• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.18-21
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• 2005

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuirfilms. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed a and the molecular area Am. Compression speed a was about 30, 40, and 50 mm/min. Langmuir-Blodgett(LB) layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Aul Arachidic acid! AI, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to+3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.20-22
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• 2006

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed and the molecular area Am. Compression speed was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9~21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.177-178
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• 2007

본 연구에서는 MIM (Metal-Insulator-Metal) capacitor의 유전 물질로 사용되는 $Ba_xTi_yO_z$(BTO) 박막의 식각 특성을 고찰하였다. $Cl_2$/Ar 혼합가스를 이용하여 Inductively Coupled Plasma(ICP)에서 BTO 박막을 식각하였고, 식각된 BTO박막의 표면을 X-ray photoelectron spectroscopy(XPS) 분석하였다. BTO박막의 식각 속도는 Ar이 80%인 식각 조건에서 31.7nm/min의 식각 속도를 추출하였고, 동시에 Pt박막에 대한 높은 선택비를 얻었다. X-ray photoelectron spectroscopy (XPS) 분석 결과로부터 표면 반응을 조사하여, 식각 기구를 고찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.370-371
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• 2006

Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed and the molecular area Am. Compression speed was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9~21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.583-590
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• 2010

In this paper, a novel CRLH-TL unit cell with controllable transmission zeros was proposed. Proposed composite right/left handed transmission line(CRLH-TL) unit cell is implemented in the form of the metal-insulator-metal(MIM) capacitors, the microstrip stub inductors, and the co-planar waveguide(CPW) inductor. And this proposed CRLH-TL generates two transmission zeros in lower/upper passband by the effort of electromagnetic couplings between each MIM capacitors and microstrip stub inductors. Using this proposed CRLH-TL, broad bandpass filter for UWB system was designed and fabricated. The measured results reveal that the two transmission zeros are observed in lower/upper passband and the overall size of the filter, excluding the feed line is about 8 mm$\times$8 mm, less then $\lambda_g$/4 on electric size.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.129-133
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• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.124-127
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• 2001

In this study, the electrical properties of polymer thin film layered by spin-coating method was investigated, and this polymer is one of the polymer applied to insulation layer for display, this polymer has relatively high dielectric constant, hygroscopic property and easy to make thin film by spin-coating. That is, in this study use the polymer that is cyano acrylate terpolymer, and the MIM(Metal/Insulator/Metal) structures were fabricated to measure the electrical properties such as Voltage-Current characteristics and dielectric characteristics. Also the conductivity and dielectric constant has been calculated. As a result, the conductivity in room temperature was $0.85{\times}10^{-14}{\sim}1.35{\times}10^{-14}$[S/cm]. The fact that this polymer be acted as insulator can be supported by this result. The dielectric constant was calculated as $10.39{\sim}12.05$ higher than Dopont Inc., this make it possible to accumulate more charges in insulation layer under same condition.

• Proceedings of the KAIS Fall Conference
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• 2007.11a
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• pp.133-135
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• 2007

PMMA (polymethyl metha crylate) 유기막의 농도별 최적화를 위하여 1, 2, 4, 6, 8 wt.%의 PMMA 농도별로 Al/PMMA/ITO/Glass 구조의 MIM (metal- insulator-metal) 캐패시터 소자를 제작하였다. 유기 절연층의 형성은 ITO/Glass 기판 위에 PMMA를 용질로, Anisle을 용매로 사용하여 스핀코팅법으로 소자를 형성하였다. 제작된 소자에 대해 농도에 따른 전기적 특성을 조사한 결과 누설전류는 2wt.% 농도의 PMMA로 제작된 소자에서 0.3 pA로 가장 우수한 결과를 얻을 수 있었다. 또한 동일한 PMMA 농도로 제작된 캐패시터 소자의 정전용량은 1.2 nF으로 가장 좋은 결과를 얻을 수 있었으며, 계산된 값과 매우 유사한 값을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.