• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.380-381
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.83-84
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• 2006

Chemical mechanical polishing (CMP) process has been attracted as an essential technology of multi-level interconnection. However, the COO (cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. Also, the addition effects of $MnO_2$ abrasives and the diluted silica slurry (DSS) on CMP performances were evaluated. Finally, we have investigated the possibility of new abrasive for the oxide CMP application.