• Title/Summary/Keyword: M2M Device

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Edge-Centric Metamorphic IoT Device Platform for Efficient On-Demand Hardware Replacement in Large-Scale IoT Applications (대규모 IoT 응용에 효과적인 주문형 하드웨어의 재구성을 위한 엣지 기반 변성적 IoT 디바이스 플랫폼)

  • Moon, Hyeongyun;Park, Daejin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.12
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    • pp.1688-1696
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    • 2020
  • The paradigm of Internet-of-things(IoT) systems is changing from a cloud-based system to an edge-based system to solve delays caused by network congestion, server overload and security issues due to data transmission. However, edge-based IoT systems have fatal weaknesses such as lack of performance and flexibility due to various limitations. To improve performance, application-specific hardware can be implemented in the edge device, but performance cannot be improved except for specific applications due to a fixed function. This paper introduces a edge-centric metamorphic IoT(mIoT) platform that can use a variety of hardware through on-demand partial reconfiguration despite the limited hardware resources of the edge device, so we can increase the performance and flexibility of the edge device. According to the experimental results, the edge-centric mIoT platform that executes the reconfiguration algorithm at the edge was able to reduce the number of server accesses by up to 82.2% compared to previous studies in which the reconfiguration algorithm was executed on the server.

Smart Centralized Remote Security Service Provisioning Framework for Open ICT Environment (개방형 ICT 환경을 위한 집중식 원격 보안 서비스 프로비저닝 프레임워크 구성 방안)

  • Park, Namje
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.6 no.2
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    • pp.81-88
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    • 2016
  • Machine-to-Machine (M2M) communication provides each component (machine) with access to Internet, evolving into the IoT technology. IoT is a trend where numbers of devices provide the communication service, using the Internet protocol. As spreading the concept of IoT(Internet of Things), various objects become home information sources. According to the wide spread of various devices, it is difficult to access data on the devices with unified manners. Under this environment, security is a critical element to create various types of application and service. In this paper propose the inter-device authentication and Centralized Remote Security Provisioning framework in Open M2M environment. The results of previous studies in this task is carried out by protecting it with the latest information on M2M / IoT and designed to provide the ultimate goal of future M2M / IoT optimized platform that can be integrated M2M / IoT service security and security model presents the information.

Implementation of ICT-based Underwater Communication Monitoring Device for Underwater Lifting (수중구조를 위한 ICT 기반 수중통신 모니터링 장치 구현)

  • Yoon, Jong-Hwa;Kang, Sang-iL;Yoon, Dal-Hwan
    • Journal of IKEEE
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    • v.26 no.3
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    • pp.396-400
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    • 2022
  • In this study, an ICT-based underwater communication monitoring device for underwater structures is implemented based on lifting fixture that transport human bodies found on the seabed to sea level. The lifting fixture is packaged with a retback, sideback, and cartridge that injects air. Monitoring systems are developed in a mobile manner in a portable structure. The underwater ultrasonic sensor signal is supplied using a USB port, and the O/S consists of Linux. For the underwater communication dong test, a measurement test was conducted in real time from 6m to 40m in depth on the east coast. The ultrasonic sound sensor is converted to 2,400 bps to verify the transmission error according to the duality. The communication speed of sensor to monitoring is 115,200 bps, and the speed of communication from controller to receiver is 2,400 bps. In the commercialization stage of the lifting device, it is easy to develop a low-end type and the compatibility is wide.

Carbon and Silver Electrode Properties of Power Electroluminescent Device (후막 전계 발광 소자의 Carbon과 Silver 전극 특성)

  • Lee, Jong-Chan;Sung, Hyun-Ho;Cho, Whang-Sin;Park, Yong-Kyu;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.26-30
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    • 2000
  • In this paper, carbon and silver electrode properties of power electroluminescent device were investigated. Devices were manufactured by screen-printing and manufactured devices were measured following things with variable applied voltage; emission spectra, transferred charge density, brightness and current. A continuous test at $65 ^{\circ}C$ of temperature and 95% of humidity was operated. The brightness of devices which were made of silver and carbon electrode at 100V was $67.03cd/m^2$ and $60.02cd/m^2$ respectively. In case of device, which was made of silver electrode, a black spot was formed after 72 hours and degraded but carbon electrode was stable.

