• 전기전자학회논문지
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• 제18권4호
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• pp.620-624
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• 2014

본 연구에서는, Ni/CNT/$SiO_2$ 구조의 4H-SiC MIS 캐패시터를 제작하고 전기적 특성을 조사하였다. 이를 통하여 4H-SiC MIS 소자에서 탄소나노튜브의 역할을 분석하고자 하였다. 탄소나노튜브는 이소프로필알코올과 혼합하여 $SiO_2$ 표면에 분산하였다. 소자의 전기적 특성 분석을 위하여 300-500K의 온도 범위에서 소자의 정전용량-전압 특성을 측정하였다. 밴드 평탄화 전압은 양의 방향으로 shift되었다. 정전용량-전압 그래프로부터 계면 포획 전하 밀도 및 산화막 포획 전하 밀도가 유도되었다. 산화막의 상태는 4H-SiC MIS 구조의 계면에서 전하 반송자 또는 결함 상태와 관련된다. 온도가 증가함에 따라 밴드 평탄화 전압은 음의 방향으로 shift되는 결과를 얻었다. 실험 결과로부터, Ni과 $SiO_2$ 계면에 탄소나노튜브를 첨가함에 따라 4H-SiC MIS 캐패시터의 게이트 특성을 조절 가능할 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.242-242
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• 2010

산화 알루미늄($Al_2O_3$) 박막을 p-type Czochralski(CZ) Si 위에 Remote Plasma Atomic Layer Deposition(RPALD)을 이용하여 저온 공정으로 증착하였다. Photolithography 공정으로 grid 패턴을 형성한 후 열 증착기로 알루미늄을 증착하여 MIS-IL (Metal-Insulator-Semiconductor Inversion Layer) solar cell을 제작하였다. 반응소스로는 Trimethylaluminum (TMA)과 $O_2$를 이용하였다. $Al_2O_3$ 박막의 전기적 특성 평가를 위해 MIS capacitor를 제작하여 Capacitance-voltage (C-V), Current-voltage (I-V), Interface state density ($D_{it}$)를 평가하였으며 Solar simulator를 이용하여 MIS-IL Solar cell의 Efficiency을 측정하였다.

• 한국진공학회지
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• 제20권5호
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• pp.327-332
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• 2011

ITO가 코팅된 유리 기판 위에 플라즈마 중합법으로 styrene 고분자 박막을 제작하고 상부 전극을 진공 열증착법으로 제작된 Au 박막으로 한 MIM (metal-insulator-metal) 소자를 제작하였다. 또한, 플라즈마 중합된 styrene 고분자 박막을 유기 절연박막으로 하고 진공열증착법으로 pentacene 유기반도체 박막을 제작하여 유기 MIS (metal-insulator-semiconductor) 소자를 제작하였다. 플라즈마 중합법으로 제작된 styrene (ppS; plasma polymerized styrene) 고분자 박막은 styrene 단량체(모노머) 고유의 특성을 유지하면서 고분자 박막을 형성함을 확인하였으며, 통상적인 중합법으로 제작된 고분자 박막 대비 k=3.7의 높은 유전상수 값을 보였다. MIM 및 MIS 소자의 I-V 및 C-V 측정을 통하여 ppS 고분자 박막은 전계강도 $1MVcm^{-1}$에서 전류밀도 $1{\times}10^{-8}Acm^{-2}$ 수준의 낮은 누설전류를 보이고 히스테리시스가 거의 없는 우수한 절연체 박막임이 판명되었다. 결과적으로 유기박막 트랜지스터 및 유기 메모리 등 플렉서블 유기전자소자용 절연체 박막으로의 응용이 기대된다.

• Journal of Information Display
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• 제9권2호
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• pp.1-4
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• 2008

In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.229-232
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• 2002

In this paper, etching characteristics of Zr-silicate in Ar/ClrCH4 plasma is studied, and possible plasma damage is investigated by fabricating MIS capacitors. We'could increase the selectivity to near 2 while keeping the etch rate of Zr-silicate to about 70 nm/min. Leakage current and flat band voltage shift of PUZr-silicate/si capacitors are measured before and after plasma etching. Using capacitor patterns with the same area but different circumference lengths, we try to separate etching damage mechanisms and to optimize the process. The leakage current of 1.2$\times$10-3 A/cm2 and smaller capacitance variation of 0.2 nF at -2V are obtained in Ar/Cl2/CF4 plasma at 200 W RF power

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.8-13
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• 2007

In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.152-155
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• 2003

Ashing of photoresist was investigated in dielectric barrier discharges in atmospheric pressure by changing applied voltage, frequency, flow rate. we analyzed the plasma by Optical Emission Spectroscopy(OES) to monitor the variation of active oxygen species. Another new peaks of oxygen radical is observed by addition of argon gas. This may explain the increase in ashing rate with argon addition. With the results of Optical Emission Spectroscopy(OES), we can find the optimized ashing conditions. MIS capacitor for monitoring charging damage by the plasma was also studied. The results suggest the dielectric barrier discharges(DBD) can be an efficient, alternative Plasma source for general surface processing.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.67-69
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• 2006

Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of $C_i,\;C_d,\;C_b$, and $R_b$ are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.237-240
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• 2012

A conducting polymer, poly 3-hexylthiophene (P3HT) is characterized with the metal-insulator-semiconductor (MIS) measurement method and the high frequency planar circuit method. From the MIS measurement method, the relative dielectric constant of the P3HT film is estimated to be 4.4. For the high frequency planar circuit method, a coplanar waveguide is fabricated on the P3HT film. When applying +20 V to the CPW on P3HT film, the P3HT film is in accumulation mode and becomes lossy. The CPW on P3HT film is 1.5 dB lossier than the CPW on $SiO_2$ film without P3HT film at 50 GHz.