• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of Biosystems Engineering
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• v.27 no.1
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• pp.25-32
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• 2002

This study was conducted to develop a dry paddy seeder of strip tillage. The prototype is 8 rows drill seeder, which is composed of a strip tillage, sowing and fertilizing device, and pressing wheels to do the strip tillage, sowing, fertilizing, and draining ditch, simultaneously. The performances of prototype was evaluated through the investigation of fuel consumption, tillage torque, ratio of soil breaking, and economical efficiency and the results were compared with these of a dry paddy seeder that needs whole tillage. According to the USDA textural classification, the experiment field was composed of sandy loam which consisted of 56.8 of sand, 30.2 of silt and 13.0 % of clay, respectively. Its hardness ranged from 952 to 1,673 kPa depending on the soil depth, and its soil moisture content was 24.9%(d. b.) Fuel consumption of the prototype was 5,015g/hr at 2,000 rpm of engine, which was consequently 64% smaller than that of the conventional dry paddy seeder. For the tillage torque, it ranged from 132 to 206N$.$m depending on the tillage pitch, which was 10∼30% smaller than that of the conventional dry paddy seeder. The ratio of soil braking of the prototype was 87∼98%, whereas that of the conventional dry paddy seeder was 80∼97%. The working performance of the prototype was surveyed to be 3.8hours/ha, which was about 5 times higher than that of the conventional dry paddy seeder. The cost reduction of 26.3% was obtained by using the prototype.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• Korean Journal of Remote Sensing
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• v.18 no.1
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• pp.53-59
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• 2002

The MSC is a payload on the KOMPSAT-2 satellite to perform the earth remote sensing. The instrument images the earth using a push-broom motion with a swath width of 15 km and a GSD(Ground Sample Distance) of 1 m over the entire FOV(Field Of View) at altitude 685 km. The instrument is designed to haute an on-orbit operation duty cycle of 20% over the mission lifetime of 3 years with the functions of programmable gain/offset and on-board image data compression/storage. The MSC instrument has one channel for panchromatic imaging and four channel for multi-spectral imaging covering the spectral range from 450nm to 900nm using TDI(Time Belayed Integration) CCD(Charge Coupled Device) FPA(Focal Plane Assembly). The MSC hardware consists of three subsystem, EOS(Electro Optic camera Subsystem), PMU(Payload Management Unit) and PDTS(Payload Data Transmission Subsystem) and each subsystems are currently under development and will be integrated and verified through functional and space environment tests. Final verified MSC will be delivered to spacecraft bus for AIT(Assembly, Integration and Test) and then COMSAT-2 satellite will be launched after verification process through IST(Integrated Satellite Test). In this paper, the introduction of MSC, the configuration of MSC electronics including electrical interlace and design of CEU(Camera Electronic Unit) in EOS are described. MSC Operation parameters induced from the operation concept are discussed and analyzed to find the influence of system for on-orbit operation in future.

• Journal of Radiation Protection and Research
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• v.47 no.3
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• pp.134-142
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• 2022

Background: This study investigated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps in the kV energy ranges. Materials and Methods: The experimental group consisted of InLight nanoDots, whose deep electron/hole traps were fully filled with 5 kGy pre-irradiation (OSLD_exp), whereas the non-pre-irradiated OSLDs were arranged as a control group (OSLD_cont). Absorbed doses for 75, 80, 85, 90, 95, 100, and 105 kVp with 200 mA and 40 ms were measured and defined as the unit doses for each energy value. A bleaching device equipped with a 520-nm long-pass filter was used, and the strong beam mode was used to read out signal counts. The characteristics were investigated in terms of fading, dose sensitivities according to the accumulated doses, and dose linearity. Results and Discussion: In OSLD_exp, the average normalized counts (sensitivities) were 12.7%, 14.0%, 15.0%, 10.2%, 18.0%, 17.9%, and 17.3% higher compared with those in OSLD_cont for 75, 80, 90, 95, 100, and 105 kVp, respectively. The dose accumulation and bleaching time did not significantly alter the sensitivity, regardless of the filling of deep traps for all radiation qualities. Both OSLD_exp and OSLD_cont exhibited good linearity, by showing coefficients determination (R²) > 0.99. The OSL sensitivities can be increased by filling of deep electron/hole traps in the energy ranges between 75 and 105 kVp, and they exhibited no significant variations according to the bleaching time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• Journal of the Korean Society of Physical Medicine
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• v.19 no.2
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• pp.55-64
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• 2024

