• The Journal of the Korea Contents Association
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• v.7 no.11
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• pp.76-83
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• 2007

In the sequentially rotated array antennas, the characteristics of antenna gain, axial ratio and cross polarization have been analyzed with a varying of sequential array constant(number of array element, figure of rotation) respectively. Where the antenna element of array is a probe feeding, LHCP truncated microstrip antenna whose resonant frequency is in 11.85GHz. The simulation results of 23 SRA antennas((M=2, 3, 4, 6, 8), $(1\leqP\leqM)$) has shown as follows. The widest 3dB bandwidth of axial ratio appears at P=2 which is in-dependant of M, the highest antenna gain appears when a sequential array constant has a pair of (2, 1), (3, 2), (4, 1), (6, 3), (8, 1) respectively. Specially, all of the SRA antenna appear very poor characteristics in case of M=P. Therefore the SRA antenna has to be designed as selecting a optimal sequential array constant among a lot of simulation data.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.162-166
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• 1990

Photoinduced anisotropy (PIA) in amorphous As2S3 (a-As2S3 ) thin film, deposited by vacuum evaporation, is investigated. PIA is induced by linearly polarized Ar+ laser beam (λ=514.5nm) and probed by weak Ar+ laser (λ=514.5nm) and He-Ne laser (λ=632.8nm) beam through the crossed analyzer. Keeping pump beam intensity constantly, rotation of pump beam polarization direction induces reorientation phenomina of anisotropic axis. Introducing directional factor into simplified 3-level system, which is used to analyze photodarkening phenomina, an analytical expression of PIA is derived. Temporal behavior of PIAand its reorientation phenomina are investigated andcompared with theory. In the experiment pump beam intensity is 100mW/$\textrm{cm}^2$ and thickness of a-As2S3 thin film is 3${\mu}{\textrm}{m}$. In those condition, time constant of photoinduced anisotropy obtained by method of least square curve fitting is 4.0$\times$10-2sec-1. The time constant of PIA we obtained is larger than that of photodarkening, 2.8$\times$10-2sec-1.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.287-294
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• 1996

An optical phase modulator is fabricated in GaAs/AlGaAs doble heterostructure wafer grown by MOCVD. A self-aligned process, in which the same photoresist pattern is used for both the waveguide etching and the insulation layer formation, is developed and is found to be very useful, Fabry-Perot interference technique is applied to the measurement and the phase modulation efficiency is measured to be 22.5$^{\circ}$/Vmm at 1.31 ${\mu}{\textrm}{m}$ for TE polarization.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.569-574
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• 2002

Recently, thick PZT films are required for the cases of micro piezoelectric devices with high driving force, high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated by Sol-Gel multi-coating method. Microstructures, and electrical properties of films were investigated by XRD, FESEM, impedance analyzer, and P-E hysteresis. PZT films with 2.7$mu extrm{m}$ to 4.4${\mu}{\textrm}{m}$ thickness were fabricated. Dielectric constant, loss, remnant polarization and coercive field of them were 880~1650 at 1kHz, 2~3% at 1kHz, 26~32 $\mu$C/$ extrm{cm}^2$, and 33~60kV/cm, respectively. Also a transverse piezoelectric coefficient $(e_{31,f})$ measurement system was fabricated and tested for thick film samples.

• Journal of Electrochemical Science and Technology
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• v.9 no.4
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• pp.260-275
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• 2018

The corrosion inhibition of cast iron in 1 M HCl by Phenanthroline (Phen) was investigated using potentiodynamic polarization (PDP) curves, electrochemical impedance spectroscopy (EIS), surface analysis and theoretical calculations. It is found that Phen exhibits high inhibition activity towards the corrosive action of HCl and its adsorption obeys the Langmuir adsorption isotherm model. The results showed that inhibition efficiency increases with Phen concentration up to a maximum value of 96% at 1.4 mM, and decreases slightly with the increase in temperature. The free adsorption energy value indicates that Phen adsorbs on cast iron surface in 1 M HCl via a simultaneous physisorption and chemisorption mechanism. Scanning electron microscopy (SEM) micrographs, atomic force microscopy (AFM) and FTIR analysis confirmed the formation of a protective film on cast iron surface, resulting in the improvement of its corrosion resistance in the studied aggressive solution. Quantum chemical calculations at the DFT level were achieved to correlate electronic structure parameters of Phen molecules with their adsorption mode.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.3
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• pp.80-87
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• 1997

