• Journal of the Korean Institute of Gas
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• v.7 no.1 s.18
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• pp.1-9
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• 2003

A Multi-distinction Equipment Screening Algorithm (MESA) is proposed. It selectively integrates Dow's F&EI as its process hazard index technique and ESA (Equipment Screening Algorithm) as qualitative hazard classification technique, and retrieves a detailed list of hazardous equipments with the total hazard indices of those equipments. The inherent expert system, which includes the accident scenarios of the equipments and processes and experts' views of them, narrows further down the list of hazardous equipments and recommends only the most notable candidates. Through the case study of distinguishing the hazardous ranking of the equipments of the LPG underground storage process, using the expert system or not, the applicability of MESA has been validated. Taking the characteristics of the process equipments with hazardous ranking in the point of process intrinsic safety, this proposed algorithm would contribute to providing engineers or managers with information on constructing safely devices and mitigation devices and on scheduling emergency response planning.

• 대한생식의학회:학술대회논문집
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• 1994.10a
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• pp.26.1-26.1
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• 1994

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.32-37
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• 1999

A capacitance-type humidity sensor with mesa structure in which porous silicon layer is used as humidity-sensing material is developed and its humidity sensing properties are measured. This sensor has a structure where two electrodes are set on the up-side of the wafer against the past typical structure having these electrodes on the up and down-side of the wafer. Therefore, the sensor can be fabricated monolithically to be more compatible with the IC process technology, and is possible to detect more correct output capacitance by removing the effect of the parasitic capacitance from the bottom layer and other junctions. To do this, the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. From the completed samples, the dependence of capacitance on the relative humidity of 55 to 90% more was measured at room temperature. As the result, the measured capacitance increased monotonously higher at the low frequency of 120 Hz, where the capacitance was observed to increase over 300%.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.66-79
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• 1999

We investigate the effects of high input power on the performance of optical bistable symmetric self-electooptic effect devices (S-SEEDs) using extremely shallow quantum wells (ESQWs). In this study, we consider the four ESQWs SEEDs; anti-reflection (AR)-coated ESQWs S-SEED, back-to-back AR coated ESQWs S-SEED, asymmetric F뮤교-Perot (AFP) ESQWs S-SEED, and back-to-back AFP-ESQWs S-SEED. As the input power increases, device performances such as on/off contrast ratio, on/off reflectivity difference are seriously degraded because of ohmic heating and exciton saturation. On the other hand, switching speed of the device increases up to certain value and then begins to decrease. With reasonable optimization of the input power for the best switching speed operation of the devices in a cascading optical interconnection system, we simulate and analyze the system bit-rate of the various ESQWs S-SEEDs, for a mesa of $5{\times}5{\mu}m^2$ size, changing the namber of quantum wells for the external bias of 0 V and -5V.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.65-65
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• 2000

Microwave response of intrinsic Josephson junctions in mesa structure formed on HgI2-intercalated Bi2Sr2CaCu2O8+x single crystals was studied in a wide range of microwave frequency. With irradiation of 73${\sim}$76 GHz microwave, the supercurrent branch becomes resistive above a certain onset microwave power. At low current bias, the current-voltage characteristics show linear behavior, while at high current bias, the resistive branch splits into multiple sub-branches. The voltage spacing between neighboring sub-branches increase with the microwave power and the total number of sub-branches is almost identical to the number of intrinsic Josephson junctions in the mesa. All the experimental results suggest that each sub-branch represents a specific mode of collective motion of Josephson vortices generated by the microwave irradiation. With irradiation of microwave of microwave of frequency lower than 20 GHz, on the other hand, no branch splitting was observed and the current-voltage characteristics exhibited complex behavior at hlgh blas currents. This result can be explained in terms of incoherent motion of Josephson vortices generated by non-uniform microwave irradiation.

• Clinical and Experimental Reproductive Medicine
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• v.24 no.2
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• pp.273-277
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• 1997

This case report describes the pregnancy following the transfer of cryopreserved embryos generated from intracytoplasmic sperm injection (ICSI) using frozen-thawed sperm obtained by microepididymal sperm aspiration (MESA) in patient with congenital absence of the vas deferens (CAVD).

• Interaction and multiscale mechanics
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• v.6 no.3
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• pp.301-316
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• 2013

The influence of indenter geometry on nanoindentation was studied using a static molecular dynamics simulation. Dislocation nucleation, dislocation locks, and dislocation movements during nanoindentation into Al (001) were studied. Spherical, rectangular, and Berkovich indenters were modeled to study the material behaviors and dislocation activities induced by their different shapes. We found that the elastic responses for the three cases agreed well with those predicted from elastic contact theory. Complicated stress fields were generated by the rectangular and Berkovich indenters, leading to a few uncommon nucleation and dislocation processes. The calculated mean critical resolved shear stresses for the Berkovich and rectangular indenters were lower than the theoretical strength. In the Berkovich indenter case, an amorphous region was observed directly below the indenter tip. In the rectangular indenter case, we observed that some dislocation loops nucleated on the plane. Furthermore, a prismatic loop originating from inside the material glided upward to create a mesa on the indenting surface. We observed an unusual softening phenomenon in the rectangular indenter case and proposed that heterogeneously nucleating dislocations are responsible for this.

• MALSORI
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• v.68
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• pp.49-63
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• 2008

This paper describes the development and assessment of a hidden Markov model (HMM) based Tagalog speech synthesis system, where Tagalog is the most widely spoken indigenous language of the Philippines. Several aspects of the design process are discussed here. In order to build the synthesizer a speech database is recorded and phonetically segmented. The constructed speech corpus contains approximately 89 minutes of Tagalog speech organized in 596 spoken utterances. Furthermore, contextual information is determined. The quality of the synthesized speech is assessed by subjective tests employing 25 native Tagalog speakers as respondents. Experimental results show that the new system is able to obtain a 3.29 MOS which indicates that the developed system is able to produce highly intelligible neutral Tagalog speech with stable quality even when a small amount of speech data is used for HMM training.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.708-710
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• 2003

One-dimensional array of InAs quantum dots (QDs) have been grown on V-grooved GaAs substrates by low-pressure metalorganic chemical vapor deposition. Atomic force microscope images show that InAs QDs are aligned in one-dimensional rows along the ［011］oriented bottom of V-grooves and no QDs are formed on the sidewalls and the surface of mesa top. Capability to grow one-dimensional InAs QDs array would feasible for the single electron tunneling devices and other novel quantum-confined devices.