• 제목/요약/키워드: M2M device

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Fabrication and Property of Water Level and Temperature Sensor for Medical Cooling System Using a Highly Sensitive GMR-SV Device (거대자기저항 스핀밸브 소자를 이용한 의료용 냉각기 수위 및 수온 센서의 제작과 특성)

  • Park, Kwang-Jun;Choi, Jong-Gu;Lee, Sang-Suk;Lee, Bum-Ju
    • Journal of the Korean Magnetics Society
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    • v.21 no.1
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    • pp.32-36
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    • 2011
  • We fabricated a sensor for measuring the water level and water temperature using GMR-SV (giant magnetoresistance-spin valve) device, simultaneously. It could be applied to the medical cooling system of the potassium titanylphosphate KTP) laser system for the therapy of a benign prostatic hyperplasia. The middle point of GMR-SV device was set to the near position of a high magnetic sensitivity with 2.8%/Oe. The sensitivity for the water level and water temperature of the fabricated sensor were $400\;m{\Omega}/mm$ and $100\;m{\Omega}/^{\circ}C$, respectively.

The Properties of Hole Injection and Transport Layers on Polymer Light Emitting Diode (정공 주입층 및 수송층에 따른 고분자 유기발광다이오드의 특성 연구)

  • Shin, Sang-Baie;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.4
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    • pp.37-42
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    • 2007
  • We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

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The test methods of Lifting performance and Environmental resistance tests using power assist device for a fireman to rescue humans (인명구조용 소방대원 근력지원장치의 양중성능 및 내환경 시험 방법)

  • Lee, Minsu;Park, Chan;Lee, Seonmin;Lee, Dongeun
    • Journal of the Society of Disaster Information
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    • v.13 no.3
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    • pp.358-365
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    • 2017
  • As the damage caused by disasters increases rapidly around the world, it is necessary to develop the technology for equipment to reduce human injury. Therefore in the support of fire safety and 119 rescue and rescue technology research and development project, in the "Development of a power assist device for a fireman to rescue humans(2015 ~ 2018)" for life saving restoration, we are developing equipment that satisfies the lifting performance considering the disaster environment and the disaster response scenario(Amount of load over 100 kg, height of over 1 m, height over middle 60 cm, speed over 0.2 m/s). In this study, we propose a lifting performance and environmental test method to evaluate the usefulness of the power-assisted device and analyze and verify detailed specifications of the device through dynamics analysis of the lifting performance test. This study suggests that the proposed test method can be applied practically to evaluate whether a stable performance of a power-assisted device is achieved.

Simulation of optimal ion implantation for symmetric threshold voltage determination of 1 ${\mu}m$ CMOS device (1 ${\mu}m$ CMOS 소자의 대칭적인 문턱전압 결정을 위한 최적 이온주입 시뮬레이션)

  • Seo, Yong-Jin;Choi, Hyun-Sik;Lee, Cheol-In;Kim, Tae-Hyung;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.286-289
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    • 1991
  • We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

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Fabrication and Characterization of Red OLED on the Plastic Substrate (플라스틱 기판상에 적색 OLED 제작과 특성 연구)

  • Jeong, Jin-Cheol;Kim, Hyeong-Seok;Kim, Won-Ki;Jang, Ji-Geun
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.4
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    • pp.15-19
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    • 2009
  • A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

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The characteristics of the electroluminescent devices using Ir$(ppy)_3$ (Ir$(ppy)_3$를 발광물질로 이용한 EL소자의 특성분석)

  • Kim, Jun-Ho;Kim, Yun-Myoung;Ha, Yun-Kyoung;Kim, Young-Kwan;Kim, Jung-Soo
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.437-439
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    • 2000
  • The internal quantum efficiency of EL devices using fluorescent organic materials is limited within 25% because of the triplet excitons which can hardly emit light. So there has been considerable interest in finding ways to obtain light emission from triplet excitons. One approach has been to add phosphorescent compounds to one of the layers in an EL device. Then triplet excitons can transfer to these phosphorescent molecules and emit light. In this study, multilayer organic light-emitting devices with phosphorescent emitter, tris (2-phenylpyridine)iridium ($Ir(ppy)_3$) were prepared. The device exhibited power luminous efficiency of 1.07 1m/W at the luminance of $61.6\;cd/m^2$ diriven at the voltage of 9 V and current density of $1.9mA/cm^2$. At the luminance of $100\;cd/m^2$, the luminous efficiency was obtained 1.05 lm/W with the voltage of 9.5 V and the corrent density of $2.8\;mA/cm^2$.

