• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1414-1417
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• 1996

The purpose of this study Is to research and develop $V_{6}O_{13}$ composite cathode for lithium thin film battery. $V_{6}O_{13}$ represents a class of cathode active material used in Li rechargeable batteries. In this study, we investigated cyclic voltammetry and charge/discharge characteristics of $V_6O_{13}$/SPE/Li cells. Cyclic voltammogram of $V_{6}O_{13}$/SPE/Li cell at scan rate 1mV/sec showed reduction peaks of 2.25V and 2.4V and oxidation peaks of 2.4V and 2.2V. The discharge curve of $V_{6}O_{13}$/SPE/Li cell showed 4 potential plateaus. The discharge capacity was decreased in the beginning of charge/discharge cycling. After 8th cycling, the discharge capacity was stable. The discharge capacity of 1st cycle and 15th cycle was 290mAh/g and 147mAh/g at $25^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.410-414
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• 2001

The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.147-151
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• 1993

PECVD에 의해 Burried gate 비정질 실리콘 박막트랜지스터를 제작하여 포화 전압 대 전류 특성에 대하여 새로운 해석을 하였고 해석 결과는 실험적으로 증명되었다. 본 연구의 결과 실험된 전달특성과 출력특성을 모델화 하였는데 이 모델식은 I$_{D}$와 V$_{G}$의 실험결과에서 얻어지는 3가지 함수를 기본으로 모델화 되었다. 포화 드레인 전류는 V$_{G}$가 증가할수록 증가되었고 디바이스의 포화는 드레인 전압이 커질수록 증가되었으며 문턱전압은 감소됨을 보였다.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.251-254
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• 1999

In this paper V-I(Voltage to Current) converter using the series composite transistor is presented. Due to the series composite transistor employs operating in the saturation region and triode region, the proposed circuit has wide input range at low voltage. The designed V-I converter has simulated by HSPICE using 0.6${\mu}{\textrm}{m}$ n-well CMOS process with a $\pm$2.5V supply voltage. Simulation results show that the THD can be 0.81% at 4 $V_{p-p}$ differential input voltage when frequency of input signal is 10MHz.z.

• Archives of Pharmacal Research
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• v.11 no.2
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• pp.87-92
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• 1988

A number of substituted furodiketochroman derivatives ($lll_{a-f}$) have been synthesized by fusion of aromatic aldehydes with 5-hydroxybergapten and 5-hydroxyisopimpinellin. On the other hand, when the reaction was carried out in a solvent, the corresponding bis-furoccumarin derivatives ($lV_{c-n}$) were obtained. The anticoagulant effect of compounds $lll_{a,b,d}$ and $lv_{b,c,f,g,i,k}$ was tested. They failed to demonstrate any significant effect. The effect of the tested compounds on the arterial blood pressure was studied. Compounds $lV_c$, $lll_d$, $lll_b$, $lV_b$, $lV_k$ and $lV_i$ showed lowering effects on the normal systolic blooc pressure of anaesthetized rats in a decreasing manner.

• Journal of Sensor Science and Technology
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• v.12 no.4
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• pp.149-155
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• 2003

A PMOSFET photodetector for highly-sensitive active pixel sensor(APS) is presented. This sensor uses 5V power supply and has been designed and fabricated using I-poly and 2-metal $1.5{\mu}m$ CMOS technology. The feature of a PMOSFET photodetector is that the polysilicon gate of the PMOSFET was connected to n-well, in order to increase the photo sensitivity. The designed MOS photodetector has similar $I_{DS}-V_{DS}$ characteristics with a standard MOSFET. One dimensional image sensor with 16 pixels based on the PMOSFET photodetector has also been designed and fabricated. Unit pixel of the designed sensor consists of a PMOSFET photodetector and 4 NMOSFETs. Unit pixel area is $86{\mu}m{\times}90.5{\mu}m$ and its fill factor is about 12%.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.3
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• pp.430-436
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• 2019

