• 한국제4기학회지
• /
• 제17권2호
• /
• pp.165-165
• /
• 2003

A borehole core ECSDP-102 (about 68.5 m long) has been investigated to get information on paleoenvironmental changes in response to the sea-level fluctuations during the period of late Quaternary. Several AMS $\^$14/C ages show that the core ECSDP-102 recorded the depositional environments of the northern East China Sea for approximately 60 ka. The Yangtze River discharged huge amounts of sediment into the northern East China Sea during the marine isotope stage (MIS) 3. In particular, $\delta$$\^$13/Corg values reveal that the sedimentary environments of the northern East China Sea, which is similar to the Holocene conditions, have taken place three times during the MIS 3. It is supported by the relatively enriched $\delta$$\^$13/Corg values of -23 to -21$\textperthousand$ during the marine settings of MIS 3 that are characterized by the predominance of marine organic matter akin to the Holocene. Furthermore, we investigated the three Holocene sediment cores, ECSDP-101, ECSDP-101 and YMGR-102, taken from the northern East China Sea off the mouth of the Yangtze River and from the southern Yellow Sea, respectively. Our study was focused primarily on the onset of the post-glacial marine transgression and the reconstructing of paleoenvironmental changes in the East China Sea and the Yellow Sea during the Holocene. AMS $\^$14/C ages indicate that the northern East China Sea and the southern Yellow Sea began to have been flooded at about 13.2 ka BP which is in agreement with the initial marine transgression of the central Yellow Sea (core CC-02). $\delta$$\^$18/O and $\delta$$\^$13/C records of benthic foraminifera Ammonia ketienziensis and $\delta$$\^$13/Corg values provide information on paleoenvironmental changes from brackish (estuarine) to modem marine conditions caused by globally rapid sea-level rise since the last deglaciation. Termination 1 (T1) ended at about 9.0-8.7 ka BP in the southern and central Yellow Sea, whereas T1 lasted until about 6.8 ka BP in the northern East China Sea. This time lag between the two seas indicates that the timing of the post-glacial marine transgression seems to have been primarily influenced by the bathymetry. The present marine regimes in the northern East China Sea and the whole Yellow Sea have been contemporaneously established at about 6.0 ka BP. This is strongly supported by remarkably changes in occurrence of benthic foraminiferal assemblages, $\delta$$\^$18/O and $\delta$$\^$13/C compositions of A. ketienziensis, TOC content and $\delta$$\^$13/Corg values. The $\delta$$\^$18/O values of A. ketienziensis show a distinct shift to heavier values of about 1$\textperthousand$ from the northern East China Sea through the southern to central Yellow Sea. The northward shift of $\^$18/O enrichment may reflect gradually decrease of the bottom water temperature in the northern East China Sea and the Yellow Sea.

• 대한전자공학회논문지SD
• /
• 제38권11호
• /
• pp.765-770
• /
• 2001

고온 급속 열처리시킨 LiNbO₃/AIN/Si(100) 구조를 이용하여 MFIS 소자를 제작하고, 비휘발성 메모리 동작 가능성을 확인하였다. 고유전율 AIN 박막 위에 Pt 전극을 증착시켜 제작한 MIS 구조에서 측정한 1MHz C-V 특성곡선에서는 히스테리시스가 전혀 없고 양호한 계면특성을 보였으며, 축적 영역으로부터 산출한 비유전율 값은 약 8 이었다. Pt/LiNbO₃/AIN/Si(100) 구조에서 측정한 1MHz C-V 특성의 축적영역에서 산출한 LiNbO₃ 박막의 비유전율 값은 약 23 이었으며, ±5 V의 바이어스 범위 내에서의 메모리 윈도우는 약 1.2 V이었다. 이 MFIS 구조에서의 게이트 누설전류밀도는 ±500 kV/cm의 전계 범위 내에서 10/sup -9/ A/㎠ 범위를 유지하였다. 500 kHz의 바이폴러 펄스를 인가하면서 측정한 피로특성은 10/sup 11/ cycle 까지 초기값을 거의 유지하는 우수한 특성을 보였다.

• 한국전기전자재료학회논문지
• /
• 제20권1호
• /
• pp.8-13
• /
• 2007

In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

• 한국표면공학회지
• /
• 제29권6호
• /
• pp.809-815
• /
• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• 전자공학회논문지A
• /
• 제31A권12호
• /
• pp.56-63
• /
• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• 자원환경지질
• /
• 제45권3호
• /
• pp.307-315
• /
• 2012

본 연구에서는 보통 포틀랜드 시멘트 OPC(Ordinary Portland Cement)와 MIS(Micro-Injection Process System) 공법에서 사용하고 있는 마이크로 시멘트의 지반 침투성능을 평가하기 위해 실내모형시험을 수행하였다. 이를 위해 그라우트 주입을 일정한 방법으로 재현할 수 있는 가압침투주입장치를 제작하였으며 공시체 제작방법을 마련하였다. 물시멘트비를 5:1에서 1:1까지 변화하여 주입시험을 수행한 결과 물시멘트비가 증가함에 따라 침투성능이 선형적으로 증가하였으며 주입성능을 비교하면 상대적으로 비표면적이 큰 MIS가 OPC보다 동일한 배합비에서 침투성능이 우수한 것으로 나타났다. 특히 물시멘트비가 2:1~1:1의 부배합에서 OPC의 침투성능이 매우 낮은 것으로 관찰되었다. 또한 침투량과 주입시간과의 관계곡선을 hyperbolic으로 모델링하여 예측치를 산정하고 이를 측정치와 비교한 결과 그라우트 성능평가에 대한 hyperbolic 모델의 잠재력이 검증되었다.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권5호
• /
• pp.463-469
• /
• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• 한국컴퓨터정보학회논문지
• /
• 제18권5호
• /
• pp.113-120
• /
• 2013

본 논문은 지금까지 NP-완전인 난제로 알려진 4-색 정리를 $O(n)$선형시간 복잡도로 수기식과 컴퓨터를 활용하여 증명하는 알고리즘을 제안하였다. 제안된 알고리즘은 그래프 $G=(V_1,E_1)$의 정점 집합 V를 최대 독립집합 $\bar{C_1}$와 최소 정점 피복 집합 $C_1$으로 정확히 양분하는 기법을 적용하여 $\bar{C_1}$에 첫 번째 색을 배정하고, $C_1$ 집합의 정점들로 축소된 연결 그래프 $G=(V_2,E_2)$를 대상으로 $\bar{C_2}$와 $C_2$로 양분하여 $\bar{C_2}$에 두 번째 색을 지정하였다. $C_2$ 집합의 정점들로 축소된 연결 그래프 $G=(V_3,E_3)$를 대상으로 $\bar{C_3}$와 $C_3$로 양분하여 $\bar{C_3}$에 세 번째 색을 지정하였다. 마지막으로$C_3$를 $\bar{C_4}$로 하여 4번째 색을 배정하였다. 2개의 실제 지도 그래프와 2개의 평면 그래프를 대상으로 제안된 알고리즘을 적용한 결과 모든 그래프에서 채색수 ${\chi}(G)=4$를 찾는데 성공하였다. 결국, 제안된 "4-색 알고리즘"은 평면 그래프의 4-색을 결정하는 일반적인 알고리즘으로 적용할 수 있을 것이다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.77-78
• /
• 2006

최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

• 전자공학회논문지A
• /
• 제29A권3호
• /
• pp.87-95
• /
• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.