• 전기전자학회논문지
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• 제23권1호
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• pp.193-199
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• 2019

본 연구에서는 TCAD 시뮬레이션을 사용하여 산화갈륨 ($Ga_2O_3$) 기반 수직형 쇼트키 장벽 다이오드 고전압 스위칭 소자의 항복전압 특성을 개선하기 위한 가드링 구조를 이온 주입이 필요 없는 간단한 플로팅 금속 구조를 활용하여 제안하였다. 가드링 구조를 도입하여 양극 모서리에 집중되던 전계를 감소시켜 항복전압 성능 개선을 확인하였으며, 이때 금속 가드링의 폭과 간격 및 개수에 따른 항복전압 특성 분석을 전류-전압 특성과 내부 전계 및 포텐셜 분포를 함께 분석하여 최적화를 수행하였다. N형 전자 전송층의 도핑농도가 $5{\times}10^{16}cm^{-3}$이고 두께가 $5{\mu}m$인 구조에 대하여 $1.5{\mu}m$ 폭의 금속 가드링을 $0.2{\mu}m$로 5개 배치하였을 경우 항복전압 2000 V를 얻었으며 이는 가드링 없는 구조에서 얻은 940 V 대비 두 배 이상 향상된 결과이며 온저항 특성의 저하는 없는 것으로 확인되었다. 본 연구에서 활용한 플로팅 금속 가드링 구조는 추가적인 공정단계 없이 소자의 특성을 향상시킬 수 있는 매우 활용도가 높은 기술로 기대된다.

• 한국환경보건학회지
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• 제38권3호
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• pp.233-240
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• 2012

Objectives: The changes in atmospheric $PM_{2.5}$ concentrations were extensively studied in one metropolitan city (Incheon), two small and medium sized cities (Gunsan, Cheonan), and a rural area (Gosan in Jeju). The concentrations of heavy metals (Cr, Mn, Fe, Ni, Cu, Zn, Al, Pb) and the component features of $PM_{2.5}$ were determined for these areas. Methods: This study sampled $PM_{2.5}$ at the designated locations in the metropolitan (Incheon), small and medium sized cities (Gunsan in Jeonbuk and Cheonan in Chungnam), and rural area (Gosan in Jeju) to investigate concentrations with a sampling device (Sequential sampler, APM Eng., Korea). Sampling was undertaken over months, from June 26 to November 26, 2009. Sampling was conducted a total of 44 times, with routine sampling at intervals of six days (24 total times) and intensive sampling (20 total times) during the summer and fall. Mass concentration of $PM_{2.5}$ was evaluated and the concentrations of heavy metals (Cr, Mn, Fe, Ni, Cu, Zn, Al, Pb) were analyzed. Results: The geometric average of concentrations of $PM_{2.5}$ per district was $35.289{\mu}g/m^3$ for Cheonan, $29.955{\mu}g/m^3$ for Incheon, $24.119{\mu}g/m^3$ for Gunsan, and $18.773{\mu}g/m^3$ for Jeju, respectively. The average concentration of $PM_{2.5}$ in Cheonan was the highest. The seasonal concentration distributions per district showed Cheonan $33.387{\mu}g/m^3$, Incheon at $31.550{\mu}g/m^3$, Gunsan $22.900{\mu}g/m^3$, and Jeju $18.900{\mu}g/m^3$ in the summer. For the autumn, the concentrations were $36.873{\mu}g/m^3$ in Cheonan, $28.625{\mu}g/m^3$ in Incheon, $25.227{\mu}g/m^3$ in Gunsan, and $18.667{\mu}g/m^3$ in Jeju. According to the collected data, the concentration showed a tendency to rise during the autumn in all of these regions with the exception of Incheon. For heavy metal distribution per district, Fe showed an elevated concentration during the summer while high concentrations of Pb and Zn occurred during the autumn. Conclusion: These results demonstrated that atmospheric factors affected the concentrations of heavy metals. The results of this study could be used as foundational data for setting environmental air standards focusing on a $PM_{2.5}$ receptor.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1356-1364
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• 2014

