• 센서학회지
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• 제30권1호
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• pp.51-55
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• 2021

We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the 'Landau-Levich (LL) regime'. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6 A/㎠ at 1.2 MV/㎠, annealing at 200 ℃) and uniform electrical characteristics when TD was 30 ℃ and VC was 5 mm/s. In addition, at TD = 30 ℃, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.

• 한국재료학회지
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• 제17권11호
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.209-212
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• 2001

High quality Taros thin films have been obtained from anodizing. The as-deposited amorphous films have excellent physical and electrical properties: refractive indices ~2.15, dielectric constants ~25, and leakage currents <10$^{-8}$ Ac $m^{-2}$ at 1MV $cm^{-1}$ , 700$\AA$ thickness. We fabricated a MIM element with theses T $a_2$ $O_{5}$ films which had perfect current-voltage symmetry characteristics using a new process technology which was post annealing of whole MIM element instead of conventional annealing conditions (top-electrode metals, annealing conditions) on the capacitor performances were extensively discussed throughout this work.k.

• Journal of Korean Vacuum Science & Technology
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• 제6권3호
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• pp.126-132
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• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.359-363
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• 2005

유기 박막트랜지스터 (OTFT)를 제작하기 위하여 게이트 절연막으로서 PVP 계통의 유기막을 갖는 MIM(metal-insulator-metal)구조의 유기 절연층 소자를 제작하였다. 유기 절연층의 형은 ITO/Glass 기판위에 polyvinyl 계열의 PVP(poly-4-vinylphenol)를 용질로, PGMEA (propylene glycol monomethyl ether acetate)를 용매로 사용하여 co-polymer PVP를 제조하였다. 또한 열경화성 수지인 poly(melamine-co-formaldehyde)를 경화제로 사용하여 cross-linked PVP 절연막을 합성하였다. 유기 절연층의 전기적 특성은 co-polymer PVP 소자에 비해 cross-link 방식으로 제조된 소자에서 약 300 pA의 낮은 누설전류와 상대적으로 낮은 잡음전류의 특성을 나타내었다. 또한 cross-linked PVP 절연막에서 보다 양호한 표면형상 (거칠기)이 관찰되었으며 정전용량 값은 약 0.11${\~}$0.18 nF의 값을 나타내었다.

• 한국인터넷방송통신학회논문지
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• 제9권3호
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• pp.173-178
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• 2009

금속산화물 박막 소자를 제작하여 전기적 특성을 조사하였다. 소자는 Electrode를 TOP-TOP구조로 제작하였으며 스위칭 특성을 연구하기 위해 전극간의 산화금속박막의 전도특성이 측정되었다. 소자의 저항변화는 전압을 선형적으로 인가하여 측정하였다. 제작된 소자는 MIM구조로써 외부에서 인가하는 전기적 신호에 의하여 전기전도도가 큰 On-state와 전기전도도가 낮은 Off-state로 바뀌는 특성을 나타내었다. $Si/SiO_2/MgO$ 소자는 Forming에 의해 저항이 큰 상태에서 저항이 작은 상태로 전기적 특성이 변화하면서 스위칭 특성을 보였다. 본 연구를 통하여 산화금속은 차세대 비휘발성 메모리로는 물론 다른 전기적 응용이 기대되는 물질임을 확인하게 되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.143-144
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• 2005

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.362-365
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• 2002

Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500 $^{\circ}C$ were 17-25 and 3${\times}$10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan $\delta$) depend on top metal electrode. We showed that Al top metal electrode results in the best result.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.1253-1256
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• 2005

We have developed an electron lithography method, Electron Emission Lithography (EEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MIM technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 10 um in a system capable of 100 m resolution. Further improvements in resolution to 50 nm are possible.

• 전기학회논문지
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• 제56권8호
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• pp.1471-1475
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• 2007

In this paper, a novel embedded ultra wideband (UWB) band-pass filter is presented on a FR-4 package substrate including high Dk resin coated copper (${\varepsilon}_r=30$) film. The proposed UWB filter is comprised of a parallel resonator with meander-type uniform impedance resonator (UIR) and two series resonators with high Q circular stacked spiral inductor and metal-insulator-metal (MIM) capacitor. In order to obtain excellent attenuation characteristics by generating attenuation poles in lower and upper stop bands, a single MIM capacitor is added to each resonator. The fabricated FR-4 embedded UWB filter has insertion loss of -1.0dB and return loss of -11dB, respectively. It has also extremely wide bandwidth (over 50%) and small size ($3.7{\times}4{\times}0.77\;mm^3$) which is compatible with LTCC devices.