• 제목/요약/키워드: MESA

검색결과 155건 처리시간 0.027초

캐포츠 스타일의 유형별 장식 특성에 관한 연구 (A Study on the Decorative Characteristics of Caports Style according to Its Categories)

  • 박낭희;최윤미
    • 복식문화연구
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    • 제15권5호
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    • pp.770-780
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    • 2007
  • Caports is a fusion style which consists of mix and match and various T.P.Os. The expressive features of Caports style have been strengthened by the combination of functional and decorative design. This study aims to divide the images into categories and to study the decorative features of each category. It is classified into five groups according to its images, Healthy & Sexy, Athletic, Romantic, Girlish, Vintage. The following study has assorted the pictures of Caports style into categories and presents decorative design features in each category. Analyzed materials have been collected from fashion magazines, catalogs, and fashion related Internet sites from 2002 to 2006. The dominant feature of caports was sensitive fashionableness as a day wear based on sportswear. This feature was determined by every factor such as materials, structure and details. In other words, the usage of jersey that could give functionalities and elasticity, structure that exhibit one's silhouette and the decorative designs of functional details make it possible to have this kind of peculiar style. Decorative designs shown in sports wear, casual wear and women's wear were all applied in Caports style. They showed a moderate and coherent style rather than one that was richly ornate or magnificent. So, in the mesa trend of "sportism", Caports style could easily fit into the 21st century's consumers' demands for fusion. And this study of decorating methods of each category of Caports style may provide useful data to help develop the products that consumers demand.

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열대리슈마니아 핵형에 대한 열쇽, 약제 및 감마선 조사의 영향 (Influence of heat shock, drugs, and radiation on karyotype of Leishmania major)

  • Min Seo;Duk-Kyu Chun;Sung-Tae HONG;Soon-Hyung Lee
    • Parasites, Hosts and Diseases
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    • 제31권3호
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    • pp.277-284
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    • 1993
  • 세계적으로 중요한 열대풍토병 병원체의 하나인 열대리슈마니아의 핵형에 영향을 줄 것으로 기대되는 인자와 그 효과를 관찰하고자 하였다. 토기의 혈액을 포함한 N.N.N. 배지에서 유지하고 있는 열대리슈마니아(Leishmania major)의 promastigote를 열쇽. 약제 첨가 자외선 조사 및 감마선을 이용한 방사선 조사를 여러 가지 방법으로 시행하고 주기변동전기영동(pulsed field gradient gel electrophoresis)을 이용하여 핵형의 변동 여부를 관찰하였다 그 결과 여러 방식에 의한 열쇽과 약제 처리 및 자외선 조사에 따른 핵형의 변화가 없었다 그러나 방사선 조사군에서는 50 Gy 이상 조사한 군에서 1 mesa base pair(Hb) 크기에 있는 염색체부터 소실되기 시작하여 방사선 조사량이 증가함에 따라서 250-500 Kb의 작은 염색체도 파괴되어 500 Gy 이상 군에서는 뚜렷한 염색체 분획이 없이 젤 하단 200 Kb 크기 아래 부분에 몰려 있었다. 이러한 소견은 방사선에 의하여 염색체가 불규칙하게 파손된 것을 의미한다고 하겠다. 방사선을 300 Gy까지 조사한 충체는 계대 배양이 가능하였고. 이들은 원래의 핵형을 유지하였다. 방사선조사 후에 배양된 충체는 염색체가 파괴되지 않았거나 부분적인 손상 후에 DNA 재결합에 의해 원상회복된 것으로 판단된다. 열대리슈마니아의 핵형은 일시적인 자극에 의하여 쉽게 변형되지 않는 안정된 것임을 확인하였다.

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알루미늄 산화물 절연막에 하프늄의 첨가가 자기터널접합의 특성에 미치는 영향 (Effect of Insertion of Hf layer in Al oxide tunnel barrier on the properties of magnetic tunnel junctions)

  • 임우창;배지영;이택동;박병국
    • 한국자기학회지
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    • 제14권1호
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    • pp.13-17
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    • 2004
  • 알루미늄 산화물 절연막에 하프늄의 첨가가 미치는 영향에 관해서 연구하였다. 하프늄을 첨가할 경우 자기저항이 증가하고 자기저항의 온도의존도와 바이어스 전압의존도가 감소함을 관찰하였다. 이는 하프늄의 첨가가 알루미늄 산화물의 결함의 감소를 유발하기 때문이라 판단된다. 하프늄의 첨가된 알루미늄 산화물의 미세구조를 분석한 결과 하프늄이 알루미늄과 혼합됨이 관찰 되었다. 알루미늄과 하프늄의 혼합 금속을 절연막 형성을 위한 금속으로 사용한 결과 하프늄의 첨가된 알루미늄과 동일한 결과를 얻었다. 이로부터 하프늄이 알루미늄과 혼합하면서 절연막 내의 결함을 감소시키고 그에 따른 자기저항의 증가와 자기저항의 온도의존도와 바이어스 전압의존도를 감소시키는 결과를 가져온 것으로 판단된다.

