• Radiation Oncology Journal
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• v.28 no.4
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• pp.231-237
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• 2010

Purpose: We investigated the effect of location changes in the inferior border of the belly board (BB) aperture by adding a bladder compression device (BCD). Materials and Methods: We respectively reviewed data from 10 rectal cancer patients with a median age 64 years (range, 45~75) and who underwent computed tomography (CT) simulation with the use of BB to receive pelvic radiotherapy between May and September 2010. A CT simulation was again performed with the addition of BCD since small bowel (SB) within the irradiated volume limited boost irradiation of 5.4 Gy using the cone down technique after 45 Gy. The addition of BCD made the inferior border of BB move from symphysis pubis to the lumbosacral junction (LSJ). Results: Following the addition of BCD, the irradiated volumes of SB and the abdominopelvic cavity (APC) significantly decreased ($174.3{\pm}89.5mL$ vs. $373.3{\pm}145.0mL$, p=0.001, $1282.6{\pm}218.7mL$ vs. $1,571.9{\pm}158mL$, p<0.001, respectively). Bladder volume within the treated volume increased with BCD ($222.9{\pm}117.9mL$ vs. $153.7{\pm}95.5mL$, p<0.001). The ratio of irradiated bladder volume to APC volume with BCD ($33.5{\pm}14.7%$) increased considerably compared to patients without a BCD ($27.5{\pm}13.1%$) (p<0.001), and the ratio of irradiated SB to APC volume decreased significantly with BCD ($13.9{\pm}7.6%$ vs. $24.2{\pm}10.2%$, p<0.001). The ratios of the irradiated SB volume and irradiated bladder volume to APC volume negatively correlated (p=0.001). Conclusion: This study demonstrated that the addition of BCD, which made the inferior border of BB move up to the LSJ, increased the ratio of the bladder to APC volume and as a result, decreased the irradiated volume of SB.

• Journal of IKEEE
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• v.19 no.3
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• pp.440-446
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• 2015

This study has examined susceptibility of LNA(Low Noise Amplifier) due to Front-Door Coupling under Narrow-Band high power electromagnetic wave. M/DFR(Malfunction/Destruction Failure Rate) was measured to investigate the diagnostic of IC test. In addition, decapsulation analysis was used to understand the inside of the chip state in LNA devices. The experiments is employed as an open-ended waveguide to study the destruction effects of LNA using a 2.45 GHz Magnetron as a high power electromagnetic wave. The susceptibility level of LNA was assessed by electric field strength, and its failure modes were observed. The malfunction of LNA device has showed as the type of self-reset and power-reset. The electric field strength of malfunction threshold is 524 V/m and 1150 V/m respectively. Also, he electric field of destruction threshold is 1530 V/m. Three types of damaged LNA were observed by decapsulation analysis: component, onchipwire, and bondwire destruction. Based on these results, the susceptibility of the LNA can be applied to a database to help elucidate the effects of microwaves on electronic equipment.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.150.2-150.2
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• 2015

In this study, we analyzed the electric and optical characteristics by using various deposition rate ($0.5{\AA}$, $1.0{\AA}$ and $1.5{\AA}/s$) in order to enhance the performance in organic light-emitting devices (OLED). The organic multi-layer structures were deposited with NPB ($500{\AA}$ as hole transport layer), Alq3 ($600{\AA}$ as electron transport layer and emission layer) and LiF ($8{\AA}$ as electron injection layer) via SUNIC PLUS200 on Glass/ITO substrates. In this experiment, we examined the relationship between porous state of organic deposition and mobility of the organic materials. Among the three deposition rates, $0.5{\AA}/s$ achieved the highest performance of (10,786cd/m2, 4.387cd/A) comparing with that of $1{\AA}/s$ (7,779cd/m2, 3.281cd/A) and $1.5{\AA}/s$ (5,167cd/m2, 2.693cd/A). We confirmed that low deposition rate helps to arrange organic materials densely and to move easily another atomic location using inter-chain transporting by orbital overlap.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.49 no.1
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• pp.12-19
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• 2012

Recently, the market of skin-care device has been steadily growing up. In this paper, we tried to develop a personal compound stimulus device more competitive than existing products. As the compound stimulus, biochemical stimulus of herbal extraction fluid, thermal stimulus of plate-shaped carbon fiber heater, and optical stimulus of near infrared LED were selected. By some evaluation tests, the thermal stimulation part and the optical stimulation part were found to be developed properly. Additionally, the efficacy of the mixed stimulus of thermal and optical stimulation was tested in C2C12 mouse myoblast. Through RT-PCR analysis, it was found that, by the developed compound stimulus, the expression of collagen I mRNA and collagen III mRNA increased by 4.9 and 1.3 times respectively.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.195-196
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• 2005

We report the new design of a miniature electromagnetic actuator for probe-based data storage with anti-vibration mechanism. The actuator consists of a media substrate, silicon frame, 2 pairs of magnets, a spacer, and a printed circuit board (PCB). The total area of the device is $11.2{\times}11.2 mm^2$ while the data recording area is $7.4{\times}7.4 mm^2$. A net momentum fee structure was included for high vibration resistance. The simulation shows that the lateral vibration can be reduced to below 100 nm for 1 G acceleration if the counter mass is adjusted with $1\%$ difference. The peak power for ${\pm}50 {\mu}m$ displacement is below 50 mW for a actuator with a resonance at 200 Hz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.41-48
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• 2002

This paper presents a 18-mW, 2.5-㎓ fractional-N frequency synthesizer with l-bit $4^{th}$-order interpolative delta-sigma ($\Delta{\;}$\sum$)modulator to suppress fractional spurious tones while reducing in-band phase noise. A fractional-N frequency synthesizer with a quadruple prescaler has been designed and implemented in a $0.5-\mu\textrm{m}$ 15-GHz $f_t$ BiCMOS. Synthesizing 2.1 GHzwith less than 200 Hz resolution, it exhibits an in-band phase noise of less than -85 dBc/Hz at 1 KHz offset frequency with a reference spur of -85 dBc and no fractional spurs. The synthesizer also shows phase noise of -139 dBc/Hz at an offset frequency of 1.2 MHz from a 2.1GHz center frequency.

• Journal of radiological science and technology
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• v.37 no.2
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• pp.135-141
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• 2014

This study was evaluated the linearity and reproducibility according to dose, and reproducibility according to delay time by changing tube current amount (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively, which are low energy radiations) using Glass Dosimeter (GD) and piranha semiconductor dosimeter which are used for measuring exposure dose. Measurements of radiation dose were performed using external detector of piranha 657 which is multi-function QA device (RTI Electronic, Sweden). Conditions of measurement were 80 kVp, SSD 100 cm and exposure region is $10cm{\times}10cm$. Glass dosimeter was exposed to radiation. Twenty-four glass dosimeters were divided into six groups (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively), then measured. This study was resulted by measuring the linearity and reproducibility according to change of tube current in low energy field. In dose characteristic of GD, this study could be useful as previous study with regard to dose characteristic according to change of tube voltage in low energy field.