• Journal of the Korea Convergence Society
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• v.9 no.9
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• pp.183-189
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• 2018

This study deals with the design and development of imaging optics having 24mm focal length for MWIR ($3{\sim}5{\mu}m$) with two symmetrical lenses facing each other. We used CodeV in our optical design, and we performed the optimization process to have the resolution and angle of view satisfying the user's requirements. The materials of lenses were limited to two types, including KCIR035 with a refractive index of 1.7589, developed in Korea. The optical system designed in this way consists of two aspherical lenses made of KCIR035 material having the same shape and one spherical lens made of Si. Here, the arrangement of the two aspherical lenses is characterized by having a symmetrical structure facing each other. And this optical system has a resolution of MTF value of 0.35 or more at a line width of 20 lp / mm. Therefore, it is considered that this optical system has the capability to be applied to a thermal imaging camera using a $206{\times}156$ array MWIR detection device having a pixel size of $25{\mu}m$.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.2
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• pp.279-290
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• 2022

A superconducting fault current limiter(SFCL) is a power device that exploits superconducting transition to control currents and enhances the flexibility, stability and reliability of the power system within a few milliseconds. With a high phase transition speed, high critical current densities and little AC loss, high-temperature superconducting (HTS) wires are suitable for a resistive-type SFCL. However, HTS wires due to the lack of optimization research are rather inefficient to directly apply to a fault current limiter in terms of the design and capacity, for the existing method relied the characteristics. Therefore, in order to develop a suitable wire for an SFCL, it is necessary to enhance critical current uniformity, select optimal stabilizer materials and conducted research on the development of uniform stabilizer layering technology. The high temperature superconducting wires manufactured by this study get an average critical current of 804 A/12mm-width at the length of 710m; therefore, conducted research was able to secure economic performance by improving efficiency, reducing costs, and reducing size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.955-960
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• 2012

We fabricated piezoelectric unimorph cantilever generators (UCG) using $Pb(Zr_{0.54}Ti_{0.46})O_3$ + 0.2 wt% $Cr_2O_3$ + 1.0 wt% $Nb_2O_5$ (PZCN) piezoelectric thick films, which were produced by a tape casting method. The PZCN thick films were tailored with same width and thickness but different lengths from 7.7 to 57.7 mm in order to evaluate optimized UCG for energy harvesting device applications. When the length of PZCN film was increased, the resonance frequency of UCG was slightly increased from 7 Hz to 8 Hz, which could be due to enlarged area of the highly stiff piezo-ceramic film. However, the output power was proportionally increased with the length of PZCT film and it reached 4.68 mW (1.221 $mW/cm^3$) when the film's length was 57.7 mm under 25 g of tip mass at 8 Hz, which is sufficient for micro-scale device applications.

• Journal of Bio-Environment Control
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• v.11 no.3
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• pp.101-107
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• 2002

This study was carried out to improve the performance of heat recovery device attached to exhaust gas flue connected to combustion chamber of greenhouse heating system. Three different units were prepared far the comparison of heat recovery performance; A-type is exactly the same with the typical one fabricated for previous study of analyzing heat recovery performance in greenhouse heating system, other two types (B-type and C-type) modified from the control unit are different in the aspects of airflow direction (U-turn airflow) and pipe arrangement. The results are summarized as follows ; 1. In the case of Type-A, when considering the initial cost and current electricity fee required for system operation, it was expected that one or two years at most would be enough to return the whole cost invested. 2. Type-B and Type-C, basically different with Type-A in the aspect of airflow pattern, are not sensitive to the change of blower capacity with higher than 25m$^3$.min$^{-1}$ . Therefore, heat recovery performance was not improved so significantly with the increment of blower capacity. This was assumed to be that air flow resistance in high air capacity reduced the heat exchange rate as well. Never the less, compared with control unit, resultant heat recovery rate of Type-B and Type-C was improved by about 5％ and 13％, respectively 3. Desirable blower capacity of these heat recovery units experimented were expected to be about 25m$^3$.min$^{-1}$ , and at the proper blower capacity, U-turn airflow units showed better heat recovery performance than control unit. But, without regard to the type of heat recovery unit, it was recommended that comprehensive consideration of system's physical factors such as pipe arrangement density, unit pipe length and pipe thickness, etc., was required for the optimization of heat recovery system in the aspects of not only energy conservation but economic system design.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2001.10a
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• pp.281-285
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• 2001

This study was carried out to improve the performance of heat recovery device attached to exhaust gas flue connected to combustion chamber of greenhouse heating system. Three different units were prepared for the comparison of heat recovery performance; AB-type(control unit) is exactly the same with the typical one fabricated for previous study of analyzing heat recovery performance in greenhouse heating system, other two types(C-type and D-type) modified from the control unit are different in the aspects of airflow direction(U-turn airflow) and pipe arrangement. The results are summarized as follows; 1. In the case of Type-AB, when considering the initial cost and current electricity fee required for system operation, it is expected that one or two years at most would be enough to return the whole cost invested. 2. Type-C and Type-D, basically different with Type-AB in the aspect of airflow pattern, are not sensitive to the change of blower capacity with higher than $25\;m^{3}/min$. Therefore, heat recovery performance was not improved so significantly with the increment of blower capacity. This is assumed to be that air flow resistance in high air capacity reduces the heat exchange rate as well. Never the less, compared with control unit, resultant heat recovery rate in Type-C and Type-D were improved by about 5% and 13%, respectively. 3. Desirable blower capacity for these heat recovery units experimented are expected to be about $25\;m^{3}/min$, and at the proper blower capacity, U-turn airflow units showed better heat recovery performance than control unit. But, without regard to the type of heat recovery unit, it is recommended that comprehensive consideration of system's physical factors such as pipe arrangement density, unit pipe length and pipe thickness, etc., are required for the optimization of heat recovery system in the aspects of not only energy conservation but economic system design.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.111-121
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• 2012

In this paper, a poly-Si thin film transistor with ${\sim}0.5{\mu}m$ gate length was fabricated and its electrical characteristics are optimized. From the results, it was verified that making active region with larger grain size using low temperature annealing is an efficient way to enhance the subthreshold swing, drain-induced barrier lowering and on-current characteristics. A SONOS flash memory was fabricated using this poly-Si channel process and its performances are analyzed. It was necessary to optimize O/N/O thickness for the reduction of electron back tunneling and the enhancement of its memory operation. The optimized device showed 2.24 V of threshold voltage memory windows which coincided with a well operating flash memory.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.5-12
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• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.175-180
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• 2006

A single sideband(SSB) modulator operating at 5.5 GHz was fabricated by polarization inversion techniques. The dimension of domain inversion in a $LiINbO_3$ Mach-Zehnder structure was precisely controlled so that the RF signal applied on two Mach-Zehnder arms gives rise to $90^{\circ}$ effective phase difference. The single sideband suppression was maximized by optimization of the polarization status of the optical input and by the DC bias value. The fabricated device showed the center frequency of 5.8 GHz and the maximum sideband suppression of 33dB, where the bandwidth of 15 dB sideband suppression ranged over a 2.5 GHz span. The optical phase delay could be regulated by the DC bias voltage, fur example, the enhanced optical modulation sideband was distinctively switched from the upper sideband to the lower sideband by changing the DC bias voltage from 1.9 V to -10.6 V.