• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.29-32
• /
• 1999

$GaF_3$ films were directly grown on p' and p-type GaAs(100) substrates using a $SF_6$ plasma discharge system. GaAs MIS(Meta1-Insulator-Semiconductor) capacitor was successfully fabricated for about 1 hour at temperature $290^{\circ}C$ using the as-grown $GaF_3$ films. The as-grown films on p'-GaAs exhibited a current density of less than 6.68 $\times$ $1O^{-9}$ A/$cm^2$ at a breakdown field of 500kV/cm and a refractive index of 2.0 ~ 2.3 at a wavelength of 632.8 nm. The dielectric constant was about 5 derived from 1 MHz capacitance-voltage (C-V) measurements. Dielectric dispersion of the fluoridated films on p'-GaAs measured ranged from 100 Hz to 10 MHz was not observed.

• 한국진공학회지
• /
• 제20권5호
• /
• pp.327-332
• /
• 2011

ITO가 코팅된 유리 기판 위에 플라즈마 중합법으로 styrene 고분자 박막을 제작하고 상부 전극을 진공 열증착법으로 제작된 Au 박막으로 한 MIM (metal-insulator-metal) 소자를 제작하였다. 또한, 플라즈마 중합된 styrene 고분자 박막을 유기 절연박막으로 하고 진공열증착법으로 pentacene 유기반도체 박막을 제작하여 유기 MIS (metal-insulator-semiconductor) 소자를 제작하였다. 플라즈마 중합법으로 제작된 styrene (ppS; plasma polymerized styrene) 고분자 박막은 styrene 단량체(모노머) 고유의 특성을 유지하면서 고분자 박막을 형성함을 확인하였으며, 통상적인 중합법으로 제작된 고분자 박막 대비 k=3.7의 높은 유전상수 값을 보였다. MIM 및 MIS 소자의 I-V 및 C-V 측정을 통하여 ppS 고분자 박막은 전계강도 $1MVcm^{-1}$에서 전류밀도 $1{\times}10^{-8}Acm^{-2}$ 수준의 낮은 누설전류를 보이고 히스테리시스가 거의 없는 우수한 절연체 박막임이 판명되었다. 결과적으로 유기박막 트랜지스터 및 유기 메모리 등 플렉서블 유기전자소자용 절연체 박막으로의 응용이 기대된다.

• 한국전기전자재료학회논문지
• /
• 제26권12호
• /
• pp.882-887
• /
• 2013

We investigated a SiC-based hydrogen gas sensor with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications. The sensor was fabricated by Pd/$Ta_2O_5$/SiC structure, and a thin tantalum oxide ($Ta_2O_5$) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature as well as high permeability for hydrogen gas. In the experiment, dependence of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm was analyzed at room temperature to $500^{\circ}C$. As the result, our sensor exploiting a $Ta_2O_5$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.194-195
• /
• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.

• 한국통신학회논문지
• /
• 제35권11C호
• /
• pp.896-900
• /
• 2010

본 논문은 차세대 저장장치로 각광받고 있는 패턴드 미디어 장치에 대한 트랙 위치 오프셋에 따른 성능을 알아본다. 패턴드 미디어 채널은 SUL(Soft Underlayer)의 유무에 따라 1차원 검출기인 비터비 검출기와 2차원 검출기인 2차원 SOVA(Soft output Viterbi algorithm)를 이용해 실험하였고, 트랙 위치 오프셋이 없을 때, 10%, 20%, 30%, 40% 있을 때 실험하였다. 트랙 위치 오프셋이 10%일 때는 성능영화가 0.3 dB ~ 0.5 dB 정도로 크지 않았지만 그 이상이 되면, 성능열화가 심해지는 것을 볼 수 있다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1919-1921
• /
• 1999

AlN thin films were fabricated by sputter for the application of MIS device with Al/AlN/Si structure. We controled that sub-temperature room-temperature. Sputtering pressure 5 mTorr, flow ratio Ar:$N_2$=1:1(4sccm:4sccm), and appended hydrogen gas $0{\sim}5%$. AlN thin films thickness fabricated to maintain $2700{\AA}$ time control. Before the experiment remove to the contaminated material use the Ultrasonic every 10 minute use the acetone and ethanol, then use the HF remove oxide-substance at 10 second. To analyze characteristic of the $H_2$ gas addition period, C-V and I-V characteristic make and experiment $H_2$ gas at addition period progressive capability of I-V and C-V characteristic.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권12호
• /
• pp.755-760
• /
• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• 한국수소및신에너지학회논문집
• /
• 제10권1호
• /
• pp.59-69
• /
• 1999

반응성 스퍼터링법으로 AIN 박막을 증착하여 Al/AlN/Si구조의 MIS소자용 절연박막으로서의 응용가능성에 대해 연구하였다. 기판온도 $300^{\circ}C$, RF power 150W, 스퍼터링 압력 5mTorr, 아르곤과 질소 가스유량비 1:1 의 조건에서 5%의 수소가스를 부가적으로 첨가해 주는 시기에 따른 AIN박막의 표면형상변화, I-V특성, C-V특성, 조성을 조사하였다. 수소첨가에 따라 증착속도는 상당히 감소하였으나 표면형상 및 거칠기는 크게 변하지 않았다. I-V특성에서는 AIN 박막 증착시 초기 20분간 수소첨가를 시킨 경우가 후기 20분간 수소첨가를 시킨 경우보다 보다 우수한 절연특성을 보였다. 또한 C-V특성에서도 수소가 첨가됨에 따라 플랫밴드전압이 매우 낮아졌으며, 초기 20분간 수소첨가를 시킨 경우는 히스테리시스를 거의 보이지 않았으나, 후기 20분간 수소첨가를 시킨 경우는 상당한 히스테리시스를 보였다. AES를 이용한 조성분석을 통해 수소가스가 첨가됨에 따라 AIN박막내의 산소농도가 낮아진다는 사설을 발견하였고, 이에 따라 박막의 절연특성 및 C-V특성이 향상될 수 있는 가능성을 보였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
• /
• pp.187-190
• /
• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• 한국전기전자재료학회논문지
• /
• 제22권6호
• /
• pp.470-475
• /
• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.