밀리미터파 GaAs 건 다이오드의 설계 및 제작 (Design and fabrication of millimeter-wave GaAs Gunn diodes)

  • 김미라;이성대;채연식;이진구
    • 대한전자공학회논문지SD
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    • 제44권8호
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    • pp.45-51
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    • 2007
  • [ $1.6{\mu}m$ ]의 활성층을 가지는 planar형태의 94 GHz graded-gap injector GaAs 건 다이오드를 설계, 제작하였다. 이 다이오드는 반 절연 기판에 성장된 에피 구조를 바탕으로 메사 식각, 오믹 금속 접촉형성 및 overlay metalization의 주요 공정을 통하여 두가지 형태의 planar 구조로 제작되었다. 제작된 건 다이오드의 부성저항 특성을 anode와 cathode 금속전극들의 배치를 달리 한 두 소자 구조에서 고찰하였고 graded-gap injector의 역할을 순방향과 역방향에서의 직류거동으로부터 살펴보았다. 결과적으로, 금속전극의 배치에 있어서, cathode와 anode 전극사이의 거리가 감소된 소자 구조에서 증가된 peak 전류와 breakdown 전압, 그리고 감소된 문턱전압을 얻었다.

비폐쇄성 무정자증의 치료 (The treatment of Non-obstructive Azoospermia)

  • 서주태;박용석;김종현;이유식;전진현;이호준;손일표;강인수;전종영
    • Clinical and Experimental Reproductive Medicine
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    • 제24권1호
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    • pp.95-99
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    • 1997
  • Irreparable obstructive azoospermic patients can be treated successfully with microsurgical epididymal sperm aspiration(MESA) or testicular sperm extraction (TESE) by intracytoplasmic sperm injection(ICSI). Obstructive azoospermic patients generally have normal spermatogenesis. The aim of this study was to see if any spermatozoa could be retrieved from non-obstructive azoospermia and to assess the efficacy of ICSI with TESE in germinal failure. 42 non-obstructive azoospermic patients revealed no spermatozoa at all in their ejaculates, even after centrifuge. The histology of 42 patients revealed 15 Sertoli cell only Syndrome, 4 maturation arrest and 23 severe hypospermatogenesis. All patients underwent extensive multiple testicular biopsy for sperm retrieval. These patients were scheduled for ICSI using testicular spermatozoa. In 25 out of 42 non-obstructive azoospermic patients, spermatozoa were recovered from multiple testicular biopsy specimen and 11 ongoing pregnancies were achieved. There are usually some tiny foci of spermatogenesis which allow TESE with ICSI in non-obstructive azoospermia. Also these patients may have sufficient sperm in the testes for ICSI, despite extremely high FSH level and small testes.

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High Performance of SWIR HgCdTe Photovoltaic Detector Passivated by ZnS

  • ;안세영;서상희;김진상
    • 센서학회지
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    • 제13권2호
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    • pp.128-132
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    • 2004
  • Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

Search for the preformed-pair state in the pseudogap regime above T$_c$ using c-axis tunneling in Bi$_2$Sr$_2$CaCu$_2$O$_{8+d}$ single crystals

  • Chang, Hyun-Sik;Lee, Hu-Jong;Oda, MigaKu;Jang, Eue-Soon;Ido, Masayuki;Choy, Jin-Ho
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.85-85
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    • 2000
  • The normal state of high-Tc superconducting materials has been believed to contain important clues to finding the correct mechanism of the high-Tc superconductivity. One example is the existence of pseudogap in the normal state even above Tc, as observed in various measurements such as photoemission spectroscopy and tunneling conductance. In this pseudogap regime the existence of preformed pairs only with local phase coherence has been debated. Recently Choi, Bang, and Campbell[1] have proposed the occurrence of the zero-bias conductance enhancement due to Andreev quasiparticle reflection from the preformed pairs even with the local phase coherence. In this study we examine the zero-bias enhancement of the differential conductance near or slightly above Tc, using c-axis tunneling in mesa structure of Bi2Sr20a0u208+d single crystals. In slightly overdoped samples zero-bias conductance enhancement (ZBCE) has been observed over a range of 2 K above Tc. In contrast, in underdoped samples with Tc${\sim}$72K the ZBCE appears over a range of 5-6 K above Tc, a much wider temperature range than in overdoped samples. This result may pose as positive signs of the existence of prefurmed pairs in the normal state of high- Tc superconducting materials.

