• ETRI Journal
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• v.27 no.2
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.47-54
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• 2003

New efficiency enhancement techniques have been devised and implemented to InGaP/GaAs HBT MMIC power amplifiers for W-CDMA mobile terminals applications. Two different types of bias current control circuits that select the efficient quiescent currents in accordance with the required output power levels are proposed for overall power efficiency improvement. A dual chain power amplifier with single matching network composed of two different parallel-connected power amplifier is also introduced. With these efficiency enhancement techniques, the implemented MMIC power amplifiers presents power added efficiency (PAE) more than 14.8 % and adjacent channel leakage ratio(ACLR) lower than -39 dBc at 20 dBm output power and PAE more than 39.4% and ACLR lower than -33 dBc at 28 dBm output power. The average power usage efficiency of the power amplifier is improved by a factor of more than 1.415 with the bias current control circuits and even up to a factor of 3 with the dual chain power amplifier.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.265-268
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• 1999

In this paper, a wideband MMIC distributed amplifier was designed using the fabricated PHEMT with the unit gate width of 80 ${\mu}{\textrm}{m}$ and 4 gate fingers at our Lab. S$_{21}$ gains are 7.1 ~ 10.0 ㏈. Input and output reflection coefficients obtained from the distributed amplifier in the frequency range of DC~25 ㎓ are lower then -8 ㏈. A chip size of the designed wideband MMIC distributed amplifier is 1.9 mm $\times$ 1.1 mm.

• Journal of IKEEE
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• v.28 no.1
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• pp.33-37
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• 2024

In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.3
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• pp.264-272
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• 2009

In this paper, a Ka-band 10 W power amplifier module is designed and fabricated using MIC(Microwave Integrated Circuit) module technology which combines multiple power MMIC(Monolithic Microwave Integrated Circuit) chips on a thin film substrate. Modified Wilkinson power dividers/combiners are used for millimeter wave modules and CBFGC-PW-Microstrip transitions are utilized for reducing connection loss and suppressing resonance in the high-gain and high-power modules. The power amplifier module consists of seven MMIC chips and operates in a pulsed mode. for the pulsed mode operation, a gate pulse control circuit supplying the control voltage pulses to MMIC chips is designed and applied. The fabricated power amplifier module shows a power gain of about 58 dB and a saturated output power of 39.6 dBm at a center frequency of the interested frequency band.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.197-201
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• 2000

In this paper, a MMIC(Monolithic Microwave Integrated Circuit) broadband drive amplifier for wireless communication system has designed using active feedback method. The MMIC brodband amplifier was designed using 0.5$\mu\textrm{m}$ MESFET of ETRI library. Simulation results show that gain is 22 dB, and gain flatness ${\pm}$1 dB. Maximum output power 15 dBm and noise figure 2.5 dB in bandwidth 500 MHz ～3.0 GHz. The MMIC Broadband amplifer's chip area is 14mm${\times}$1.4mm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.7
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• pp.620-626
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• 2015

In this paper, a 2~6 GHz wideband GaN power amplifier MMIC is designed and fabricated using a second-order all-pass filter for input impedance matching and an LC parallel resonant circuit for minimizing an output reactance component of the transistor. The second-order all-pass filter used for wideband lossy matching is modified in an asymmetric configuration to compensate the effect of channel resistance of the GaN transistor. The power amplifier MMIC chip that is fabricated using a $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors, Corp. is $2.6mm{\times}1.3mm$ and shows a flat linear gain of about 13 dB and input return loss of larger than 10 dB. Under a saturated power mode, it also shows output power of 38.6~39.8 dBm and a power-added efficiency of 31.3~43.4 % in 2 to 6 GHz.

• Journal of the Korea Institute of Military Science and Technology
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• v.26 no.3
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• pp.227-233
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• 2023

In this paper, to substitute the existing TWTA(Travailing Wave Tube Amplifier) component in small radar system, we developed the Ku band SSPA(Solid-State Power Amplifier) based on the fabrication of power MMIC (Monolithic Microwave Integrated Circuit) chips. For the development of the 500 W SSPA, the 40 W-grade power MMIC was designed by ADS(Advanced Design System) at Keysight company with UMS GH015 library, and was processed by UMS foundry service. And 70 W main power modules were achieved the 2-way T-junction combiner method by using the 40 W-grade power MMICs. Finally, the 500 W SSPA was fabricated by the wave guide type power divider between the drive power amplifier and power modules, and power combiner with same type between power modules and output port. The electrical properties of this SSPA had 504 W output power, -58.11 dBc spurious, 1.74 °/us phase variation, and -143 dBm/Hz noise level.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.125-131
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• 2002

This paper presents MMIC drive and power amplifiers covering 6-18 ㎓. For simple wideband impedance matching and less sensitivity to fabrication variation, modified distributed topologies are employed in the both amplifiers. Cascade amplifiers with a self-biasing circuit through feedback resistors are used as unit gain blocks in the drive amplifier, resulting in high gain, high stability, and compact chip size. Self impedance matching and high-pass, low-pass impedance matching networks are used in the power amplifier. In measured results, the drive amplifier showed good return losses ($S_11,{\;}S_{22}{\;}<{\;}-10.5{\;}dB$), gain flatness ($S_{21}={\;}16{\;}{\pm}0.6{\;}dB$), and $P_{1dB}{\;}>{\;}22{\;}dBm$ over 6-18 GHz. The power amplifier showed $P_{1dB}{\;}>{\;}28.8{\;}dBm$ and $P_{sat}{\;}{\approx}{\;}30.0{\;}dBm$ with good small signal characteristics ($S_{11}<-10{\;}dB,{\;}S_{22}{\;}<{\;}-6{\;}dB,{\;}and{\;}S_{21}={\;}18.5{\;}{\pm}{\;}1.25{\;}dB$) over 6-18 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.139-142
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• 2008

An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is $3.5\;mm{\times}3.9\;mm$.