inner soft amorphous phase and the direction of bias filed is opposite to the magnetization direction of surface crystalline layer.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.226-227
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• 2007

• Journal of Magnetics
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• v.7 no.1
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• pp.4-8
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• 2002

The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.199-199
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.193-193
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• 2004

• Journal of the Korean Magnetics Society
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• v.23 no.5
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• pp.154-158
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• 2013

We have analyzed the magnetization curves measures by using VSM and MOKE in synthetic antiferromagnetic coupled CoB/Ru/CoB thin film. The measured results were compared with calculated ones by Stoner-Wohlfarth model based on the magnetization behavior of two ferromagnetic layers ($M_1$, $M_2$). The calculated total magnetization ($M_{tot}=M_1+M_2$) and single layer magnetization($M_1$) behaviors were compared with measured results by using VSM and MOKE, respectively. The total magnetization curve ($M_{tot}=M_1+M_2$) showed reversible magnetization behavior with flopping field of about 50 Oe. While single layer magnetization ($M_1$) behaviors showed irreversible magnetization behavior in the field range of $H_F$ < H < $H_F$. These magnetization behaviors were explained by the angle difference between magnetization directions of two ferromagnetic layers in SAF sample.