• Journal of the Korean Society of Marine Environment & Safety
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• v.16 no.4
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• pp.339-344
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• 2010

Oxygen depleted water mass can damage aquatic animals not only in direct way but also in indirect way by generating toxic substances including occurrence of hydrogen sulfide and ammonia which are also highly detrimental to animal life in the water mass. An oxygen dissolution device was developed, which makes turnover of the oxygen rich (over 20 mg/L) surface water down to the bottom where hypoxia is evident and tested the device in terms of oxygen recovery in the oxygen depleted bottom water. the device with turnover rates of $3.6\;m^2$/min at the liquid oxygen injection rate of 48~26.3 L/min could recover dissolved oxygen level to 7~25 mg/L at depth 7 m to lead to the dissolution level of over 90% by the supply of liquid oxygen. The running advantage of the device is that it does not require any auxiliary tank and higher energy for operation. Therefore, it can be highly useful device to relieve damages to the farmed animals in the oxygen depleted waters.

• New & Renewable Energy
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• v.5 no.3
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• pp.22-25
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• 2009

For increasing the output voltage, six SMD(surface mount device) type AlGaAs/GaAs solar cells were connected in series. The electrical properties of the array were measured and compared with one sun (100 mW/$cm^2$) and indoor light (480 lux) conditions. Under one sun condition, output power was 21.57 mW and it was $14.67\;{\mu}W$ under indoor light condition. Under the indoor light condition, the intensity of the light is very low compared to one sun condition. Thus the Voc(open circuit voltage) and Isc (short circuit current) of the sample under indoor light condition decreased very much compared to that of under the one sun condition. This kind of solar cell power supply can be used as a power source for ubiquitous sensor network (USN).

• Journal of the Korean Society for Precision Engineering
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• v.31 no.7
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• pp.577-583
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• 2014

In this study, we introduce how to apply "Information and Communication Technology (ICT) to injection molding system. We report the current state of IT technology applied to produce their products in micro lens injection molding system. And we explain key technology of ICT for injection molding system and how to implement. Especially, we also mention about an embedded controller, also called as "M2M device". It provides programmable intelligent functions, communication, various interfaces, amplifier functions and mobile device connection to our application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.148-151
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• 2017

This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.268-277
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• 1994

Current sensor using Hall device is an instrument of detecting a current by Hall effect. The existing current sensor is ordinarily worked by concentrating electromagnetism produced around the conducting wire turned iron core. The tiny curren, however, could not be accurately detected by the instrument owing to influence of residual magnetism exisisting in iron core, and the result of detecting is also somewhat on the large side. kAccordingly, We fabricated a new type of instrument minimizing the influence of residual magnetism existing in iron core and detected the tiny DC current accurately by taking advantage of magnetic modulation. The range of measuring DC current is 0[mA]-100[mA] and the maxiumm Linerity tolleance by the result of detecting current, can be reduced less than 3 percent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1121-1124
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• 2003

We report the photo (PL) and electro luminescence (EL) properties of new conjugated compounds based on imidazole moiety, 4,4' -di(4,5 diphenyl-N-imidazolyl)stilbene(DDPIS) and 4,4'-di(2,4,5-triphenyl-N-imidazolyl)stilbene(DTPIS), as emitting materials. ITO/m-MTDATA/NPB/DDPIS/Alq3/LiF/AI device shows blue EL spectrum at 456 ㎚ and 0.3 cd/ A and turn on voltage at 7 ∼ 8 V. DTPIS shows blue EL spectrum at around λmax=453㎚ and 0.5 cd/A efficiency in ITO/m-MTDATA/NPB/DTPIS/Alq3/LiF/Al device.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.182-185
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• 2002

A RE predistorted asymmetric Doherty amplifier for CDMA IS-95 signal has been fabricated using GaAs FETs. The Doherty amplifier used a Class AB main device and a Class C auxiliary device. At 6 ㏈ back-of from Pl ㏈ of 34 ㏈m, PAE of 27% was measured. This Doherty amplifier has higher PAE than Class AB for over 20 dB range of pout power. A RF predistortion linearizer is applied to the Doherty amplifier to improve the IMD cancellation performance. The 3rd order IMD cancellation of 12.2 ㏈ was achieved at output power of 18 ㏈m.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1578-1580
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• 2002

The breakdown and on-state characteristics of the multi-RESURF SOI LDMOSFET is presented. P-/n-epi layer thickness and doping concentration is varied from $2{\mu}m{\sim}5{\mu}m$ and $1{\times}10^{15}/cm^3{\sim}9{\times}10^{15}/cm^3$ to obtain optimum breakdown voltage and on-resistance. The breakdown and on-state characteristics of the device is verified by two-dimensional process simulator ATHENA and device simulator ATLAS.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.743-751
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• 1991

This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5$[\times}6{\mu}m^{2}$emitter area was measured with 63$\Omega$and 28fF, respectively. The minimum propagation delay time shows 121ps at 0.7mW from the measurement of 31 stage ring oscillator.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.55-58
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• 2014

The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.