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Energy-band model on photoresponse transitions in biased asymmetric dot-in-double-quantum-well infrared detector

  • 신현욱;최정우;김준오;이상준;노삼규;이규석
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.234-234
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    • 2010
  • The PR transitions in asymmetric dot-in-double-quantum-well (DdWELL) photodetector is identified by bias-dependent spectral behaviors. Discrete n-i-n infrared photodetectors were fabricated on a 30-period asymmetric InAs-QD/[InGaAs/GaAs]/AlGaAs DdWELL wafer that was prepared by MBE technique. A 2.0-monolayer (ML) InAs QD ensemble was embedded in upper combined well of InGaAs/GaAs and each stack is separated by a 50-nm AlGaAs barrier. Each pixel has circular aperture of 300 um in diameter, and the mesa cell ($410{\times}410\;{\mu}m^2$) was defined by shallow etching. PR measurements were performed in the spectral range of $3{\sim}13\;{\mu}m$ (~ 100-400 meV) by using a Fourier-transform infrared (FTIR) spectrometer and a low-noise preamplifier. The asymmetric photodetector exhibits unique transition behaviors that near-/far-infrared (NIR/FIR) photoresponse (PR) bands are blue/red shifted by the electric field, contrasted to mid-infrared (MIR) with no dependence. In addition, the MIR-FIR dual-band spectra change into single-band feature by the polarity. A four-level energy band model is proposed for the transition scheme, and the field dependence of FIR bands numerically calculated by a simplified DdWELL structure is in good agreement with that of the PR spectra. The wavelength shift by the field strength and the spectral change by the polarity are discussed on the basis of four-level transition.

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전문대학 도서관과(圖書館科)의 교육과정에 관한 연구 (A Study on the Curriculum of Library and Information Science in Junior Colleges)

  • 김명옥
    • 한국문헌정보학회지
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    • 제10권
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    • pp.71-120
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    • 1983
  • In this study, a model curriculum for the Library and Information Science programs in Junior Colleges is presented by comparing those curricula of the Republic of Korea, the United States of America, England and Japan. In Korea, 80 credits are required for graduate of Junior College and 60 credits of that total credits are for major courses. At Toshokan Danki Daikagu in Japan, 73 credits are opened for the Department of Library Science and 87 credits for the Department of Library and Information Science respectively. In the United States of America, 30 credits for major courses out of 90 total credits are opened at Lansing Community College and 24 credits for major courses out of 60-64 credits at Mesa Community College distinctively. On the basis of the various analyses, the following principles are applied in designning the model curriculum; (1) Possibly 3 credits per subject are assigned, (2) Major credits for graduate are 60-64 credits including possible optional subjects, (3) 20 percents of those 60-64 credits shall be applied for electives, so that 72-78 credits are assigned for major, (4) In order to combine theory and practice, and to select practice areas as required major, the ratio between required and elective must be adjusted, (5) In order to avoid duplication of subject, adequate individuality must be provided, (6) The Information Science areas must be dealt with in Library Science since computer systems are being rapidly adopted in libraries and the education for resources of materials and foreign languages are also important for successful fulfillment of mediator's roles between materials and users. Therefore the following model curriculum is suggested; 31 credits in 11 subjects for required major, 46 credits in 18 subjects for electives in major, total 77 credits for 29 subjects are established, and it includes such areas as material organization, foreign languages, resources of materials, library management, information science, fundamental studies, services and practice.

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Demonstration of Nonpolar a-plane Light Emitting Diodes on r-plane Sapphire Substrate by MOCVD

  • Son, Ji-Su;Baik, Kwang-Hyeon;Song, Hoo-Young;Kim, Ji-Hoon;Kim, Tae-Geun;Hwang, Sung-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.147-147
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    • 2011
  • High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

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