• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.4
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• pp.506-514
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• 1998

The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.49-59
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• 2014

Effects of the dielectric constant and thickness of a feed substrate on the bandwidth and radiation characteristics of an aperture coupled microstrip patch antenna (ACMPA) are investigated. The optimized return loss bandwidth of an ACMPA increases without the degradation of radiation characteristics as the feed substrate dielectric constant increases for the same feed substrate thickness. The optimized return loss bandwidth of an ACMPA with the dielectric constant of a feed substrate of 10, which is compatible with the high dielectric constant monolithic microwave integrated circuit (MMIC) materials, increases without the degradation of radiation characteristics as the thickness of a feed substrate decreases. The ACMPA configuration is suitable for integration with MMICs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.1A
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• pp.85-90
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• 2008

Effects of the emitter degeneration on linearity have been investigated in SiGe HBT double-balanced up-converters with the Gilbert-cell structure. The emitter-coupled degeneration resistors have been optimized for high P1-dB and IP3 through the nonlinear harmonic-balance simulation. Two types of up-converter MMICs fabricated in $0.35{\mu}m$ Si-BiCMOS process were measured to verify the simulation results. The up-converter without the degeneration resistors produces a P1-dB of -13 dBm with an OIP3 of 3.7 dBm, while the up-converter with the degeneration resistors produces a P1-dB of -10 dBm with an OIP3 of 8.7 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.12
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• pp.1380-1387
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• 2012

The transmit/receive(T/R) module is a key component in the active phased array system. The brick-type T/R module has been widely used and the miniaturization has been an important factor to get the flexibility of the system configuration. For the miniaturization, multi-function chips(MFC) having a common leg configuration are suitable to reduce the number of required MMICs and a high isolation between transmit and receive paths is necessary for the high gain T/R modules. In this work, we propose a bias timing scheme for the compact T/R module and show the optimum timing based on measurements, in order to improve the feed-back path loop problem and the consequent isolation problem of the common leg configuration. We have implemented high power(7 W/channel) and high T/R gain(35 dB transmit and 30 dB receive gains) within the half size($140{\times}80{\times}16mm^3$) of the conventional T/R modules.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.3
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• pp.29-34
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• 2021

For the purpose of Application to the small radar sensor, the MMIC Chips, which are the core component of the W-band, was designed in Korea according to the characteristics of the transceiver and manufactured by 60nm GaN and 0.1㎛ GaAs pHEMT process. The output power of PA is 28 dBm at center frequency of W-band and Noise figure is 6.7 dB of switch and LNA MMIC. Output power and Noise figure of MMIC chips developed in domestic was applied to the transmitter and receiver module through W-band waveguide low loss transition structure design and impedance matching to verify the performance after the fabrication are 26.1~27.7 dBm and 7.85~10.57 dB including thermal testing, and which are close to the analysis result. As a result, these are judged that the PA and Switch and LNA MMICs can be applied to the small radar sensor.

• Journal of the Korea Institute of Military Science and Technology
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• v.26 no.3
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• pp.227-233
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• 2023

In this paper, to substitute the existing TWTA(Travailing Wave Tube Amplifier) component in small radar system, we developed the Ku band SSPA(Solid-State Power Amplifier) based on the fabrication of power MMIC (Monolithic Microwave Integrated Circuit) chips. For the development of the 500 W SSPA, the 40 W-grade power MMIC was designed by ADS(Advanced Design System) at Keysight company with UMS GH015 library, and was processed by UMS foundry service. And 70 W main power modules were achieved the 2-way T-junction combiner method by using the 40 W-grade power MMICs. Finally, the 500 W SSPA was fabricated by the wave guide type power divider between the drive power amplifier and power modules, and power combiner with same type between power modules and output port. The electrical properties of this SSPA had 504 W output power, -58.11 dBc spurious, 1.74 °/us phase variation, and -143 dBm/Hz noise level.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.10
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• pp.65-70
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• 2008

We design and fabricate the 94 GHz Coplanar waveguide(CPW)-to-rectangular waveguide transition that is transmits signal smoothly between the CPW, which is a popular transmission line of the planar circuits, and rectangular waveguide for the 94 GHz transceiver system. The proposed transition composed of the unilateral fin-line taper and open type CPW-to-slot-line transition is based on the hard and inflexible sapphire for the flip-chip bonding of the planar MMICs using conventional MMIC technology. We optimize a single section transition to achieve low loss by using an EM field solver of Ansoft's HFSS and fabricate the back- to-back transition that is measured by Anritsu ME7808A Vector Network Analyzer in a frequency range of $85{\sim}105$ GHz. From the measurement and do-embedding CPW with 3 mm length, an insertion and return loss of a single-section transition are 1.7 dB and more an 25 than at 94 GHz, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1050-1058
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• 2005

This paper presents how to design and implement a very compact, cost effective and broad band receiver module for IEEE 802.16 FWA(Fixed Wireless Access) in the 40 GHz band. The presented receiver module is fabricated in a multi-layer LTCC(Low Temperature Cofired Ceramic) technology with cavity process to achieve excellent electrical performances. The receiver consists of two MMICs, low noise amplifier and sub-harmonic mixer, an embedded image rejection filter and an IF amplifier. CB-CPW, stripline, several bond wires and various transitions to connect each element are optimally designed to keep transmission loss low and module compact in size. The LTCC is composed of 6 layers of Dupont DP-943 with relative permittivity of 7.1. The thickness of each layer is 100 um. The implemented module is $20{\times}7.5{\times}1.5\;mm^3$ in size and shows an overall noise figure of 4.8 dB, an overall down conversion gain of 19.83 dB, input P1 dB of -22.8 dBm and image rejection value of 36.6 dBc. Furthermore, experimental results demonstrate that the receiver module is suitable for detection of Digital TV signal transmitted after up-conversion of $560\~590\;MHz$ band to 40 GHz.