• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.861-863
• /
• 2003

In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

• Proceedings of the IEEK Conference
• /
• 2000.11b
• /
• pp.17-20
• /
• 2000

We have enhanced the yield of 0.25 ${\mu}{\textrm}{m}$ T-gate $Al_{0.25}$G $a_{0.75}$As/I $n_{0.2}$G $a_{0.8}$As P-HEMT using three-layer E-beam lithography process and selective etching process. The three-layer resist structure (PMMA/copolymer/ PMMA=2000 $\AA$/3000 $\AA$/2000 $\AA$) and three developers (Benzene：IPA=1：1,Methanol：IPA =1：1,MIBK：IPA=1：3) were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. Also 1 wt% citric acid： $H_2O$$_2$：N $H_{4}$OH(200m1：4ml：2.2ml) solution were used for uniform gate recess. The etching selectivity of GaAs over $Al_{0.25}$G $a_{0.75}$As is measured to be 80. So these P-HEMT processes can be used in X-band MMIC LNA fabrication.ion.ion.ion.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.22 no.8
• /
• pp.1622-1631
• /
• 1997

A 3-stages Active Microstrip Phased Array Antenn(AMPAA) is implemented using Injection-Locking Coupled Oscillators(ILCO). The AMPAA is a beam scanning active antenna with capability of electrical scanning by frequency varation of ILCO. The synchronization of resonance frequencies in array elements is occured by ILCO, and the ILCO amplifies the injection signal and functions as a phase shifter. The microstrip ptch is operated as a radiation element. The unilateral amplifier is a mutual coupling element of AMPAA, eliminates the reverse locking signal and controls the locking bandwidth of ILCO. The possibility of Monolithic Microwave Integrated Circuits(MMIC) of T/R module is proposed by simplified and integrated fabrication process of AMPAA. The 0.75.$lambda_{0}$ is fixed for a mutual coupling space to wide the scanning angle and minimize the multi-mode. The AMPAA has beam scanning angle of 31.4.deg., HPBW(Half Power Beam Widths) of 26.deg., directive gain of 13.64dB and side lobe of -16.5dB were measured, respectively.

• ETRI Journal
• /
• v.42 no.4
• /
• pp.549-561
• /
• 2020

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.3
• /
• pp.278-284
• /
• 2010

In this paper, a millimeter-wave detector using zero-bias schottky diode is designed and fabricated at W-band. It consists of LNA(Low Noise Amplifier) and detector module to improve sensitivity. LNA case with a highly stop-band characteristic is designed to prevent the oscillation by LNA MMIC chip. Diode detector of planar structure is fabricated for the easy connection with LNA module and zero bias Schottky diode is utilized. In practice, the fabricated diode detector have shown the detection voltage of 20~500 mV to the RF input power of -45~-20 dBm. The proposed W-band detector can be applicable to the passive millimeter image system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.8
• /
• pp.808-820
• /
• 2014

In this paper, we fabricated two on-wafer type DUT(Device-Under-Test)s; a 10-dB attenuator and an amplifier using commercially available MMIC and we proposed the measurement method of the noise parameters for the two fabricated DUTs. Since the 10-dB attenuator DUT is a passive device, its noise parameters can be accurately determined when its S-parameters are measured. In the case of the amplifier DUT, its noise parameters are available in the datasheet. Hence, the measured noise parameters using the proposed method can be assessed by comparing with the known noise parameters. The noise parameter measurement method having been presented by the authors requires the S-parameters of the 8-port network used in the measurement and limited to coaxial type DUTs. When on-wafer probes are included in the 8-port network, the 8-port S-parameters requires the measurements with different kinds of connectors. In this paper, we obtained the 8-port S-parameters using the Smart-Cal function in the network analyzer. The measured noise parameters shows about ${\pm}0.2dB$ fluctuations for $NF_{min}$. Other noise parameters with the frequency change show good agreement with the expected results.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.3
• /
• pp.189-195
• /
• 2004

A 10 Gb/s limiting amplifier IC with the emitter area of $1.5{\times}10{\mu}m^2$ for optical transmission system was designed and fabricated with a AIGaAs/GaAs HBTs technology. In this stud)', we evaluated fine pitch bump using WL-CSP (Wafer Level-Chip Scale Packaging) instead of conventional wire bonding for interconnection. For this we developed WL-CSP process and formed fine pitch solder bump with the $40{\mu}m$ diameter and $100{\mu}m$ pitch on bonding pad. To study the effect of WL-CSP, electrical performance was measured and analyzed in wafer and package module using WL-CSP. In a package module, clear and wide eye diagram openings were observed and the riselfall times were about 100ps, and the output" oltage swing was limited to $600mV_{p-p}$ with input voltage ranging from 50 to 500m V. The Small signal gains in wafer and package module were 15.56dB and 14.99dB respectively. It was found that the difference of small signal gain in wafer and package module was less then 0.57dB up to 10GHz and the characteristics of return loss was improved by 5dB in package module. This is due to the short interconnection length by WL-CSP. So, WL-CSP process can be used for millimeter wave GaAs MMIC with the fine pitch pad.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.2 no.4
• /
• pp.635-641
• /
• 1998

This paper presents development of a small size LNA operating at 824 ∼ 849 MHz used for a receiver of a CELLULAR CDMA Base station and a transponder. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA and is suitable for input stage matching. The LNA consists of low noise GaAs FET ATF-10136 and internally matched VNA-25. The LNA is fabricated with both the RF circuit and the self-bias circuits in aluminum housing. As a result, the characteristics of the LNA implemented here shows above 35dB in gain and below 0.9dB in noise figure, 18.6dBm P1dB power, a typical two tone IM3, -31.17dB with single carrier backed off 10dB from P1dB.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.22 no.6
• /
• pp.149-154
• /
• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.21 no.9
• /
• pp.2362-2372
• /
• 1996

This paper deals with the design and development of an Injection-Locking Coupled Oscillators(ILCO), which functions like phase-shifter in the Active Intergrated Phased Array Antenna(AIPAA). This linear array 2-element ILCO consists of two Injection Locking Hair-pin Resonator Oscillators(ILHRO) and an unilateral amplifier. The first and second elements of the ILCO have same frequency tuning range but locking bandwidths of 11.5MHz and 14MHz respectively. A phase shift of .DELTA..PHI.=158.4.deg.(-78.0.deg. to 80.4.deg.) could be obtained inthe second element of ILCO when the first elementof the ILCO was in the reference locking mode(.DELTA..PHI.=0.deg.). When the ILCO is applied to the AIPAA, the predicted beam scanning angle value will be 38.4.deg.. Each ILCO gives good frequency stability and lower AM, FM, and PM noise charactheristics in the mutual coupling lockingmode. The ILCO can not only play a part as the phase shifter for the AIPAA but it can also be usedas the power combining device in the mm-wave frequency range and as a part of a T/R MMIC module.