• Journal of the Korean Vacuum Society
• /
• v.5 no.3
• /
• pp.223-228
• /
• 1996

$SiO_2$ insulator layers on InSb have been prepared by remote PECVD system a low temperature below $200^{\circ}C$. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the $SiO_2$ were studied. The InSb MIS device using $SiO_2$ was fabricated and measured its current-voltage and capacitance-voltage characteritance-voltage charateristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throughout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26nA/$\textrm{cm}^2$ at 0.75MV/cm , and the breakdown voltage was about 1MV/cm. The interface-stage density at mid-bandgap extracted from 1MHz C-V measurement was $54\times 10^{11}\textrm{cm}^2-2V^{-1}$.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.4
• /
• pp.751-755
• /
• 2007

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.

• Journal of the Korean Society for Precision Engineering
• /
• v.15 no.5
• /
• pp.19-27
• /
• 1998

Color Display Tube (CDT) used in computer monitors, consists of many components. Deflection Yoke(DY) among them supplies the vertical and horizontal magnetic fields so that the spatial trajectories of electron beams are deflected according to the synchronization signals. If the magnetic fields are not correctly formed, there will be color blurring or blooming by a mis-convergence of each beam and the color image on screen may not be clear. Therefore, in the manufacture of DY. its quality is strictly examined to get the desired convergence and the occurred mis-convergence can be cured by sticking ferrite sheets on the inner part of DY. However, because it needs expert's knowledge and experience to find the proper position of the sheet, this article introduces an intelligent controller that the knowledge-base represented by a neuro-fuzzy model is used to find the optimal position of the ferrite sheet for the convergence.

• Transactions of the Korean hydrogen and new energy society
• /
• v.10 no.1
• /
• pp.59-69
• /
• 1999

AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5mTorr, flow rate ratio of $Ar/N_2=1$, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2000.04a
• /
• pp.33-43
• /
• 2000

In order to streamline the procedure of data transmission in port and logistics industries, MOMAF introduced EDI systems as the method of data transmission of 19 documents 5 years ago. While operating EDI system, MOMAF has found the inconvenience and the inefficiency of using EDI systems in the field of requesting fast response. This thesis focuses on finding the possible fields of on-line processing system instead of EDI system and suggests the economic effects occurred by the on-line processing system. The result of the paper presents that if data transmission area such as 'ocean vessel entrance report', 'application for using tug boat'and 'application for pilot'is changed to on-line processing method, the processing cost and time will be reduced compared with EDI processing method.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.5
• /
• pp.709-715
• /
• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• Journal of Korea Society of Industrial Information Systems
• /
• v.12 no.5
• /
• pp.201-210
• /
• 2007

The purpose of this study is to investigate the status of manufacturing information system (MIS) which has been introduced to enhance the manufacturing competitiveness in Korea and to enable statistical comparison of whether there are significant differences in implementing manufacturing information system between large companies and small and medium enterprises (SMEs). The result of the empirical test of 105 manufacturing companies in Korea showed that the utilization and satisfaction of MIS in large companies are significantly greater than those in SMEs.

• Journal of Korean Port Research
• /
• v.14 no.2
• /
• pp.133-142
• /
• 2000

In order to streamline the procedure of data transmission in port and logistics industries, MOMAF introduced EDI systems as the method of data transmission of 19 documents 5 years ago. While operating EDI system, MOMAF has found the inconvenience and the inefficiency of using EDI systems in the field of requesting fast response. This thesis focuses on finding the possible fields of on-line processing system. The result of the paper presents that if data transmission area such as 'application for pilot'is changed to on-line processing method, the processing cost and time will be reduced compared with EDI processing method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.194-195
• /
• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.

• Electrical & Electronic Materials
• /
• v.9 no.5
• /
• pp.463-469
• /
• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.