• Title/Summary/Keyword: M.I.V

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Intercomparison Test of 500 kV Standard Measuring System for SI Voltage (500 kV 표준급 개폐충격전압 측정시스템의 비교시험)

  • Kim, M.K.;Huh, D.H.;Kim, I.S.
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1492-1493
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    • 2007
  • This paper represents the development of national standard(NS) for switching impulse(SI) voltage measuring system rated 500 kV. A traceability of the NS to the international standard could be achieved by the intercomparison test with PTB(Physikalisch-Technische Bundesansalt). According to the IEC 60060-2, a measurement uncertainty was assessed. As a result of the tests, the measurement uncertainty and the characteristics of step response were satisfied with the requisite for NS.

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Synthesis and Structure of the Layered Cathode Material $Li[Li_xMn_{1-x-y}Cr_y]O_2$ for Rechargeable Lithium Batteries (리튬2차전지용 양극 소재 $Li[Li_xMn_{1-x-y}Cr_y]O_2$의 합성 및 층상구조 연구)

  • 최진범;박종완;이승원
    • Journal of the Mineralogical Society of Korea
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    • v.16 no.3
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    • pp.223-232
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    • 2003
  • The co-precipitation method is applied to synthesize the cathode material Li[L $i_{x}$M $n_{1-x-y}$C $r_{y}$ ] $O_2$ for lithium rechargeable batteries at $650^{\circ}C$ (CR650) and 8$50^{\circ}C$ (CR850), respectively. Rietveld indices indicate that $R_{wp}$ with respect to $R_{exp}$ ( $R_{wp}$/ $R_{exp}$) are 9.2%/10.1% for CR650 and 15.9%/9.76% for CR850, respectively. $R_{B}$ and S (GofF) shows 10.9%, 8.54% and 1.9, 1.6, respectively. Rietveld structure refinement reveals that layer structure of LiMn $O_2$ (R3m) coexists with lower symmetry of Li[L $i_{1}$3/M $n_{2}$3/] $O_2$ (C2/c) due to superlattice ordering of Li and Mn in metal-transition containing layers. Unit-cell parameters are calculated as a=2.8520(2)$\AA$, c=14.248(2)$\AA$, V=100.40(l)$\AA^3$ for CR650, and a=2.8504(1)$\AA$, c=14.2371(7)$\AA$, V=100.179(8)$\AA^3$ for CR850. Final chemistry is obtained as Li[L $i_{0.35}$M $n_{0.56}$C $r_{0.09}$] $O_2$ (CR650) and Li[L $i_{0.27}$M $n_{0.61}$C $r_{0.13}$] $O_2$ (CR850), respectively.y...y..vely.y...y..

FCXO ; A Fuzzy Compensated Crystal Oscillator

  • de los Mozos, Mario Reyesr;Valderrama, Elena;Arguelles, Javier
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 1993.06a
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    • pp.842-844
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    • 1993
  • We present a F.L.C. (Fuzzy Logic Controller) to control of the oscillation frequency of a V.C.X.O. (Voltage Controled Crystal Oscillator). This F.C.X.O. maintains stable its oscillation frequency inside a range of 1 ppm (one part per millon), with temperature between -55$^{\circ}C$ to+75$^{\circ}C$.

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Multi-Output LLC Series Resonant Converter (다 출력 LLC 직렬 공진 컨버터)

  • Kang, S.I.;Kim, J.H.;KIm, E.S.;Park, J.H.;Lee, H.K.;Huh, D.Y.
    • Proceedings of the KIPE Conference
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    • 2008.10a
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    • pp.29-32
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    • 2008
  • 최근 PDP Display 시장은 해를 거듭 할수록 가격 경쟁이 치열해 지고 있다. 그에 따라 PSU(Power Supply Unit) 모듈의 저 가격화 및 경량화가 요구되고 있고, 요구조건을 만족하기 위해 여러 출력을 하나로 통합화 하는 다 출력 구조의 변압기가 적용되고 있다. 본 논문에서는 서스테인 전원부($V_s$)와 어드레스 전원부($V_a$), 그리고 Multi 18V전원부($V_m$)를 하나의 변압기에 일체화 하였다. 그리고 어드레스 전원부($V_a$)와 Multi 18V전원부($V_m$)의 부하 추가에 따라 서스테인 전원부($V_s$)의 전압 이득 특성 및 공진특성 변화를 확인하였다. 또한 다 출력 LLC 직렬공진 컨버터 설계 시 고려사항과 동작 특성으로 42인치 HD PDP 전원에 적용하여 검증한 결과에 대하여 서술 하였다.