As a result of experimenting the temperature characteristics of origination voltage in Al/$AL_1,O_3/PI (nL)/Au, the sample of polyimide LB film and AI/$AL_1,O_3/Cls TCNQ(lOL)/Al, the difference of work function is found between upper and lower electrodes. If polyimide LB film is accumulated with Z type or becomes imide, the polarization of the film is not made. And AI/$AL_2,O_3/C-{15}TCNQ( IOL)/ AI which is the CI5 TCNQ LB film sample doesn't show the difference of work function because it has the same upper and lower electrode and the polarization is found on the film. As a result of experiment with MIM element of LB ultra thin film, Direct current more than hun¬dreds of m V is generated and it can be used for industrial power resources in the area of electricity, electronics and information communication.

• Journal of the Korean Society of Marine Environment & Safety
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• v.19 no.3
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• pp.285-289
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• 2013

The coastal area of Republic of Korea is very clean compared to other countries. In this reason, west coastal area of our country is a good place for breeding up a fish such as shrimp. In winter season, the heating system is required for preventing shrimp death caused by freezing in the farm. The heater in the heating system for fishery's farm is operated very severe combating corrosion due to high accumulation by feeding material and high temperature in heated sea water. Almost all manufactured heaters of STS 316L and Ti material are scrapped every year due to heavy corrosion such a general and crevice corrosion. For comparing the general and galvanic corrosion in new heater material, the test material of Zirconium (Zr), Titanium (Ti) and STS 316L are tested by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), current density-time methods and microscopic examination in a 3.5% NaCl solution. The corrosion potential (Ecor) measured by potentiodynamic polarization for Zr, Ti and STS 316L reveals -198, -250 and -450mV, corrosion current density 0.5, 2.5 and $6.5{\mu}A/cm^2$ respectively. The film resistance measured by EIS are Zr 63,000, Ti 39,700 and 316L $3,150{\Omega}$, and the current of Zr-Ti couple is $0.03{\mu}A$, whereas Zr-316L SS is $0.1{\mu}A$. According to the result of this experiment in 3.5% NaCl solution, Zr is excellent corrosion resistance material than Ti and STS 316L.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.7
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• pp.1359-1366
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• 2007

The recent, a large capacity of communication is required in order to it is in proportion to capacity of information communication increase and to satisfy a demand because of the demand about Internet, a multimedia service of Video of internet protocol(VoIP), Audio/Video steaming. DWDM(Dense Wavelength Division Multiplexing) technique has been emerged as the method of solving it without additional optical fiber network building and hish-speed equipment. Therefore this thesis proposed the optical filter of fiber/multilayer slab coupled structure combining it to multilayer slab waveguide by polishing the cladding of one side of fiber to design the optical filter having these functions. The optical filter proposed as the simulation result satisfies DWDM filter characteristic; 1) when the separation distance between fiber and slab is $4.15{\mu}m$ at the communication window of $1.5{\mu}m$, the polarization independence is 65nm, 2) when the center wavelengths about TM mode and TE mode are each ${\lambda}_0=1.54946\;{\mu}m$ and ${\lambda}_0=1.6144\;{\mu}m$ and, FWHM(Full at Half Maximun) is 0.1nm.

• Journal of the Optical Society of Korea
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• v.19 no.4
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• pp.376-381
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• 2015

Transmission characteristics of long-period fiber gratings (LPFGs) fabricated by periodically etching a conventional single-mode fiber (SMF) are investigated. After coating the SMF with photoresist, the cladding of the SMF is symmetrically and periodically removed by using a wet etching technique resulting in the formation of the LPFG. Tensile strain reinforces the coupling strength between the core and the cladding mode based on the photoelastic effect. The extinction ratio of the SMF-based LPFG at a wavelength of 1550.8 nm is measured to be -15.1 dB when the applied strain is $600{\mu}{\varepsilon}$. The ascent of ambient index shifts the resonant wavelength to shorter wavelength because of the increase of the effective refractive index of the cladding mode. The extinction ratio is diminished by increase in the ambient index because of the induction of the optical attenuation of the cladding mode. The transmission characteristics of the proposed LPFG with variations in torsion are also measured. The photoelastic effect based on torsion changes the extinction ratio and the resonant wavelength of the proposed SMF-based LPFG. The polarization-dependent loss of the LPFG is also increased by torsion because of the torsion-induced birefringence. The polarization-dependent loss of the LPFG at torsion of 8.5 rad/m is measured to be 3.9 dB.