PURPOSE: This study evaluated the effects of robot-assisted gait training combined with virtual reality training on balance and gait ability in stroke patients. METHODS: Thirty-one stroke patients were allocated randomly into one of two groups: robot-assisted gait training combined virtual reality training group (RGVR group; n = 16) and control group (n = 15). The RGVR group received 30 minutes of robot-assisted gait training combined with virtual reality training. Robot-assisted gait training was conducted in parallel using a virtual reality device. In the Control group, neurodevelopmental therapy was performed according to the function of chronic stroke patients. Both groups underwent training for 30 minutes, three times per week for eight weeks. The balance assessment system (BioRescue, Marseille, France), BBS, and TUG were used to evaluate the balance ability. The OptoGait (Microgate Srl, Bolzano, Italy) and 10 mWT were measured to evaluate the gait ability. The measurements were performed before and after the eight-week intervention period. RESULTS: Both groups showed significant improvement in their balance and gait ability during the intervention. RGVR showed significant differences in balance and gait ability compared to the control group groups (p < .05). These results showed that RGVR was more effective on balance and gait ability in patients with chronic stroke. CONCLUSION: RGVR can improve balance and gait ability, highlighting the benefits of RGVR. This study provides intervention data for recovering the balance and gait ability of chronic stroke patients.

• The Korean Journal of Nuclear Medicine Technology
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• v.15 no.2
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• pp.41-46
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• 2011

Purpose: The result of exam using an imaging device is very closely related with the image quality. Moreover, this image quality can be changed according to the condition of image acquisition and evaluation method. In this study, we evaluated the image quality according to the difference of pre-set method in PET/CT image. Materials & Methods: PET/CT Discovery STe16 (GE Healthcare, Milwaukee, USA), Chest PET phantom (Experiment 1) and 94 NEMA phantom (Experiment 2) were used. Phantom were filled with $^{18}F$-FDG maintaining hot sphere and background ratio to 4:1. In the case of experiment 1, we set the radio activity concentration on 3.5, 6.0, 8.6 kBq/mL. In the case of experiment 2, we set the radio activity concentration on 3.3, 5.5, 7.7, 9.9, 12.1, 16.5 kBq/mL. All experiments were performed with the time-set method for 2 minutes 30 seconds per frame and the count-set method with one hundred million counts in 3D mode after CT transmission scan. For the evaluation of the image quality, we compared each results by using the NECR and SNR. Results: In the experiment 1, both the NECR and SNR were increased as radioactivity concentration getting increased. The NECR was shown as 53.7, 66.9, 91.4. and SNR was shown as 7.9, 10.0, 11.7. Both the NECR and SNR were increased in time-set method. But the count-set method's pattern was not similar with the time-set method. The NECR was shown as 53.8, 69.1, 97.8, and SNR was shown as 14.1, 14.7 14.4. The SNR was not increased in count-set method. In experiment 2, results of both the NECR and SNR were shown as 45.1, 70.6, 95.3, 115.6, 134.6, 162.2 and 7.1, 8.8, 10.6, 11.5, 12.7, 14.0. These results were shown similar patten with the experiment 1. Moreover, when the count-set method was applied, the NECR was shown as 42.1, 67.3, 92.1, 112.2, 130.7, 158.7, and SNR was shown as 15.2, 15.9, 15.6, 15.4, 15.5, 14.9. The NECR was increased but SNR was not shown same pattern. Conclusion: Increment of administered radioactivity improves the quality of image unconcerned with the pre-set method. However, NECR was not influenced by increment of total acquisition counts through simple increasing scan duration without increment of administered activity. In case of count-set method, the SNR was shown similar value despite of increment of radioactivity. So, the administered activity is more important than the scan duration. And we have to consider that evaluation of image quality using only SNR may not be appropriate.

• Radiation Oncology Journal
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• v.17 no.1
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• pp.78-83
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• 1999

Purpose : We have compared the characteristics of Siemens virtual wedge device with physical wedges for clinical application. Materials and Methods : We investigated the characteristics of virtual and physical wedges for various wedge angles (15, 30, 45, and 60$^{\circ}$) using 6- and 15MV photon beams. Wedge factors were measured in water using an ion chamber for various field sizes and depths. In case of virtual wedge device, as upper jaw moves during irradiation, wedge angles were estimated by accumulated doses. These measurements were performed at off-axis points perpendicular to the beam central axis in water for a 15cm${\times}$20cm radiation field size at the depth of loom. Surface doses without and with virtual or physical wedges were measured using a parallel plate ion chamber at surface. Field size was 15cm H20cm and a polystyrene phantom was used. Results : For various field sizes, virtual and physical wedge factors were changed by maximum 2.1% and 3.9%) , respectively. For various depths, virtual and physical wedge factors were changed by maximum 1.9% and 2.9%, respectively. No major difference was found between the virtual and physical wedge angles and the difference was within 0.5$^{\circ}$ . Suface dose with physical wedge was reduced by maximum 20% (x-ray beam :6 MV, wedge angle:45$^{\circ}$, 550: 80 cm) relative to one with virtual wedge or without wedge. Conclusions : Comparison of the characteristics of Siemens virtual wedge device with physical wedges was performed. Depth dependence of virtual wedge factor was smaller than that of physical wedge factor. Virtual and physical wedge factors were nearly independent of field sizes. The accuracy of virtual and physical wedge angles was excellent. Surface dose was found to be reduced using physical wedge.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.327-332
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• 2011

Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.