• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.195-200
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• 2018

A W-band frequency octupler is implemented on 100-nm GaAs pHEMT process. The fabricated octupler can be used as a local oscillator or a signal source of W-band transceivers. Three common-source doublers are connected in cascade to multiply an input signal of 10.75 GHz to 83 GHz. A common-source amplifier is followed for each doubler to improve the conversion gain and suppress the unwanted harmonics. The fabricated octupler showes high output of more than 6 dBm in the 80 - 84 GHz band and achieved excellent spurious suppression performance over 20 dBc.

• Journal of Navigation and Port Research
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• v.28 no.3
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• pp.213-219
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• 2004

In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.10
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• pp.1061-1070
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• 2009

In this paper, we have designed TDL(True-time Delay Line) for eliminating beam-squint occurring in active phased array antenna with large electrical size operated in wide bandwidth, and have tested its electrical performance. The proposed TDL device is composed of 4-bit microstrip delay line structure and MMIC amplifier for compensation of the delay-line loss. The measured results of gain and phase versus delay state satisfy the electrical requirements, also P1dB output power and noise figure meet the requirement. To verify the performance of fabricated TDL, we have simulated the beam patterns of wide-band active phased array antenna using the measured results and have certified the beam pattern compensation performance. As a result of simulated beam pattern compensation with respect to the 675.8 mm size antenna which is operated in X-band, 800 MHz bandwidth, we have reduced the beam squint error of ${\pm}1^{\circ}$ with ${\pm}0.1^{\circ}$. So this TDL module is able to be applied to active phase array antenna system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.844-853
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• 2008

This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.

• Journal of electromagnetic engineering and science
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• v.18 no.3
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• pp.188-198
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• 2018

In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a small, lightweight, reliable, and stable ultra-wideband receiver for millimeter-wave bands and the contents of the approach. In this paper, we designed and fabricated a stable receiver with having low noise figure, flat gain characteristics, and low noise characteristics, suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device. In order to compensate for the mismatch between the components used in the receiver, an amplifier, mixer, multiplier, and filter suitable for wideband frequency characteristics were designed and applied to the receiver. To improve the low frequency and narrow bandwidth of existing products, mathematical modeling of the wideband receiver was performed and based on this spurious signals generated from complex local oscillation signals were designed so as not to affect the RF path. In the ultra-wideband receiver, the gain was between 22.2 dB and 28.5 dB at Band A (input frequency, 18-26 GHz) with a flatness of approximately 6.3 dB, while the gain was between 21.9 dB and 26.0 dB at Band B (input frequency, 26-40 GHz) with a flatness of approximately 4.1 dB. The measured value of the noise figure at Band A was 7.92 dB and the maximum value of noise figure, measured at Band B was 8.58 dB. The leakage signal of the local oscillator (LO) was -97.3 dBm and -90 dBm at the 33 GHz and 44 GHz path, respectively. Measurement was made at the 15 GHz IF output of band A (LO, 33 GHz) and the suppression characteristic obtained through the measurement was approximately 30 dBc.

• Journal of the Institute of Convergence Signal Processing
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• v.13 no.1
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• pp.39-43
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• 2012

60GHz band RF transceiver was made with the NRD waveguide structure for the point- to-point communication. A dielectric line that of comprising NRD waveguide was the milling process was not easy because a material gets soft, and also compression and expansion according to a temperature were serious, so this line was not suitable for the device in which the resonance characteristic was important. In addition, the thing for comprising amplification module was difficult in the NRD waveguide structure. In this paper, a way in which to overcome mentioned in upper part, the transceiver was made by below technology. Components in which the resonance characteristic was not important were made with the NRD waveguide hybrid IC, and components in which the resonance characteristic was important were made with waveguide. An amplifier packaged and modularizing the bare chip, it equipped at the NRD waveguide within. Manufactured transceiver communicated with FDD method, and it had 10dBm output power, and -60dBm minimum receive sensitivity.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.294-301
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• 2000

One of the most important design parameters in a microwave radio transmitting system is to reduce spurious response from the output spectrum of the transmitting system. A Local oscillator (LO) is seldom totally pure and at the least contain some LO harmonic signals. A LO or any oscillator is a transmitter if provided with a suitable radiator, conduction, or leakage path. Where mixer is employed in the output of the LO mixer generated spurs can be increased by RF amplifier. To reduce LO leakage, notch filter or band pass filter has been conventionally used. In this paper, the leakage reduction(LR) signal, which has the same magnitude and the opposite phase with respect to LO leakage signal, is added to the output of mixer of the wireless LAN system. The LO leakage is reduced by 30 dB more than the conventional methods do. The proposed method is potentially suitable for low-cost, reliable, and simple application of monolithic microwave integrated circuits (MMICs)

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.4
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• pp.129-133
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• 2020

In this paper, a temperature compensation circuit is presented in order to mitigate gain variability due to temperature in the W-band low-noise amplifier (LNA). The proposed cascode temperature compensation bias circuit automatically controls gate bias voltages of the common-source LNA in order to suppress variations of small-signal gain. The designed circuit was realized in a 100-nm GaAs pHEMT process. The simulated voltage gain of W-band LNA including the proposed bias circuit is >20 dB with gain variability less than ±0.8 dB in the range of temperatures between -35 to 71℃. We expect that the proposed circuit contributes to millimeter-wave receivers for stable performances in radar applications.