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Design of A/D Converter for CMOS Image Sensor (CMOS 이미지 센서를 위한 A/D 변환기의 설계)

  • Paek, K.K.;Ju, B.K.;Shin, K.S.;Lee, Y.S.;Kim, K.S.;Lee, Y.H.;O, M.H.
    • Proceedings of the KIEE Conference
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    • 1999.11c
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    • pp.706-708
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    • 1999
  • In recent years, analog to digital converter is significant component in high frame rate system. But, in the future. as long as minimum line width is reduced, matching between speed and resolution may be worse. In this paper, first-order $\Sigma-\Delta$ analog to digital converter is adopted and designed as its solutions. Hspice simulation is performed, using $0.65{\mu}m$ CMOS 2-poly 2-metal model parameter.

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A Study on HEMT Device Process, Part III: Fabrication of a discrete Device and its Characteristics (HEMT 소자 공정연구, Part III : 개별소자 제작 및 특성분석)

  • 이종람;이재진;맹성재;박성호;마동훈;강태원;김진섭;마동성
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.11
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    • pp.1706-1711
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    • 1989
  • Unit processes for the fabrication of HEMT(high electron mobility transistor)was studied and the optimum conditions of them were applied to the fabrifcation of a discrete HEMT device. The HEMT with a nominal gate-source spacing of 3.6\ulcorner and a gate length of 2.8\ulcorner showed a transconductance of 46.1mS/mm and a threshold voltage of -0.29V. A source-drain voltage of 2.0V for a saturation current of 35mA/mm was achieved.

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Thermal Improvements for 2.75 GHz-FBAR Devices

  • Mai, Linh;Lee, Jae-Young;Pham, Van-Su;Kabir, S. M. Humayun;Dong, Hoai-Bac;Yoon, Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.196-199
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    • 2007
  • In this paper, we studied a ZnO-based film bulk acoustic wave resonator (FBAR) device fabricated on top of a novel multi-layered Bragg reflector with chromium adhesion layers $(0.03{\mu}m-thick)$ inserted. The performance of FBAR device could be significantly improved using proper thermal treatments. At ${\sim}2.75$ GHz, we could achieve good return loss and quality factor (Q). This device fabrication technique will be useful for the future mobile WiMAX applications.

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Characteristics of matrix OEL devices that fabricated by side-by-side methode (side by side 방법으로 제작한 matrix 유기 발광 소자의 발광특성)

  • Son, Chul-Ho;Yeo, Cheol-Ho;Shin, Kyung;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.366-369
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    • 2001
  • In this study, the matrix Organic Electroluminescence (OEL) device, that was consisted of R,G,B pixels. We fabricated OEL devices by side by side methode and, used organic material Alq3 as green, DCM as red and Butyl PBD as blue ETL. We investigated the characteristic of brightness and current density for matrix OEL device. As the results, each color devices has minimum about $100cd/m^{2}$ brightness and maximum luminescence was $2500cd/m^2$ in green OEL device.

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Long-lifetime Green Phosphorescent OLEDs for Low Power Displays

  • Weaver, Michael S.;Adamovich, Vadim I.;Xia, Sean C.;Fiordeliso, James J.;Kwong, Raymond C.;Brown, Julie J.;Lee, Kwan-Hee;Lim, Choon-Woo;Kim, Sung-Chul
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.38-41
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    • 2009
  • We demonstrate a new commercial green phosphorescent organic light emitting device (OLED) in a bottom emission device and top emission microcavity. The bottom and top emitting phosphorescent OLEDs (PHOLED$^{TM}$s) had luminance efficiencies of 60cd/A and 137cd/A respectively, at a luminance of 1,000cd/$m^2$. The top emission microcavity was close to 1953 NTSC color requirements with 1931 CIE color coordinates of 0.231, 0.718. A record green PHOLED lifetime of >3,500hrs to LT95 from 4000cd/$m^2$ is demonstrated for the microcavity device.

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