A new conjugated copolymer, poly{4,8-bis(triisopropylsilylethynyl)benzo[1,2-b:4,5-b']dithiophene-alt-4,7- bis(5-thiophen-2-yl)-5,6-difluoro-2-(heptadecan-9-yl)-2H-benzo[d][1,2,3]triazole} (PTIPSBDT-DFDTBTz), is synthesized by Stille coupling polycondensation. The synthesized polymer has a band gap energy of 1.9 eV, and it absorbs light in the range 300-610 nm. The hole mobility of a solution-processed organic thin-film transistor fabricated using PTIPSBDT-DFDTBTz is $3.8{\times}10^{-3}cm^2V^{-1}s^{-1}$. Bulk heterojunction photovoltaic cells are fabricated, with a conventional device structure of ITO/PEDOT:PSS/polymer:$PC_{71}BM$/Ca/Al ($PC_{71}BM$ = [6,6]-phenyl-$C_{71}$-butyric acid methyl ester); the device shows a power conversion efficiency (PCE) of 2.86% with an open-circuit voltage ($V_{oc}$) of 0.85 V, a short-circuit current density ($J_{sc}$) of 7.60 mA $cm^{-2}$, and a fill factor (FF) of 0.44. Inverted photovoltaic cells with the structure ITO/ethoxylated polyethlyenimine/ polymer:$PC_{71}BM/MoO_3$/Ag are also fabricated; the device exhibits a maximum PCE of 2.92%, with a $V_{oc}$ of 0.89 V, a $J_{sc}$ of 6.81 mA $cm^{-2}$, and an FF of 0.48.

• 한국전자파학회논문지
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• 제14권5호
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• pp.536-541
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• 2003

본 논문에서는 다이아몬드 표면에의 산소흡착을 억제함으로써 양호한 전기적특성을 가지는 다이아몬드 MISFET를 제작하기 위해 초고진공 프로세스(ultrahigh vacuum process)에 의해 A1/Ca $F_2$/diamond MISFET를 제작하였다. 박막반도체 다이아몬드의 표면도전층으로서는 불소종단에 의해 형성되는 표면 도전층을 이용하였다. 초고진공 프로세스에 의해 제작된 A1/Ca $F_2$/diamond MISFET로부터 상용화된 실리콘 MOSFET와 동등한 레벨인~$10^{11}$ /$cm^2$ eV의 저농도의 표면준위밀도가 관측되었고, 유효이동도 $\mu$ $e_{ff}$ 는 이제까지 발표된 박막반도체 다이아몬드 FET중 최고치인 300 $cm^2$/Vs 이었다. 본 논문에서는 또한 초고진공 프로세스에 의해 제작된 Al/Ca $F_2$/diamond MISFET를 이용하여 인버터회로(inverter circuit)를 제작하였으며, 고온고주파 환경에서 양호한 전기적 특성을 관찰하였다. 본 논문의 특징은 초고진공 프로세스에 의해 제작된 불소화 다이아몬드 박막반도체 MISFET에 관한 최초의 보고이며, 또한 다이아몬드 박막반도체 MISFET의 인버터회로(inverter circuit)동작에 관한 최초의 보고이다.다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• Journal of Biosystems Engineering
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• 제35권6호
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• pp.387-392
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• 2010

This study was performed to design and to construct a digital soil cone index(CI) measuring device replacing conventional analog type devices. The device developed in the study consisted of a load cell, a rotary encoder and a motor with a decelerator as its main parts. The cone speed was controlled lower than 3.0 m/s which keeps the standard suggested by the ASABE S313.3 specification. The experiment was conducted in a soil bin system as well as in various fields. The CI data measured by the developed device were compared with those by an existing measurement device(SC900, Spectrum, USA). Based on the experiments at various field conditions, the CI measuring characteristic of the device was quite similar to that of the conventional device within a acceptable $R^2$ range of more than 0.5(mean=0.76). It was concluded that the digital cone index measuring device was an effective and comprehensive sensor for measuring soil strength.

