• Journal of Information Display
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• 제9권3호
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• pp.23-27
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• 2008

This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

• Journal of the Semiconductor & Display Technology
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• 제7권3호
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• pp.5-9
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• 2008

New devices with structure of ITO/2TNATA/NPB/TCTA/CBP:7%Ir(ppy)$_3$/BCP/ETL/LiF/Al were proposed to develop high luminous green phosphorescent organic light emitting diodes and their electroluminescent properties were evaluated. The experimental devices were divided into two kinds according to the material ($Alq_3$ or SFC137) used as an electron transport layer (ETL). Luminous intensities of the devices using $Alq_3$ and SFC137 as electron transport layers were 27,500 cd/$m^2$ and 51,500 cd/$m^2$ at an applied voltage of 9V, respectively. The current efficiencies of both devices were similar as 12.6 cd/A under a luminance of 10,000 cd/$m^2$, while showed slower decay in the device with SFC137 as an ETL according to the further increase of luminance. Current density and luminance of the device with SFC137 as an electron transport layer were higher at the same voltage than those of the device with $Alq_3$ as an ETL.

• Advances in nano research
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• 제10권1호
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• pp.91-99
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• 2021

Silicene is an emerging two-dimensional (2D) semiconductor material which has been envisaged to be compatible with conventional silicon technology. This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. The simulations are carried out by employing nearest neighbour tight-binding approach and top-of-the-barrier ballistic nanotransistor model. Further investigations on the effects of the operating temperature and oxide thickness to the device performance metrics of AlSi3 FET are also discussed. The simulation results demonstrate that the proposed AlSi3 FET can achieve on-to-off current ratio up to the order of seven and subthreshold swing of 67.6 mV/dec within the ballistic performance limit at room temperature. The simulation results of AlSi3 FET are benchmarked with FETs based on other competitive 2D materials such as silicene, graphene, phosphorene and molybdenum disulphide.

• The Journal of Korean Institute of Communications and Information Sciences
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• 제37B권12호
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• pp.1119-1127
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• 2012

The one of features of M2M communications, which are recently attracted attention as a future business of mobile communications, is that there is a large number of devices compared with traditional communication services. Hence, the control signal that are generated by the M2M devices may cause a significant congestion in the network and in order to solve this problem, a standardization is progressing for reducing the redundant signaling by managing M2M devices as a group in 3GPP standardization. In this paper, we propose a method of group based mobility management by managing M2M devices that have the same mobility as a group. In the proposed method, M2M devices that have the same mobility are grouped by the Mobility Management Entity (MME) and the MME elects a group header among the M2M devices in the group. Then, the group header performs the Tracking Area Update (TAU) on behalf of the group members to reduce the signaling overhead of mobility management. With the proposed method, we can achieve 80% decrease of the signaling overhead of mobility management compared with the case where each M2M device individually performs its TAU procedure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.613-616
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• 2001

The effect of codopants on the electroluminescent properties for SrS-Ce based thin films was studied. The active layer was deposited by electron beam with sulfur The wavelength of eletroluminecence shifted with codopants and their concentrations. The intensity ratio of blue to green were found In the CeP-doped device, but the highest total intensity of luminance showed about 850cd/$m^2$ in the CeCl$_3$+KCL-doped device, which indicates that codopants are playing an important role of luminance. At any device, the luminance was the strongest at 0.2 mol% concentration among the concentration studied, suggesting the existence of optimum concentration. By post-annealing Luminance of most devices was improved, but the shift of wavelength was not observed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.272-276
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• 2004

Great strides in organic light emitting device (OLED) technology have resulted in a number of commercial products. To continue this growth into large area displays, for example televisions, an understanding of the mechanisms that drive the OLED device efficiency and lifetime performance is critical. In this work, we consider maximizing the efficiency lifetime product based on phosphorescent OLED ($PHOLED^{TM}$) technology. We report green PHOLEDs with luminous efficiency of 82 cd/A, 5.7 V and 10,000 hours lifetime at 1,000 cd/$m^2$,red PHOLEDs with CIE of (0.67,0.33), 11 cd/A and 35,000 hours lifetime at 500 cd/$m^2$ and recent progress in blue demonstrating efficiencies of 18 cd/A at 200 cd/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.439-442
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• 2008

A mixed host structure of TCTA and TPBI was used in orange emitting layer and host composition was critical to device performances of PHWOLEDs. PHWOLEDs with TPBI host in orange emitting layer showed high quantum efficiency of 10.3 % at $1000\;cd/m^2$ with little change of CIE coordinates of (0.32, 0.34) from $100\;cd/m^2$ to $10,000\;cd/m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.901-902
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• 2003

Three-color organic light-emitting diodes (OLEDs) of metal-semiconductor-metal (MSM) structure have been favricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as hole injection layer(HIL). The mMTDATA is shown to be an effective hole injecting material, in that the insertion of mMTDATA greatly reduces the roughness of anode surface and improves the device performance. Red, green and blue OLEDs were fabricated, and their color coordinates in CIE chromaticity were found to be (0.600, 0.389), (0.240, 0.525), and (0.171, 0.171), respectively. The luminous efficiencies of the fabricated OLEDs were 1.4 lm/W at 106 $cd/m^{2}$ for red, 1.4 lm/W at 100 $cd/m^{2}$ for green, and 2.0 lm/W at 104 $cd/m^{2}$ for blue.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.612-615
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• 2004

We present an extremely high efficient red organic light-emitting diodes (OLEDs) using a fluorescent dye 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped into an emitting region which consists of multiple pairs of a doped and an undoped layer. An emitting region of OLEDs composes of a tris-(8-hydroxyquinolinato) aluminum (Alq3) codoped with rubrene of 5% wt. or a mixture of Alq3 and rubrene (1:1). The luminance yield of the codoped device and the mixed device are 6.5 cd/A and 9.2 cd/A at 10 mA/$cm^2$, respectively. We have considerably improved the luminance yields of red OLEDs as much as ${\sim}$90% at 10 mA/$cm^2$ compared with that of the device doped with only DCJTB. We attribute it to both the emitting assist dopant (rubrene) and the dotted-line doping structure in an emitting region of OLED.

• Journal of Advanced Marine Engineering and Technology
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• 제23권2호
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.