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Fabrication and Characterization of the Silicon Vertical Hall Devices (실리콘 종형 홀 소자의 제조 및 그 특성)

  • 류지구;최세곤
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.3
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    • pp.72-78
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    • 1992
  • The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P$^{+}$ isolation dam has been increased up to 1.2 times compared to that of device without the dam. With the condition of V$_{r}$=-5.0[V], B=0.4[T] and I$_{sup}$=1.0[mA], the Hall voltage and sensitivity of the device with P$^{+}$ isolation dam were about 29[mV] and 74[V/AT], respectively. These vertical Hall devices can be used as the adjustable magnetic fields sensor.

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Study on Material Discrimination by Atomic Number Using Dual Energy ${\gamma}$-Rays

  • Gil, Y.M.;Lee, Y.S.;Lee, H.S.;Cho, M.H.;Namkung, W.
    • Proceedings of the Korean Nuclear Society Conference
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    • 2005.10a
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    • pp.769-770
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    • 2005
  • This study aims to demonstrate the practical value of radioscopic differentiation of materials. The dual energy method is proposed for identifying materials according to atomic numbers. The differentiation of materials is achieved by comparing the attenuation ratio of low and high energy photons. We used gamma-rays of 0.662 MeV and 1.25 MeV and NaI(Tl) scintillation detector with a Multi-channel Analyzer (MCA). We also carried out the Monte Carlo simulation for the case of bremsstrahlung radiation from dual electron beams of 4 MeV and 9 MeV.

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AFORS HET Simulation for Optimization of High Efficiency HIT Solar Cell (고효율 HIT Solar Cell 제작을 위한 AFORS HET 시뮬레이션 실험)

  • Cho, Soo-Hyun;Heo, Jong-Kyu;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.450-451
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    • 2008
  • Amorphous silicon Solar cell has n-i-p structure in general, and each layer's thickness and doping concentration are very important factors which are as influential on efficiency of salar cell. Using AFORS HET simulation to get the high efficiency, by adjusting n layer's thickness and doping concentration, p layer's doping concentration. The optimized values are a-Si:H(n)'s thickness of 1nm, a-Si:H(n)r's doping concentration of $2\times10^{20}cm^{-3}$, a-Si:H(p+)r's doping concentration of $1\times10^{19}cm^{-3}$. After optimization, the solar cell shows $V_{oc}$=679.5mV, $J_{sc}$=39.02mA/$cm^2$, FF=83.71%, and a high Efficiency=22.21%. Though this study, we can use this study for planning or manufacturing solar cell which has high efficiency.

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Studies on the Production of Gibberellic acid (지베렐린 생산에 관한 연구)

  • 이영선;손형진;김익환;민태익
    • Microbiology and Biotechnology Letters
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    • v.11 no.3
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    • pp.217-222
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    • 1983
  • By the treatment of Gibberella fujkuroi I-892 with mutagen such as UV light and N-methyl-N'-nitro-N-nitrosoguanidine, a mutant G. fujkuroi G-471 was selected as the highest producer of gibberellic acid among 800 mutant strains. It showed 30% increase of production yield compared with that of the parent strain. At optimum medium composition (saccharose 1.0%, ammonium tartarate 50mM, malt extract 1.0% KH$_2$PO$_4$ 0.5%, MgSO$_4$0.5%, FeSO$_4$0.0002%, trace element sol.0.002% (v/v), the yield of submerged culture increased by 30% after 7 days culture at 24$^{\circ}C$ (253mg/$\ell$). In submerged culture, the initial pH showed much effects on the increase of gibberellic acid production. The highest yield of the production was attained with pH adjustment to 4.0 at the initial stage of fermention.

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