• 한국농공학회지
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• 제21권3호
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• pp.121-126
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• 1979

The objective of this study was to grasp the condition of the distribution of water temperature in the warm water pool, and these observations were performed in Wudu warm water pool located at Wodu-Dong in Chuncheon. The results summarized in this study are as follows; 1. The horizontal distribution charts of water temperature at each depth of points were shown as Fig. 3, Fig. 4, and Fig. 5, respectively. In consequence of the observation, the condition of warm water was stagnant in the coner of warm water pool. As the result, it was found out that stagnant condition was the heaviest at water surface (depth; 0.05m), more heavier at middle depth (depth; 0.55m) and some heavy at bottom of the pool (depth; 1.10m). 2. The vertical water temperature change was shown as Fig. 6, and the mean water temperature of water surface (depth;0.05m) was higher about $2.2{\sim}3.3^{\circ}C$ than bottom water temperature. 3. Therefore, it was required to device such structures as form of broad cannels or overflow diversion weirs to mingle with top and bottom water.

• 마이크로전자및패키징학회지
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• 제10권2호
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• pp.33-37
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• 2003

Si 태양전지의 효율 개선을 위해 textured 표면을 갖는 에피텍셜 베이스 전지(TSEB)를 제작하고 이의 전기광학적 특성을 조사하였다. 제작된 전지는 AM-1 100 mW/$cm^2$ 입사광 아래에서 개방전압이 0.62 V로, 단락전류가 40 mA로, 충실도가 0.7, 전력변환 효율이 16%로 나타났다. 본 연구에서 제안된 전지는 $P^-/P^+$ 에피구조에 의한 광흡수 영역에서 캐리어의 드리프트 이동과 효과적 배면전계의 형성, 그리고 buried contact을 통한 낮은 직렬저항 등으로 인해 고효율 Si 태양전지의 제작에 적합한 구조로 판단된다.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.131-136
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• 2008

The transducer for multi-directionally movable ultrasonic motor having lambda shaped vibrators has been proposed and designed. The two branches cross at a right angle with each other at the tip. FEM analyses of lambda shaped transducer were carried out to find vibration modes for ultrasonic motor. The lambda shaped transducer has one symmetric mode and two anti-symmetric modes. The symmetric mode generates the normal direction motion of the tip. The lateral and vertical direction motion of the tip are excited by two anti-symmetric modes. The normal and lateral direction motions made an lateral elliptic trajectory. And the normal and vertical direction motions made an vertical elliptic trajectory normal to previous one. The transducer with 1 mm in thickness and 25 mm in length has been fabricated and evaluated. The resonance frequencies of the transducer was 32 kHz and 103 kHz. The tangential and vertical vibration displacement of the transducer having the lateral elliptic trajectory were $1.5{\mu}m\;and\;1.1{\mu}m$, respectively at the driving voltage of 100 Vpp and frequency of 32 kHz and 103 kHz. And the tangential and vertical vibration displacement of the transducer having the vertical elliptic trajectory were $0.4{\mu}m\;and\;0.2{\mu}m$, respectively at the same driving condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.514-516
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• 2003

We have fabricated an air stable blue emitting organic electroluminescent devices (OLEDs) with a carbazole based emitting molecule, Bis(3-N-ethylcarbazolyl)terephthalidene (BECP). Our device emits strong blue at 472 nm with the luminance efficiency of near 1 lm/W at a voltage and current density of 8 V and 5.7 mA/cm2, respectively, reaching the brightness up to 5000 cd/m2 at 270 mA/cm2. Finally, in order to tune the emission color from blue to green, we have used Bis(3-N-ethylcarbazolyl)cynoterephthalidene (BECCP), a derivative of BECP by adding cyno group in side chain, and compared the electroluminscence (EL) of OLEDS prepared by BECCP to that of BECP based OLEDs.