Objective: This study identified angiotensin I-converting enzyme (ACE) inhibitory peptides in beef M. longissimus injected with thermolysin (80 ppm) and stored for 3 days at $5^{\circ}C$. Methods: Crude peptides (molecular weight <3 kDa) were obtained from the thermolysin hydrolysate and separated into seven fractions. Fraction V showing the highest ACE inhibitory activity was further fractionated, yielding subfractions V-15, V-m1, and V-m2, and selected for superior ACE inhibitory activity. Finally, twelve peptides were identified from the three peak fractions and the ACE inhibitory activity ($IC_{50}$) of each peptide was evaluated. Results: The Leu-Ser-Trp, Phe-Gly-Tyr, and Tyr-Arg-Gln peptides exhibited the strongest ACE inhibitory activity ($IC_{50}$ values of 0.89, 2.69, and 3.09 mM, respectively) and had higher concentrations (6.63, 10.60, and 29.91 pg/g; p<0.05) relative to the other peptides tested. Conclusion: These results suggest that the thermolysin injection process is beneficial to the generation of bioactive peptides with strong ACE inhibitory activity.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.9
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• pp.1941-1948
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• 1997

In this paper, the power efficient linear upconversion mixer which is a functional circuit in transmit path of intermediate frequency(IF) part of Code Division Multiple (CDMA) cellular phone was explained. In generally, the low CMOS devices limits the implementation of upconversion mixer especially for lower loads. Using replica transconductor, the linear range is extended up to the limit. Thiscircuit was imprlemented using $0.8{\mu}\textrm{m}$ N-well CMOS technology with 2-poly/2-metal. The active area of chip is $0.53mm{\times}0.92mm$. The power consumption is 30mW with 3.3V suply voltage. The 1dB conpression characteristics is -27.3dB with $25{\Omega}$. load and being applied by 2-tone input signal. The mixer operates properly above 200MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.89-93
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• 2007

This paper presents the design and the implementation of input/output (I/O) interface circuits for 2.5 Gbps operation in a 3.3V 0.35um CMOS technology. Due to the differential transmission technique and low voltage swing, LVDS(low-voltage differential signaling) has been widely used for high speed transmission with low power consumption. This interface circuit is fully compatible with the LVDS standard. The LVDS proposed in this paper utilizes a telescopic amplifier. This circuit is operated up to 2.3 Gbps. The circuit has a power consumption of 25. 5mW. This circuit is designed with Samsung $0.35{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.63-67
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• 1998

The synthesis and characterization of the monomeric group 13 heterocyclic thiosemicarbazone complexes $Me_2M[SC_4H_3CHNNC(S)SCH_3]$ (M=Al (2), Ga (3)) are described. Compounds 2-3 were prepared using $MMe_3$ (M=Al, Ga) in toluene with 2-thiophenecarboxaldehyde-S-methyldithiocarbazat e under anaerobic conditions. These complexes have been characterized by $^1H\;NMR,\; ^{13}C\; NMR$, elemental analyses, and single-crystal X-ray diffraction. 2 crystallizes in the monoclinic space group $P2_1/c$ with unit cell parameters a=10.2930(5) Å, b=18.564 (1) Å, c=7.3812(6) Å, V=1347.9(2) Å3, $D_{calc}=1.342\; gcm^{-3}$ for Z=4, 9281 reflections with $I_o<3{\sigma}\;(I_o),$ R1=0.0500 and wR2=0.0526. 3 crystalizes in the orthorhombic space group $P_{bca}$ with unit cell parameters a=13.340(3) Å, b=19.9070(5) Å, c=11.3690(2) Å, $V=2673.88(9)\;{\AA}^3$, $D_{calc}=1.511\; gcm^{-3}$ for Z=8, 17004 reflections with $I_o>3{\sigma}\;(I_o),$, R1=0.0480 and wR2=0.0524. Compound 3 is a monomeric gallium compound with a weak interaction between the pendant thiophene and the gallium center.