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Beta Gamma Survey Meter (베타 및 감마선 계측용 서어베이 미터)

  • 박인용;이병선
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.8 no.1
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    • pp.1-8
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    • 1971
  • A survey meter which is used a G-M counter sensitive to beta and gamma radiation is studied. This device is completely transistorized, operated with battery, and can be read directly the 3 full-scale meter range: 2.5, 25 and 250 MR/HR respectively. The collector-coupled monostabel multivibrator consisting of a counting-rate meter circuit, and the astable blocking oscillator consisting of a dc-de converter for power supply are analyzed and derived the design dquations. To improve the resolving time of the G-M counter the device is designed to be triggered by low pulse in the order of 0.5v.

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TLP Properties Evaluation of ESD Protection Device of GGNMOS Type for Conventional CMOS Process (Conventional CMOS 공정을 위한 GGNMOS Type의 ESD 보호소자의 TLP 특성 평가)

  • Lee, Tae-Il;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.875-880
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    • 2008
  • In this paper, we deal with the TLP evaluation results for GGNMOS in ESD protection device of conventional CMOS process. An evaluation parameter for GGNMOS is that repeatability evaluation for reference device($W/L=50\;{\mu}m1.0\;{\mu}m$) and following factors for design as gate width, number of finger, present or not for N+ gurad -ring, space of N-field region to contact and present or not for NLDD layer. The result of repeatability was showed uniformity of lower than 1 %. The result for design factor evaluation was ; 1) gate width leading to increase It2, 2) An increase o( finger number was raised current capability(It2), and 3) present of N+ gurad-ring was more effective than not them for current sink. Finally we suggest the optimized design conditions for GGNMOS in evaluated factor as ESD protection device of conventional CMOS process.

Identification of operating parameters in auto-discharging filter system for treatment of urban storm water (자동방류가 가능한 여과형 비점오염처리장치의 운전인자 도출)

  • Kim, Sun-Hee;Gwon, Eun-Mi;Pak, Sung-Soon;Joh, Seong-Ju;Lim, Chea-Hoan;Kang, Seon-Hong
    • Journal of Korean Society of Water and Wastewater
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    • v.24 no.4
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    • pp.377-386
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    • 2010
  • To identify operating parameters of the up-flow filtering system, which is available to discharge filtering residue after the rain, developed for treatment of urban storm runoff, lab scale test was carried out. Removal efficiency of SS was 68.7%, 62.2%, and 58.6% at the area roading rate of 2.46m/h, 4.68m/h, and 10m/h, respectively, filtering device is desirable to operate at the lower than 4.68m/h of area roading rate to get higher level of 60% SS removal efficiency. The removal efficiency of SS was 57.1% ~ 68.7% at the raw water SS of 100mg/L ~ 600mg/L, and the SS in treated water was maintained at the constant level through the elapsed time. It is indicate that filtering device can guarantee a certain level of effluent water quality at various raw water quality. The removal efficiency of SS to the depth of filter media was 68.3%, 78.6% at the filter depth of 10 cm, 20cm respectively. The final treated water quality was showed 30.2mg/L of CODMn, 1.60mg/L of TN and 0.25mg/L of TP. The average removal efficiencies by filtering device developed in this research were recorded slightly lower levels than other research. The main reason of these results were the first, the filter depth of the media used in this test was shallow, the second, the kind of filter media in discharge port of residue. More research to kind of filter media, filter packing rate, select of media for residue discharge port should be go on to produce optimum operating condition. The result of this study would be valuable for the application of filtration device to control of urban storm water.

Real-time Reefer Container Control Device Using M2M Communication (M2M통신을 이용한 실시간 냉동컨테이너 제어 장비)

  • Moon, Young-Sik;Choi, Sung-Pill;Lee, Eun-Kyu;Kim, Tae-Hoon;Lee, Byung-Ha;Kim, Jae-Joong;Choi, Hyung-Rim
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.9
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    • pp.2216-2222
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    • 2014
  • A recent trend of increasing container traffic volume using reefer container demands continuous management of reefer container in transit. However, reefer containers can only be monitored at terminal or in ship during marine transportation instead of throughout entire section. In the case of inland transportation section using truck or train, monitoring is not possible currently. The reason is because the reefer container monitoring method using PCT recommended by IMO and conventional monitoring methods using TCP/IP, RFID communication require establishing additional communication infrastructure. This paper will propose a new reefer container control device that not only solves these problems and monitors during inland transportation section but also controls reefer container. Using data port attached to every reefer container, the proposed device collects the information of reefer container and using M2M communication technology, it transmits information to server without the need to establish additional communication infrastructure. In addition, it can control the operational status of reefer container upon receiving control information set in server such as temperature of reefer container.