• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.176-184
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• 1996

To overcome the drawbacks of conventional LDMOSFETs, we propose RESURF EDMOSFETs which can be adapted in varous circuit applications, be driven without charge pumping circuity and thowe threshold voltage can be adjusted. The devices have the diffused drift region formed by a high tmperature process before the gate oxidaton. After the polysilicon gate electrode formation, a fraction of the drift region around the gate edge is opened for supplemental self-aligned ion implantation to obtain self-aligned drift region. This leads to a shorter gate length and desirable drift region junction contour under the gate edge for minimum specific-on-resistance. In additon, a and maximize the breakdown voltage. Also, by biasing the metal field plate, we can reduce the specific-on-resistance further. The devices are optimized by using the TSUPREM-4 process simulator and the MEDICI device simulator. The optimized devices have the breakdwon voltage and the specific-on-resistance of 101.5V and 1.14m${\Omega}{\cdot}cm^{2}$, respectively for n-channel RESURF EDMOSFET, and 98V and 2.75m.ohm..cm$^{2}$ respectively for p-channel RESURF EDMOSFET. To check the validity of the simulations, we fabricated n-channel EDMOSFETs and confirmed the measured breakdown voltage of 97V and the specific-on-resistance of 1.28m${\Omega}{\cdot}cm^{2}$. These results are superior to those of any other reported power devices for smart power IC applications.

• Journal of Information Display
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• v.7 no.2
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• pp.26-30
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• 2006

Insertion of a thin lithium fluoride (TLF) layer between an emitting layer (EML) and an electron transporting layer has resumed in the developement of a highly efficient and bright organic light-emitting diode (OLED). Comparing with the performance of the device as a function of position with the TLF layer in tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$, we propose the optimal position for the TLF layer in the stacked structure. The fabricated OLED shows a luminance efficiency of more than 20 cd/A, a power efficiency of 12 Im/W (at 20 mA/$cm^{2}$), and a luminance of more than 22 000 cd/$m^{2}$ (at 100 mA/$cm^{2}$), respectively. We suggest that the enhanced performance of the OLED is probably attributed to the improvement of carrier balance to achieve a high level of recombination efficiency in an EML.

• ETRI Journal
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• v.34 no.5
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• pp.690-695
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• 2012

We investigate the light-emitting performances of blue phosphorescent organic light-emitting diodes (PHOLEDs) with three different electron injection and transport materials, that is, bathocuproine(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) (Bphen), 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (Tm3PyPB), and 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy), which are partially doped with cesium metal. We find that the device characteristics are very dependent on the nature of the introduced electron injection layer (EIL) and electron transporting layer (ETL). When the appropriate EIL and ETL are combined, the peak external quantum efficiency and peak power efficiency improve up to 20.7% and 45.6 lm/W, respectively. Moreover, this blue PHOLED even maintains high external quantum efficiency of 19.6% and 16.9% at a luminance of $1,000cd/m^2$ and $10,000cd/m^2$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.568-573
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• 2006

We have synthesized new blue light emitting random copolymers, poly(9,9'-n-dioctylfluorene-co-perfluorobenzene-1,4-diyl)s (PFFBs), via Ni(0)-mediated coupling reactions. The weight-average molecular weights ($M_w$) of the PFFB copolymers ranged from 9,000 to 15,000. The PFFB copolymers dissolved in common organic solvents such as THF and toluene. The PL emission peaks of the PFFB copolymers were at around 420, 440, and 470 nm. EL devices were fabricated in ITO/PEDOT/polymer/Ca/Al configurations using these polymers. These EL devices were found to exhibit pure blue emission with approximate CIE coordinates of (0.15, 0.11) at $100cd/m^2$. The blue emissions of these devices might be due to the restriction of the polymer chains to aggregation by introducing of the highly electronegative fluorine moieties. The maximum brightnesses of the PFFB copolymer devices ranged from 140 to $3600cd/m^2$ with maximum efficiencies from 0.2 to 0.6 cd/A. The enhanced efficiency of the PFFB (8/2) copolymer device results from the inhibition of excimer formation by the introduction of the electronegative fluorine moieties into the copolymers.

• Journal of Electrical Engineering and Technology
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• v.2 no.2
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• pp.274-279
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• 2007

This study focuses on the enhancement of maskless photolithography as well as the peptide synthesis application with single crystalline silicon micromirrors. A single crystalline silicon micromirror array has been designed and fabricated in order to improve its application to the peptide synthesis. A micromirror rotates about ${\pm}\;9^{\circ}$ at the pull-in voltage, which can range from 90.7 V to 115.1 V. A $210\;{\mu}m-by-210\;{\mu}m$ micromirror device with $270\;{\mu}m$ mirror pitch meets the requirements of an adequately precise separation for peptide synthesis. Synthetic 16 by 16 peptide array corresponds to the same number of micromirrors. The large size of peptide pattern and the separation facilitate biochip experiments using fluorescence assay. The peptide pattern has been synthesized on the GPTS-PEG200 surface with BSA-blocking and thereupon the background was acetylated to reject non-specific bindings. Hence, an averaged slope at the pattern edge has been distinguishably improved in comparison to patterning results from an aluminum micromirror.

• Nuclear Engineering and Technology
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• v.37 no.4
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• pp.395-400
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• 2005

An environmental radon monitoring system, comprising a radon-cup, an etching system, and a track counting system, was constructed. The radon cup is a cylindrical chamber with a radius of 2.2 cm and a height of 3.2 cm in combination with a CR-39 detector. Carbon is impregnated in the bodies of the detector chamber to avoid problem of an electrostatic charge. The optimized etching condition for the CR-39 exposed to a radon environment turned out to be a 6 N NaOH solution at 70^{\circ}$ over a 7hour period. The bulk etch rate under the optimized condition was $1.14{\pm}0.03\;{\mu}m\;h^{-1}$. The diameter of the tracks caused by radon and its progeny were found to be in the range of $10\~25\;{\mu}m$ under the optimized condition. The track images were observed with a track counting system, which consisted of an optical microscope, a color charged couple device (CCD) camera, and an image processor. The calibration factor of this system is obtained to be $0.105{\pm}0.006$ tracks $cm^2$ per Bq $m^{-3}$ d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.32-35
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• 2011

Top-emission device has a merit of high aperture ratio and narrow emission spectrum compared to that of bottom-emission one. Emission spectra of top-emission organic light-emitting diodes depending on a layer thickness and view angle were analyzed using a theory of microcavity. Device structure was manufactured to be Al (100 nm)/TPD/$Alq_3$/LiF (0.5 nm)/Al (2 nm)/Ag (30 nm). N,N'-diphenyl-N,N'- di (m-tolyl)-benzidine (TPD) and tris (8-hydroxyquinoline) aluminium (Alq3) were used as a hole-transport layer and emission layer, respectively. And a thickness of TPD and Alq3 layer was varied in a range of 40 nm~70 nm and 60 nm~110 nm, respectively. Angle-dependent emission spectrum out of the device was measured with a device fixed on a rotating plate. Since the top-emission device has a property of microcavity, it was observed that the emission spectrum shift to a longer wavelength region as the organic layer thickness increases, and to a shorter wavelength region as the view angle increases. Layer thickness and view-angle dependent emission spectra of the device were analyzed in terms of microcavity theory. A reflectivity of semitransparent cathode and optical path length were deduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.808-812
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• 2015

Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Journal of the Korean Solar Energy Society
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• v.28 no.2
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• pp.50-57
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• 2008

This study intends to evaluate the effect on indoor environment(annual thermal load, sunshine)by the application of the movable horizontal shading device on summer and winter season. For these purpose, we supposed the models which are composed of the several horizontal shading devices. Then we analyzed the simulation using the IES5.5.1 and Seoul weather data. The results of this study are as follows: 1) The proper length, angle of horizontal shading device is 2.1m, 28 degree, respectively. 2) The decreasing rate of the annual load of the Movable Horizontal Shading Model(MHSM) in comparison with the No Shading Model(NSM) & Conventional Horizontal Shading Model(CHSM) is 31.11%, 6.63% respectively. 3) The decrease of sunshine of the MHSM on summer season is effective the alleviation of visual displeasure. On the other hand, the increase of sunshine of the MHSM on winter season is effective the psychological comfort. Further study is to be required the sensitivity analysis on the various shading length for the realistic proper shading length.